VDI 50-12P1
VID 50-12P1
VII 50-12P1
VIO 50-12P1
IGBT Modules
in ECO-PAC 2
Short Circuit SOA Capability
Square RBSOA
Preliminary data sheet
VIO
IJK 10
I
C25
= 49 A
V
CES
= 1200 V
V
CE(sat) typ.
= 3.1 V
VII
OP9
VID
IK10
VDI
AC1
L9
X13
E2
GH10
SV18
X15
L9
NTC
X15
T16
NTC
AC1
A1
S18
LMN 9
NTC
L9
X15
F1
X16
PS18
B3
Pin arangement see outlines
K10
VX18
X16
IK10
X16
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
T
C
= 25°C
T
C
= 80°C
V
GE
= ±15 V; R
G
= 47
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
1200
± 20
V
de
49
33
A
A
50
A
V
CES
10
µs
W
208
3.1
3.5
3.7
6.5
1.1
4.2
180
100
70
500
70
4.6
3.4
1.65
1.2
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
0.6 K/W
K/W
ne
4.5
V
CE
= V
CES
; V
GE
= ±15 V; R
G
= 47
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Conditions
w
r
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
R
thJC
R
thJH
I
C
= 50 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 1 mA; V
GE
= V
CE
V
CE
= V
CES
;
fo
No
V
CE
= 0 V; V
GE
=
±
20 V
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 30 A
V
GE
= 15/0 V; R
G
= 47
Ω
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
t
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
si
V
gn
Features
Advantages
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
• FRED diodes
- fast reverse recovery
- low forward voltage
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
• space and weight savings
• reduced protection circuits
• leads with expansion bend for stress relief
Typical Applications
• AC and DC motor control
• AC servo and robot drives
• power supplies
• welding inverters
Recommended replacement:
Please contact your local
sales office
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
1-4
0650
VDI 50-12P1
VID 50-12P1
Reverse diodes (FRED)
Symbol
I
F25
I
F80
Symbol
V
F
I
RM
t
rr
R
thJC
R
thJH
Conditions
T
C
= 25°C
T
C
= 80°C
Conditions
I
F
= 30 A;
T
VJ
= 25°C
T
VJ
= 125°C
Maximum Ratings
49
31
A
A
VII
VII 50-12P1
VIO 50-12P1
Characteristic Values
min.
typ. max.
2.4
1.77
27
150
2.6
2.7
V
V
A
ns
1.3 K/W
K/W
I
F
= 30 A; di
F
/dt = 500 A/µs; T
VJ
= 125°C
V
R
= 600 V; V
GE
= 0 V
with heatsink compound (0.42 K/m.K; 50 µm)
B3
Temperature Sensor NTC
Symbol
R
25
B
25/50
Module
Symbol
T
VJ
T
stg
V
ISOL
M
d
a
Symbol
d
S
d
A
Weight
I
ISOL
≤
1 mA; 50/60 Hz
mounting torque (M4)
Max. allowable acceleration
Conditions
Conditions
Maximum Ratings
-40...+150
-40...+150
Conditions
T = 25°C
4.75
5.0
3375
5.25 kΩ
K
w
ne
11.2
11.2
24
VID
1.5 - 2.0
14 - 18
50
Characteristic Values
min. typ. max.
mm
mm
g
VDI
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
2-4
0650
Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated.
No
t
fo
r
Creepage distance on surface
(Pin to heatsink)
Strike distance in air
(Pin to heatsink)
de
°C
°C
3000
V~
Nm
lb.in.
m/s
2
si
gn
VIO
Characteristic Values
min. typ. max.
VDI 50-12P1
VID 50-12P1
80
A
I
C
V
GE
= 17 V
15 V
13 V
11V
VII 50-12P1
VIO 50-12P1
80
A
I
C
60
V
GE
= 17V
15V
13V
11V
60
40
T
VJ
= 25°C
40
20
9V
20
9V
T
VJ
= 125°C
42T120
0
0
1
2
3
4
V
CE
42T120
0
5
6
V
7
0
1
2
3
4
5
V
CE
6
V
7
B3
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
80
A
I
C
50
40
A
30
V
CE
= 20V
20
T
VJ
= 125°C
T
VJ
= 25°C
42T120
w
de
20
10
0
40
si
T
VJ
= 125°C
60
I
F
gn
T
VJ
= 25°C
42T120
0
4
6
8
10
12
V
GE
ne
14
V
16
0
1
2
V
F
3
V
4
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
50
t
rr
r
20
V
200
160
ns
120
T
VJ
= 125°C
V
R
= 600 V
I
F
= 15 A
fo
15
V
GE
40
A
I
RM
t
rr
10
No
V
CE
= 600V
I
C
= 25A
t
30
20
10
I
RM
42T120
80
40
5
0
0
40
80
120
Q
G
nC
0
0
200
400
600
-di/dt
42T120
0
160
800
A/μs
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
0650
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
3-4
VDI 50-12P1
VID 50-12P1
15
mJ
E
on
150
ns
100 t
E
off
VII 50-12P1
VIO 50-12P1
600
ns
400 t
E
off
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 47
Ω
T
VJ
= 125°C
12
mJ
t
d(off)
10
8
V
CE
= 600V
V
GE
= ±15V
R
G
= 47Ω
T
VJ
= 125°C
t
d(on)
t
r
5
50
4
200
E
on
0
0
20
40
I
C
A
42T120
t
f
0
0
0
20
40
I
C
A
42T120
60
0
60
B3
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current
160
4
mJ
E
on
t
d(on)
8
mJ
t
E
off
gn
si
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 25 A
T
VJ
= 125°C
t
d(off)
800
ns
ns
120
3
E
on
t
r
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 25 A
T
VJ
= 125°C
42T120
6
E
off
600
t
1
40
de
2
80
4
400
2
200
t
f
w
0
0
20
40
60
R
G
80
Ω
100
0
0
0
20
40
60
R
G
42T120
80
Ω
100
0
Fig. 9 Typ. turn on energy and switching
ne
10
K/W
Z
thJC
1
Fig. 10 Typ. turn off energy and switching
times versus gate resistor
60
A
I
CM
r
fo
diode
40
R
G
= 47
Ω
T
VJ
= 125°C
IGBT
0,1
0,01
single pulse
20
No
t
0,001
42T120
0
0
200
400
600
V
CE
800 1000 1200 1400
V
0,0001
0,00001 0,0001 0,001
MDI...50-12P1
0,01
0,1
t
1
s 10
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance
RBSOA
0650
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
4-4
嵌入式系统
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