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13PD75-TO

产品描述PIN Photodiode, TO-46, 3 PIN
产品类别光电子/LED    光电   
文件大小91KB,共3页
制造商ANADIGICS
官网地址http://www.anadigics.com
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13PD75-TO概述

PIN Photodiode, TO-46, 3 PIN

13PD75-TO规格参数

参数名称属性值
包装说明TO-46, 3 PIN
Reach Compliance Codeunknown
Is SamacsysN
配置SINGLE
最大暗电源2 nA
安装特点THROUGH HOLE MOUNT
功能数量1
最高工作温度85 °C
最低工作温度-40 °C
光电设备类型PIN PHOTODIODE
最长响应时间5e-10 s
最小反向击穿电压30 V
最大反向电压30 V
半导体材料InGaAs
形状ROUND
尺寸0.075 mm
表面贴装NO
Base Number Matches1

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High Speed InGaAs p-i-n Photodiode
13PD75-TO
Sheet 1 of 3
The 13PD75-TO, an InGaAs photodiode with a 75µm-diameter photosensitive region packaged in a TO-46
header, is intended for high speed and low noise applications. The diameter of the photosensitive region is
sufficiently small to enable operation at low dark current and low capacitance and yet large enough to allow
efficient coupling to multi-mode fiber. Planar semiconductor design and dielectric passivation provide very
low noise performance. Reliability is assured by hermetic sealing and 100% purge burn-in (200°C, 15
hours, Vr = 20V). Headers are available with either a lensed or flat window cap. Chips can also be attached
and wire bonded to customer-supplied or other specified packages.
Features:
• Planar Structure
• Dielectric Passivation
• 100% Purge Burn-in
• High Responsivity
DEVICE CHARACTERISTICS
Parameters
Operating Voltage
Dark Current
Capacitance
Responsivity
Rise/Fall
Frequency Response
Test Conditions
–5V
–5V
1300nm
(–3dB)
Minimum
Typical
0.2
0.7
0.9
1.5
Maximum
–20
2
0.9
0.5
Units
Volts
nA
pF
A/W
ns
GHz
0.8
ABSOLUTE MAXIMUM RATINGS
Reverse Voltage
Forward Current
Reverse Current
Operating Temperature
Storage Temperature
Soldering Temperature
30 Volts
10mA
5mA
–40°C to +85°C
–40°C to +85°C
250°C
Sheet 1 of 3
829 Flynn Road, Camarillo, CA 93012 • Phone: (805) 445-4500 • Fax: (805) 445-4502
Email: customerservice@telcomdevices.com • Website: www.telcomdevices.com

 
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