High Performance InGaAs p-i-n Photodiode
‘FC’ Active Device Mount
13PD300-FC
The 13PD300-FC, an InGaAs photodiode with a 300µm-diameter photosensitive region
packaged in a TO-46 header and aligned in an FC active device mount, is designed for
applications in both moderate-bit-rate fiberoptic communications and high sensitivity
measurement equipment. This device is one of the most versatile of the
Telcom Devices’ family of optoelectronic components. Planar semiconductor design and
dielectric passivation provide superior performance. Reliability is assured by hermetic sealing
and a 100% purge burn-in ( 200
o
C, 15 hours, V
r
= 20V ).
Features
Planar Structure
Dielectric Passivation
100% Purge Burn-In
High Responsivity
Device Characteristics:
Parameters
Test Conditions
-
-5V
-5V
1300nm
-
(-3dB)
-
-
Min
-
1.0
4
0.7
-
-
Typ
-
Max
-20
Units
Volts
Operating Voltage
Dark Current
Capacitance
Responsivity
Rise/Fall
Frequency Response
Reverse Voltage
Forward Current
Reverse Current
Operating Temperature
Storage Temperature
Soldering Temperature
10 nA
12
pF
0.9
-
-
0.5
300
-
A/W
ns
MHz
Absolute Maximum Ratings
30 Volts
25 mA
5 mA
-40
o
C to + 85
o
C
-40
o
C to + 85
o
C
250
o
C
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