MWI 35-12 A5
IGBT Modules
Sixpack
I
C25
= 45 A
= 1200 V
V
CES
V
CE(sat) typ.
= 2.2 V
Short Circuit SOA Capability
Square RBSOA
W1
I 10
K10
A10
B10
R10
S10
F3
K3
P3
E10
F10
A1
M10
N10
V10
W10
E 72873
Preliminary data
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C80
I
CM
t
SC
(SCSOA)
RBSOA
P
tot
T
J
T
stg
V
ISOL
Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 20 kΩ
Continuous
Transient
T
C
= 25°C
T
C
= 80°C
T
C
= 80°C, t
P
= 1 ms
V
GE
= ±15 V, V
CE
= V
CES
, T
J
= 125°C
R
G
= 39
Ω,
non repetitive
V
GE
= ±15 V, T
J
= 125°C, R
G
= 39
Ω
Clamped inductive load, L = 100
µH
T
C
= 25°C
Maximum Ratings
1200
1200
±20
±30
45
30
60
10
I
CM
= 60
V
CEK
< V
CES
200
150
-40 ... +150
V
V
V
V
A
A
A
µs
A
W
°C
°C
V~
V~
Nm
lb.in.
mm
mm
m/s
2
g
oz.
Features
NPT IGBT technology
low saturation voltage
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with DCB ceramic base plate
isolation voltage 4800 V
UL registered E72873
q
q
q
q
q
q
q
q
q
q
q
q
q
Advantages
q
q
q
space and weight savings
reduced protection circuits
package designed for wave soldering
50/60 Hz, RMS
t = 1 min
I
ISOL
≤
1 mA
t=1s
Insulating material: Al
2
O
3
Mounting torque (M5)
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
Typical
4000
4800
2.0 - 2.5
18 - 22
9
9
50
80
2.8
Typical Applications
q
q
q
M
d
d
S
d
A
a
Weight
AC motor control
AC servo and robot drives
power supplies
Data according to a single IGBT/FRED unless otherwise stated.
©1998 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
842
MWI 35-12 A5
Symbol
Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ. max.
1200
4.5
T
J
= 25°C
T
J
= 125°C
2
6.5
V
V
Dimensions in mm (1 mm = 0.0394")
V
(BR)CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
R
thJC
R
thJS
V
GE
= 0 V
I
C
= 1 mA, V
CE
= V
GE
V
CE
= V
CES
V
CE
= 0 V, V
GE
=
±20
V
I
C
= 25 A, V
GE
= 15 V
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
1.2 mA
mA
±200
nA
V
pF
pF
pF
ns
ns
ns
ns
mJ
mJ
0.6 K/W
K/W
2.2
1650
250
110
100
2.7
Inductive load, T
J
= 125°C
°
I
C
= 25 A, V
GE
= ±15 V
V
CE
= 600 V, R
G
= 39
Ω
70
500
70
3.8
2.8
with heatsink compound
1.2
Reverse Diode (FRED)
Characteristic Values
min.
typ.
2.4
1.9
max.
2.6
2.3
50
30
20
200
2.6
V
V
A
A
A
ns
1.3 K/W
K/W
Equivalent Circuits for Simulation
Conduction
V
F
I
F
I
RM
t
rr
R
thJC
R
thJS
I
F
= 25 A, V
GE
= 0 V
I
F
= 25 A, V
GE
= 0 V, T
J
= 125°C
T
C
= 25°C
T
C
= 80°C
I
F
= 25 A, V
GE
= 0 V, -di
F
/dt = 400 A/µs
T
J
= 125°C, V
R
= 600 V
with heatsink compound
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 1.5 V; R
0
= 40.7 m
Ω
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 1.3 V; R
0
= 24.9 m
Ω
Thermal Response
IGBT (typ.)
C
th1
= 0.07 J/K; R
th1
= 0.586 K/W
C
th2
= 0.18 J/K; R
th2
= 0.014 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.05 J/K; R
th1
= 1.313 K/W
C
th2
= 0.09 J/K; R
th2
= 0.025 K/W
©1998 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
842
MWI 35-12 A5
60
T
J
= 25°C
V
GE
=17V
15V
13V
11V
60
T
J
= 125°C
V
GE
=17V
15V
13V
A
50
I
C
A
50
I
C
40
40
30
20
9V
11V
30
20
10
0
0.0
9V
10
0
0.0
0.5
1.0
1.5
2.0
2.5
V
CE
3.0
V
0.5
1.0
1.5
2.0
2.5 3.0
V
CE
3.5
V
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
60
A
50
I
C
V
CE
= 20V
T
J
= 25°C
80
A
70
I
F
60
50
40
30
20
T
J
= 25°C
T
J
= 125°C
40
30
20
10
0
5
6
7
8
9
10
V
GE
10
0
11
V
0
1
2
V
F
3
V
4
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
60
A
I
RM
t
rr
20
V
V
CE
= 600V
I
C
= 25A
300
ns
t
rr
V
GE
15
40
200
10
20
5
I
RM
T
J
= 125°C
V
R
= 600V
I
F
= 25A
100
35-12
0
0
20
40
60
80
100 120 140
nC
Q
G
0
0
200
400
600
800
A/µs
-di/dt
0
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
©1998 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
842
MWI 35-12 A5
14
12
mJ
E
on
10
140
120
ns
100
t
d(on)
t
r
E
on
80
V
CE
= 600V
V
GE
= ±15V
R
G
= 47Ω
T
J
= 125°C
6
mJ
5
t
E
off
E
off
t
d(off)
600
ns
500
400 t
V
CE
= 600V
V
GE
= ±15V
R
G
= 47Ω
T
J
= 125°C
4
3
8
6
4
2
0
0
300
200
100
0
60
40
20
0
2
1
0
0
10
20
30
40
I
C
t
f
50 A
10
20
30
I
C
40
50
A
Fig. 7 Typ. turn on energy and switching
times versus collector current
12
mJ
10
E
on
240
t
d(on)
E
on
t
r
ns
180
t
E
off
Fig. 8 Typ. turn off energy and switching
times versus collector current
5
mJ
1500
V
CE
= 600V
V
GE
= ±15V
I
C
= 35A
T
J
= 125°C
8
6
4
V
CE
= 600V
V
GE
= ±15V
I
C
= 35A
T
J
= 125°C
4
3
t
d(off)
E
off
ns
1200
t
900
600
300
0
200
Ω
240
t
f
120
2
60
2
0
0
40
80
120
160
R
G
0
200
Ω
240
1
0
0
40
80
120
160
R
G
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
Fig.10 Typ. turn off energy and switching
times versus gate resistor
70
A
60
I
CM
50
10
K/W
1
Z
thJC
R
G
= 47Ω
T
J
= 125°C
V
CEK
< V
CES
40
30
20
10
0
0
200
400
0.1
0.01
0.001
diode
IGBT
single pulse
35-12
600
800 1000 1200
V
V
CE
0.0001
0.00001 0.0001
0.001
0.01
t
0.1
s
1
Fig. 11 Reverse biased safe operating area
RBSOA
Fig. 12 Typ. transient thermal impedance
©1998 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
842
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