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22DGQ045DPBF

产品描述Rectifier Diode, Schottky, 1 Phase, 2 Element, 26A, 45V V(RRM), Silicon, HERMETIC SEALED PACKAGE-3
产品类别分立半导体    二极管   
文件大小298KB,共6页
制造商International Rectifier ( Infineon )
官网地址http://www.irf.com/
标准
下载文档 详细参数 选型对比 全文预览

22DGQ045DPBF概述

Rectifier Diode, Schottky, 1 Phase, 2 Element, 26A, 45V V(RRM), Silicon, HERMETIC SEALED PACKAGE-3

22DGQ045DPBF规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称International Rectifier ( Infineon )
包装说明R-MSFM-W3
针数3
Reach Compliance Codecompliant
ECCN代码EAR99
应用GENERAL PURPOSE
外壳连接ANODE AND CATHODE
配置SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.82 V
JESD-30 代码R-MSFM-W3
最大非重复峰值正向电流300 A
元件数量2
相数1
端子数量3
最高工作温度150 °C
最大输出电流26 A
封装主体材料METAL
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)260
认证状态Not Qualified
最大重复峰值反向电压45 V
最大反向电流5000 µA
表面贴装NO
技术SCHOTTKY
端子形式WIRE
端子位置SINGLE
处于峰值回流温度下的最长时间40
Base Number Matches1

文档预览

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PD-97555C
22DGQ045
JANS1N6660DT1
JANTX1N6660DT1
JANTXV1N6660DT1
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
Major Ratings and Characteristics
 
Characteristics 
I
F(AV)
V
RRM
(Per Leg)
I
FSM
@ tp = 8.3ms half–sine (Per Leg)
V
F
@ 20Apk, T
J
= 125°C (Per Leg)
T
J
, T
stg
Operating and storage
1N6660DT1 Units 
30
45
300
0.70
-65 to 150
A
V
A
V
°C
30 Amp. 45V
Ref: MIL-PRF– 19500/608
Description/Features
The 1N6660DT1 Doubler Schottky rectifier has been
expressly designed to meet the rigorous requirements of IR
HiRel environments. It is packaged in the hermetic isolated
TO-254AA package. The device's forward voltage
drop and reverse leakage current are optimized for the
lowest power loss and the highest circuit efficiency for typical
high frequency switching power supplies and resonant
power converters. Full MIL-PRF-19500 quality conformance
testing is available on source control drawings to TX,
TXV and S quality levels.
Hermetically Sealed
Center Tap
High Frequency Operation
Guard Ring for Enhanced Ruggedness and
Long term Reliability
Electrically Isolated
ESD Rating: Class 3A per MIL-STD-750,
Method 1020
CASE STYLE
3.78 [.149]
3.53 [.139]
A
13.84 [.545]
13.59 [.535]
0.12 [.005]
6.60 [.260]
6.32 [.249]
1.27 [.050]
1.02 [.040]
17.40 [.685]
16.89 [.665]
1
2
3
20.32 [.800]
20.07 [.790]
13.84 [.545]
13.59 [.535]
B
C
14.48 [.570]
12.95 [.510]
0.84 [.033]
MAX.
3X
3.81 [.150]
2X
NOTES:
1.14 [.045]
0.89 [.035]
0.36 [.014]
B A
3.81 [.150]
1.
2.
3.
4.
DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
CONTROLLING DIMENSION: INCH.
CONFORMS TO JEDEC OUTLINE TO-254AA.
 
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
Case Outline and Dimensions - TO-254AA
1
2016-09-21

22DGQ045DPBF相似产品对比

22DGQ045DPBF 22DGQ045 JANTX22DGQ045 22DGQ045UPBF JANTXV22DGQ045 22DGQ045U 22DGQ045D JANS22DGQ045
描述 Rectifier Diode, Schottky, 1 Phase, 2 Element, 26A, 45V V(RRM), Silicon, HERMETIC SEALED PACKAGE-3 25 A, 45 V, SILICON, RECTIFIER DIODE, TO-254AA Rectifier Diode, Schottky, 1 Phase, 2 Element, 25A, 45V V(RRM), Silicon, TO-254AA Rectifier Diode, Schottky, 1 Phase, 2 Element, 26A, 45V V(RRM), Silicon, HERMETIC SEALED PACKAGE-3 Rectifier Diode, Schottky, 1 Phase, 2 Element, 25A, 45V V(RRM), Silicon, TO-254AA Rectifier Diode, Schottky, 1 Phase, 2 Element, 26A, 45V V(RRM), Silicon, HERMETIC SEALED PACKAGE-3 Rectifier Diode, Schottky, 1 Phase, 2 Element, 26A, 45V V(RRM), Silicon, HERMETIC SEALED PACKAGE-3 Rectifier Diode, Schottky, 1 Phase, 2 Element, 25A, 45V V(RRM), Silicon, TO-254AA
是否无铅 不含铅 含铅 含铅 不含铅 含铅 含铅 含铅 含铅
厂商名称 International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
包装说明 R-MSFM-W3 S-MSFM-P3 S-XSFM-P3 R-MSFM-W3 S-XSFM-P3 R-MSFM-W3 R-MSFM-W3 S-XSFM-P3
Reach Compliance Code compliant unknown compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
应用 GENERAL PURPOSE EFFICIENCY GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
外壳连接 ANODE AND CATHODE ISOLATED ISOLATED ANODE AND CATHODE ISOLATED ANODE AND CATHODE ANODE AND CATHODE ISOLATED
配置 SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 R-MSFM-W3 S-MSFM-P3 S-XSFM-P3 R-MSFM-W3 S-XSFM-P3 R-MSFM-W3 R-MSFM-W3 S-XSFM-P3
最大非重复峰值正向电流 300 A 300 A 300 A 300 A 300 A 300 A 300 A 300 A
元件数量 2 2 2 2 2 2 2 2
相数 1 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3 3
最大输出电流 26 A 25 A 25 A 26 A 25 A 26 A 26 A 25 A
封装主体材料 METAL METAL UNSPECIFIED METAL UNSPECIFIED METAL METAL UNSPECIFIED
封装形状 RECTANGULAR SQUARE SQUARE RECTANGULAR SQUARE RECTANGULAR RECTANGULAR SQUARE
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) 260 NOT SPECIFIED NOT SPECIFIED 260 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 45 V 45 V 45 V 45 V 45 V 45 V 45 V 45 V
表面贴装 NO NO NO NO NO NO NO NO
技术 SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
端子形式 WIRE PIN/PEG PIN/PEG WIRE PIN/PEG WIRE WIRE PIN/PEG
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 40 NOT SPECIFIED NOT SPECIFIED 40 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1 1 1 1 1 1
是否Rohs认证 符合 - 不符合 符合 不符合 不符合 不符合 不符合
最高工作温度 150 °C - 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
JESD-609代码 - - e0 - e0 e0 e0 e0
端子面层 - - TIN LEAD - TIN LEAD Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) TIN LEAD

 
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