PD - 94428
AUTOMOTIVE MOSFET
Typical Applications
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IRF2805S
IRF2805L
HEXFET
®
Power MOSFET
D
Climate Control
ABS
Electronic Braking
Windshield Wipers
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Features
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V
DSS
= 55V
G
S
R
DS(on)
= 4.7mΩ
I
D
= 135AV
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this product are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety
of other applications.
D
2
Pak
IRF2805S
TO-262
IRF2805L
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(6 sigma)
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Q
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyR
Single Pulse Avalanche Energy Tested ValueX
Avalanche CurrentQ
Repetitive Avalanche EnergyW
Peak Diode Recovery dv/dt
S
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
135V
96V
700
200
1.3
± 20
380
1220
See Fig.12a, 12b, 15, 16
2.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
(PCB Mounted, steady state)**
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
HEXFET(R) is a registered trademark of International Rectifier.
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1
06/10/02
IRF2805S/IRF2805L
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
U
Min.
55
–––
–––
2.0
91
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.06
3.9
–––
–––
–––
–––
–––
–––
150
38
52
14
120
68
110
4.5
7.5
5110
1190
210
6470
860
1600
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
4.7
mΩ V
GS
= 10V, I
D
= 104A
T
4.0
V
V
DS
= 10V, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 104A
20
V
DS
= 55V, V
GS
= 0V
µA
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
200
V
GS
= 20V
nA
-200
V
GS
= -20V
230
I
D
= 104A
57
nC V
DS
= 44V
78
V
GS
= 10VT
–––
V
DD
= 28V
–––
I
D
= 104A
ns
–––
R
G
= 2.5Ω
–––
V
GS
= 10V
T
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
V
GS
= 0V
–––
pF V
DS
= 25V
–––
ƒ = 1.0MHz, See Fig. 5
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 44V
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Q
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
R
Starting T
J
= 25°C, L = 0.08mH
R
G
= 25Ω, I
AS
= 104A. (See Figure 12).
S
I
SD
≤
104A, di/dt
≤
240A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
T
Pulse width
≤
400µs; duty cycle
≤
2%.
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Q
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 175V
showing the
A
G
integral reverse
––– ––– 700
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 104A, V
GS
= 0VT
––– 80 120
ns
T
J
= 25°C, I
F
= 104A
––– 290 430
nC di/dt = 100A/µs
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
U
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
V
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
W
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
X
This value determined from sample failure population. 100%
tested to this value in production.
2
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IRF2805S/IRF2805L
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
ID , Drain-to-Source Current (A)
100
4.5V
ID , Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
4.5V
10
20µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
10
0.1
1
20µs PULSE WIDTH
Tj = 175°C
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
T J = 25°C
I
D
= 175A
A)
2.5
ID , Drain-to-Source Current
T J = 175°C
R
DS(on)
, Drain-to-Source On Resistance
2.0
100
(Normalized)
1.5
1.0
10
4.0
5.0
6.0
VDS = 25V
20µs PULSE WIDTH
7.0
8.0
9.0
10.0
0.5
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= 10V
100 120 140 160
180
VGS , Gate-to-Source Voltage (V)
T
J
, Junction Temperature
(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF2805S/IRF2805L
10000
VGS = 0V,
f = 1 MHZ
C iss
= C gs + C gd , C ds
SHORTED
Crss
Coss
= C
gd
=C + C
ds
gd
20
ID = 104A
VGS , Gate-to-Source Voltage (V)
VDS = 44V
VDS= 28V
8000
16
C, Capacitance (pF)
6000
12
Ciss
4000
8
2000
4
Coss
0
1
10
Crss
100
0
0
40
80
120
160
200
240
Q G Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
10000
OPERATION IN THIS AREA
LIMITED BY RDS (on)
ISD, Reverse Drain Current (A)
T J = 175°C
100.0
ID , Drain-to-Source Current (A)
1000
10.0
100
100µsec
1msec
1.0
T J = 25°C
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
10msec
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VGS = 0V
1.4
1.6
1.8
1
100
1000
VSD, Source-toDrain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF2805S/IRF2805L
140
LIMITED BY PACKAGE
120
V
DS
V
GS
R
G
R
D
D.U.T.
+
I
D
, Drain Current (A)
100
80
60
40
20
0
25
50
75
100
125
150
175
-
V
DD
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
T
C
, Case Temperature ( °C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
0.01
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
P
DM
t
1
t
2
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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