电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MX25L6408DMI-12G

产品描述EEPROM, 32MX2, Serial, CMOS, PDSO16, 0.300 INCH, ROHS COMPLIANT, MS-013, SOP-16
产品类别存储    存储   
文件大小3MB,共56页
制造商Macronix
官网地址http://www.macronix.com/en-us/Pages/default.aspx
标准
下载文档 详细参数 全文预览

MX25L6408DMI-12G概述

EEPROM, 32MX2, Serial, CMOS, PDSO16, 0.300 INCH, ROHS COMPLIANT, MS-013, SOP-16

MX25L6408DMI-12G规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Macronix
零件包装代码SOIC
包装说明SOP, SOP16,.4
针数16
Reach Compliance Codeunknown
ECCN代码3A991.B.1.B.1
备用内存宽度1
最大时钟频率 (fCLK)86 MHz
耐久性100000 Write/Erase Cycles
JESD-30 代码R-PDSO-G16
长度10.3 mm
内存密度67108864 bit
内存集成电路类型EEPROM
内存宽度2
功能数量1
端子数量16
字数33554432 words
字数代码32000000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织32MX2
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP16,.4
封装形状RECTANGULAR
封装形式SMALL OUTLINE
并行/串行SERIAL
峰值回流温度(摄氏度)NOT SPECIFIED
电源3/3.3 V
认证状态Not Qualified
座面最大高度2.65 mm
串行总线类型3-WIRE
最大待机电流0.00002 A
最大压摆率0.025 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
类型NOR TYPE
宽度7.52 mm
写保护HARDWARE/SOFTWARE
Base Number Matches1

文档预览

下载PDF文档
MX25L1608D
MX25L3208D
MX25L6408D
FEATURES
16M-BIT [x 1 / x 2] CMOS SERIAL FLASH
32M-BIT [x 1 / x 2] CMOS SERIAL FLASH
64M-BIT [x 1 / x 2] CMOS SERIAL FLASH
GENERAL
• Serial Peripheral Interface compatible -- Mode 0 and Mode 3
16M:16,777,216 x 1 bit structure or 8,388,608 x 2 bits (two I/O read mode) structure
32M:33,554,432 x 1 bit structure or 16,772,216 x 2 bits (two I/O read mode) structure
64M:67,108,864 x 1 bit structure or 33,554,432 x 2 bits (two I/O read mode) structure
• 512 Equal Sectors with 4K byte each (16Mb)
1024 Equal Sectors with 4K byte each (32Mb)
2048 Equal Sectors with 4K byte each (64Mb)
- Any Sector can be erased individually
• 32 Equal Blocks with 64K byte each (16Mb)
64 Equal Blocks with 64K byte each (32Mb)
128 Equal Blocks with 64K byte each (64Mb)
- Any Block can be erased individually
• Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1V
PERFORMANCE
• High Performance
- Fast access time: 86MHz serial clock
- Serial clock of two I/O read mode : 50MHz, which is equivalent to 100MHz
- Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page)
- Byte program time: 9us (typical)
- Continuously program mode (automatically increase address under word program mode)
- Fast erase time: 60ms(typ.) /sector (4K-byte per sector) ; 0.7s(typ.) /block (64K-byte per block); 14s(typ.) /chip
for 16Mb, 25s(typ.) for 32Mb, and 50s(typ.) for 64Mb
• Low Power Consumption
- Low active read current: 25mA(max.) at 86MHz, and 10mA(max.) at 33MHz
- Low active programming current: 20mA (max.)
- Low active erase current: 20mA (max.)
- Low standby current: 20uA (max.)
- Deep power-down mode 1uA (typical)
• Typical 100,000 erase/program cycles
• 20 years of data retention
SOFTWARE FEATURES
• Input Data Format
- 1-byte Command code
• Advanced Security Features
- Block lock protection
The BP0-BP3 status bit defines the size of the area to be software protection against program and erase instruc-
tions
- Additional 512-bit secured area for unique identifier
• Auto Erase and Auto Program Algorithm
-
Automatically erases and verifies data at selected sector
-
Automatically programs and verifies data at selected page by an internal algorithm that automatically times the
program pulse widths (Any page to be programed should have page in the erased state first)
P/N: PM1505
1
REV. 1.0, AUG. 28, 2009

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2772  2473  1936  1431  2419  1  32  52  15  59 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved