PD- 5041
PRELIMINARY
CPV364M4U
UltraFast IGBT
1
D1
9
4
6
Q2
D2
12
Q4
D4
18
D3
15
10
Q6
D6
D5
16
3
Q1
Q3
Q5
IGBT SIP MODULE
Features
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFRED
TM
soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
Product Summary
7
13
Output Current in a Typical 20 kHz Motor Drive
12 A
RMS
per phase (3.5 kW total) with T
C
= 90°C, T
J
= 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 115% (See Figure 1)
19
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
IMS-2
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
V
ISOL
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 minute
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
20
10
60
60
9.3
60
±20
2500
63
25
-40 to +150
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55-0.8 N•m)
Units
V
A
V
V
RMS
W
°C
Thermal Resistance
Parameter
R
θJC
(IGBT)
R
θJC
(DIODE)
R
θCS
(MODULE)
Wt
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
Typ.
–––
–––
0.10
20 (0.7)
Max.
2.0
3.0
–––
–––
Units
°C/W
g (oz)
1/21/97
CPV364M4U
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
∆V
(BR)CES
/∆T
J
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
V
FM
I
GES
Parameter
Min.
Collector-to-Emitter Breakdown Voltage 600
Temperature Coeff. of Breakdown Voltage –––
Collector-to-Emitter Saturation Voltage –––
–––
–––
Gate Threshold Voltage
3.0
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
11
Zero Gate Voltage Collector Current
–––
–––
Diode Forward Voltage Drop
–––
–––
Gate-to-Emitter Leakage Current
–––
Typ.
–––
0.63
1.56
1.84
1.56
–––
-13
18
–––
–––
1.3
1.2
–––
Max. Units
Conditions
–––
V
V
GE
= 0V, I
C
= 250µA
––– V/°C V
GE
= 0V, I
C
= 1.0mA
2.1
I
C
= 10A
V
GE
= 15V
See Fig. 2, 5
–––
V
I
C
= 20A
–––
I
C
= 10A, T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
––– mV/°C V
CE
= V
GE
, I
C
= 250µA
–––
S
V
CE
= 100V, I
C
= 10A
250
µA
V
GE
= 0V, V
CE
= 600V
3500
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
1.7
V
I
C
= 15A
See Fig. 13
1.6
I
C
= 15A, T
J
= 150°C
±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Charge
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
100
16
40
41
13
96
110
0.26
0.18
0.44
39
15
220
160
0.74
2100
110
34
42
74
4.0
6.5
80
220
188
160
Max. Units
Conditions
160
I
C
= 10A
24
nC
V
CC
= 400V
55
V
GE
= 15V
See Fig. 8
–––
T
J
= 25°C
–––
ns
I
C
= 10A, V
CC
= 480V
140
V
GE
= 15V, R
G
= 10Ω
160
Energy losses include "tail" and
–––
diode reverse recovery.
–––
mJ See Fig. 9, 10, 11, 18
0.7
–––
T
J
= 150°C,
See Fig. 9, 10, 11, 18
–––
ns
I
C
= 10A, V
CC
= 480V
–––
V
GE
= 15V, R
G
= 10Ω
–––
Energy losses include "tail" and
–––
mJ diode reverse recovery.
–––
V
GE
= 0V
–––
pF
V
CC
= 30V
See Fig. 7
–––
ƒ = 1.0MHz
60
ns
T
J
= 25°C See Fig.
14
I
F
= 15A
120
T
J
= 125°C
6.0
A
T
J
= 25°C See Fig.
15
V
R
= 200V
10
T
J
= 125°C
180
nC
T
J
= 25°C See Fig.
600
T
J
= 125°C
16
di/dt =200Aµs
––– A/µs T
J
= 25°C See Fig.
–––
T
J
= 125°C
17
CPV364M4U
20
18
16
5.85
4.68
4.10
3.51
2.93
2.34
1.76
1.17
0.59
0.00
14
12
10
8
6
4
2
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector-to-Emitter Current (A)
10
T
J
= 150°C
T
J
= 150°C
10
T
J
= 25°C
T
J
= 25°C
1
0.1
1
V
G E
= 15V
20µs PULSE WIDTH
10
A
1
5
6
7
V
C C
= 10V
5µs PULSE WIDTH
8
9
Total Output Power (kW)
A
LOAD CURRENT (A)
T c = 9 0° C
T j = 1 25 ° C
P ow er F ac tor = 0 .8
M o d ula tio n D ep th = 1 .15
V c c = 50 % o f R a ted V o lta g e
5.27
V
C E
, Collector-to-Emitter Voltage (V)
V
G E
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
CPV364M4U
20
2.0
V
GE
= 15V
80 us PULSE WIDTH
I
C
= 20A
16
V
CE
, Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
1.8
12
1.6
I
C
= 10A
8
1.4
4
I
C
=
5.0
A
5
1.2
0
25
50
75
100
125
150
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T C , Case Temperature ( ° C)
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
T herm al R espon se (Z
thJC
)
1
D = 0.50
0.20
0.10
0.05
P
D M
0 .1
0.02
0.01
t
S ING LE P ULS E
(T HERMA L RE SPO NS E)
1
t2
N otes:
1 . D uty fac tor D = t
1
/ t
2
0.01
0.0000 1
2. P eak TJ = P D M x Z thJ C + T C
0.000 1
0 .00 1
0.01
0.1
1
10
t
1
, R e c ta ng ula r P u ls e D ur at io n (se c)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
CPV364M4U
4000
V
GE
, Gate-to-Emitter Voltage (V)
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
Cies
20
V
CC
= 400V
I
C
= 10A
16
C, Capacitance (pF)
3000
12
2000
8
Coes
1000
Cres
4
0
1
10
100
0
0
20
40
60
80
100
120
VCE , Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.70
V
CC
= 480V
V
GE
= 15V
T
J
= 25
°
C
0.65
I
C
= 10A
10
R
G
= 10Ohm
Ω
V
GE
= 15V
V
CC
= 480V
Total Switching Losses (mJ)
0.60
Total Switching Losses (mJ)
I
C
=
20
A
1
0.55
I
C
=
10
A
I
C
=
5.0
A
5
0.50
0.45
0.40
0
10
20
30
40
50
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
R
G
, Gate Resistance (Ohm)
Ω
T
J
, Junction Temperature (
°
)
C
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
FPGA/CPLD
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