电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SBFP420B

产品描述UHF to C Band Low Noise Amplifier, Oscillation Applications
产品类别分立半导体    晶体管   
文件大小59KB,共15页
制造商SANYO
官网地址http://www.semic.sanyo.co.jp/english/index-e.html
下载文档 详细参数 全文预览

SBFP420B概述

UHF to C Band Low Noise Amplifier, Oscillation Applications

SBFP420B规格参数

参数名称属性值
是否Rohs认证不符合
包装说明CHIP CARRIER, R-XBCC-N4
针数4
Reach Compliance Codeunknow
ECCN代码EAR99
最大集电极电流 (IC)0.035 A
基于收集器的最大容量0.27 pF
集电极-发射极最大电压4.5 V
配置SINGLE
最小直流电流增益 (hFE)50
最高频带C BAND
JESD-30 代码R-XBCC-N4
JESD-609代码e0
元件数量1
端子数量4
最高工作温度150 °C
封装主体材料UNSPECIFIED
封装形状RECTANGULAR
封装形式CHIP CARRIER
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型NPN
最大功率耗散 (Abs)0.1 W
认证状态Not Qualified
表面贴装YES
端子面层Tin/Lead (Sn/Pb)
端子形式NO LEAD
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)25000 MHz
Base Number Matches1

文档预览

下载PDF文档
Ordering number : ENN7434
SBFP420B
NPN Epitaxial Planar Silicon Transistor
SBFP420B
UHF to C Band Low Noise Amplifier,
Oscillation Applications
Features
Package Dimensions
Low noise : NF=1.1dB typ (f=1.8GHz).
unit : mm
High cut-off frequency : fT=20GHz typ (VCE=1V).
2214
: fT=25GHz typ (VCE=3V).
Low voltage operation.
Bottom View
High Gain :
S21e
2
=17dB typ (f=1.8GHz).
0.35
0.2
Ultrasmall (1006 size), thin (0.5mm) leadless package.
0.05
0.25
[SBFP420B]
Side View
3
0.05
4
0.65
0.4
0.25
0.05
2
1
0.05
0.5
Top View
0.6
0.15
0.15
Side View
4
Marking
1
3
1.0
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
1 : Base
2 : Emitter
3 : Collector
4 : Emitter
SANYO : ECSP1006-4
Ratings
15
4.5
1.5
35
100
150
--55 to +150
Unit
V
V
V
mA
mW
°C
°C
2
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Reverse Transfer Capacitance
Symbol
ICBO
IEBO
hFE
fT1
fT2
Cre
VCB=5V, IE=0
VEB=1.5V, IC=0
VCE=4V, IC=20mA
VCE=1V, IC=10mA
VCE=3V, IC=30mA
VCB=1V, f=1MHz
50
20
18
25
0.17
0.27
Conditions
Ratings
min
typ
max
200
35
150
GHz
GHz
pF
Unit
nA
µA
Marking : AD
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62503 TS IM TA-100131 No.7434-1/15

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2772  80  681  593  651  56  2  14  12  43 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved