AH314
2.3-2.9 GHz 2W 5V Linear Driver Amplifier
Applications
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•
WCDMA / WiMAX / WiBro / WiFi / LTE
Wireless infrastructure
24-pin 5x5mm leadless QFN SMT package
Product Features
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•
•
•
•
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•
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2.3 – 2.9 GHz
23 dB Gain
EVM <2.5 %@ 25 dBm Pout
<0.2 dB Gain Flatness Across 200 MHz BW
+33dBm P1dB
Internal Active Bias
+5V Single Supply Voltage
Lead-free/RoHS-compliant 5x5 mm QFN Package
Functional Block Diagram
General Description
The AH314 is a high dynamic range broadband driver
amplifier in a surface mount package. The two-stage
amplifier has 23 dB of gain, while achieving +25 dBm of
linear output power for 2.3–2.9 GHz applications.
AH314 uses a high reliability +5V InGaP/GaAs HBT
process technology. The device incorporates proprietary
bias circuitry to compensate for variations in linearity and
current draw over temperature. An internal active bias
allows the AH314 to operate directly off a commonly
available +5V supply. The RoHS-compliant/lead-free
5x5mm QFN package is surface mountable to allow for
low manufacturing costs to the end user. The AH314 is
also package and pin compatible with the 3.3-3.8 GHz
AH315 and the 0.7-2.7 GHz AH323.
The AH314 is targeted for use in a configuration for the
driver stage amplifier in next generation base stations
where high linearity and medium power is required.
Pin Configuration
Pin No.
1
2
3, 6, 7, 8, 9, 10, 14, 20
4, 5
11, 12, 13
15
16
17
19
Backside paddle
Function
Iref1
Vbias1
GND/NC
RFin
RFout
Vcc2
Iref2
Vbias2
Vcc1
GND
Ordering Information
Part No.
AH314-G
AH314-PCB
Description
2.3-2.9 GHz 2W 5V Linear Driver Amplifier
2.5-2.7 GHz Evaluation Board
Standard T/R size
= 1000 pieces on a 7” reel
.
Data Sheet: Rev A 08/27/10
© 2010 TriQuint Semiconductor, Inc.
-
1 of 9
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
AH314
2.3-2.9 GHz 2W 5V Linear Driver Amplifier
Specifications
Absolute Maximum Ratings
Parameter
Storage Temperature
RF Input Power, CW, 50Ω,T = 25ºC
Device Voltage, Vcc, Vbias
Collector Current, Icc (Icc1 + Icc2)
Iref 1
Iref 2
Device Power
Thermal Resistance R
TH
Recommended Operating Conditions
Parameter
V
cc
I
cc
T
J
(for >10
6
hours MTTF)
Operating Temp. Range
Rating
-55 to +125
o
C
+19 dBm
+8 V
1600 mA
100 mA
50 mA
8W
14.4
o
C/W
Min
+4.75
Typ
+5
600
Max Units
+6
+200
+85
V
mA
o
C
o
C
-40
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Electrical Specifications
Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 2.6 GHz, in tuned application circuit.
Parameter
Operational Frequency Range
Test Frequency
Power Gain
Input Return Loss
Output Return Loss
EVM @ 24 dBm
Efficiency @ 24 dBm
Output P1dB
OIP3 (@ 18 dBm/Tone, ,
∆f
= 1 MHz)
Noise Figure
Device Voltage, Vcc
Iref 1
Iref 2
Quiescent Current, Icq
Conditions
Min
2.3
20.5
Typical
2.6
23
8.2
16.7
2.0
6.6
+33
+42
6.4
+5
24
10
600
Max
2.9
Units
GHz
GHz
dB
dB
dB
%
%
dBm
dBm
dB
V
mA
mA
mA
See Note 1.
2.5
See Note 2.
550
650
Notes:
1. Using an 802.16-2004 OFDMA, 64QAM-1/2, 1024-FFT, 20 symbols, 30 subchannels.
2. This corresponds to the quiescent current or operating current under small-signal conditions with bias resistor R1=68Ω off pin 1 and
R2=150Ω off pin 16.
Data Sheet: Rev A 08/27/10
© 2010 TriQuint Semiconductor, Inc.
-
2 of 9
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
AH314
2.3-2.9 GHz 2W 5V Linear Driver Amplifier
Device Characterization Data
V
CC
= +5 V, I
CQ
= 600 mA, T = 25
°C,
unmatched 50 ohm system, calibrated to device leads
Gain vs. Frequency
30
25
20
15
0
Input Smith Chart
1
0.8
0.6
0.4
0.2
Output Smith Chart
4 GHz
Gain (dB)
10
5
0
0
1
2
3
Frequency (GHz)
4
5
6
0.05 GHz
-1 -0.75-0.5-0.25
2
0 0.25 0.5 0.75 1
-0.
4 GHz
-0.4
-0.6
-0.8
-1
0.05 GHz
Notes:
The gain for the unmatched device in 50ohm system is shown as the trace in blue color. The impedance plots are shown from 0.5 – 4 GHz
with markers placed at 0.05 GHz and 4 GHz.
S-Parameter Data
V
CC
= +5 V, I
CQ
= 600 mA, T = 25
°C,
unmatched 50 ohm system, calibrated to device leads
Freq (MHz)
2200
2250
2300
2350
2400
2450
2500
2550
2600
2650
2700
2750
2800
2850
2900
2950
3000
S11 (dB)
-6.45
-6.78
-7.13
-7.45
-7.81
-8.23
-8.68
-9.18
-9.69
-10.16
-10.53
-10.73
-10.68
-10.36
-9.90
-9.64
-10.22
S11 (ang)
-120.54
-130.36
-138.36
-144.94
-150.37
-154.71
-158.06
-160.55
-161.94
-162.13
-161.30
-159.84
-158.59
-158.56
-161.62
-169.83
175.73
S21 (dB)
23.31
23.13
22.99
22.95
22.95
23.00
23.09
23.28
23.51
23.78
24.11
24.53
25.03
25.69
26.43
27.14
27.49
S21 (ang)
-145.39
-158.46
-170.95
177.21
165.61
154.08
142.57
131.04
119.35
107.23
94.68
81.54
67.41
52.45
35.26
14.38
-10.77
S12 (dB)
-48.04
-47.97
-48.01
-48.10
-48.27
-48.56
-48.96
-49.41
-49.99
-50.72
-51.59
-52.51
-53.25
-53.15
-51.90
-49.90
-48.05
S12 (angle)
60.39
52.65
45.37
38.67
31.91
24.85
17.33
8.81
-0.931
-12.17
-26.06
-43.81
-67.29
-96.50
-128.68
-160.49
168.76
S22 (dB)
-2.33
-2.65
-2.98
-3.31
-3.65
-4.01
-4.39
-4.78
-5.19
-5.65
-6.17
-6.8
-7.77
-9.09
-11.10
-12.82
-9.75
S22 (ang)
157.17
156.54
156.14
155.90
155.85
155.98
156.31
156.65
157.10
157.78
158.54
159.55
161.17
164.03
172.59
-160.65
-129.23
Data Sheet: Rev A 08/27/10
© 2010 TriQuint Semiconductor, Inc.
-
3 of 9
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
AH314
2.3-2.9 GHz 2W 5V Linear Driver Amplifier
2.5 – 2.7 GHz Application Circuit (AH314-PCB)
Notes:
1.
2.
3.
4.
C12 to be placed as close as possible to the device
C11 = 47 pF is critical. Do Not Replace with any other value.
Place C19 between marking 3 and 4.
See PC Board Layout on page 8 for more details.
Bill of Material
Ref Des
U1
C1, C2, C4, C11,
15, C16, C17, C18
C5, C6, C7
C8
C12
C19
L1
R1
R2
R3, R4, R5
R6
Value
47 pF
1000 pF
4.7 uF
0.1 uF
1.9 pF
18 nH
68
Ω
150
Ω
0
Ω
0
Ω
Description
2W Driver Amplifier
Cap, Chip, 0805, 2%, 50V
Cap, Chip, 0603, 5%, 50V, NPO-COG
Cap, Chip, 6032, 20%, 35V, TANT
Cap, Chip, 0805, 5%, 25V, X7R
Cap, Chip, 0603, ± 0.05 pF, 50VAccu-P
Ind, Chip, 0603, 5%, mulilayer
Res, Chip, 0603, 5%, 1/16W
Res, Chip, 0603, 5%, 1/16W
Res, Chip, 0805, 1/10W
Res, Chip, 0603, 5%, 1/16W
Manufacturer
TriQuint
various
various
various
various
AVX
TOKO
various
various
various
various
Part Number
AH314-PCB
06035J1R3ABTTR
LL1608-FSL18NJ
Data Sheet: Rev A 08/27/10
© 2010 TriQuint Semiconductor, Inc.
-
4 of 9
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
AH314
2.3-2.9 GHz 2W 5V Linear Driver Amplifier
Typical Performance 2.5 – 2.7 GHz (AH314-PCB)
Test conditions unless otherwise noted:
Vpd, Vbias, Vcc = 5V, I
CQ
= 600 mA, +25 °C
Frequency
Gain
Input Return Loss
Output Return Loss
Noise Figure
Output P1dB
EVM @ 24 dBm (1)
OIP3 @ 18 dBm/Tone,
∆f
= 1 MHz
GHz
dB
dB
dB
dB
dBm
%
dBm
2.5
22.5
7
15
2.6
23
8.2
16.7
6.4
+33
2
+42
2.7
22.5
10
12
+41
2.5
+40
Note: 1.
Using an 802.16-2004 OFDMA, 64QAM-1/2, 1024-FFT, 20 symbols, 30 subchannels.
Gain vs. Frequency
25
Return Loss vs. Frequency
0
Gain vs. Pout vs. Temperature
26
25
24
+85 C
+25 C
- 40 C
Freq = 2.6 GHz
24
S11, S22 (dB)
-5
Gain (dB)
Gain (dB)
23
-10
S11
S22
23
22
21
QFDM, QAM-64, 54 Bb/S
22
-15
21
-20
20
2.4
2.5
2.6
2.7
Frequency (GHz)
2.8
2.9
-25
2.4
2.5
2.6
2.7
Frequency (GHz)
2.8
2.9
20
20
22
24
26
28
30
Output Power (dBm)
32
34
EVM vs. Pout vs. Frequency
5
Vcc = 5 V
EVM vs Pout vs Frequency
5
Vcc = 6 V
5
2.5 GHz
2.6 GHz
2.7 GHz
EVM vs Pout vs Temperature
Freq = 2.6 GHz
4
EVM (%)
4
2.5 GHz
2.6 GHz
2.7 GHz
4
3
2
1
+85 C
+25 C
- 40 C
EVM (%)
2
1
QFDM, QAM-64, 54 Bb/S
2
1
QFDM, QAM-64, 54 Bp/S
0
16
18
20
22
Pout (dBm)
24
26
0
17
19
21
23
Pout (dBm)
25
27
EVM (%)
3
3
0
16
18
20
22
Pout (dBm)
24
26
OIP3 vs. Frequency
46
44
42
40
38
36
2.3
2.4
2.5
Frequency (GHz)
2.6
2.7
OIP3 (dBm)
OIP3 vs. Output Power/tone
46
44
42
40
38
36
16
18
20
22
Output Power / Tone (dBm)
24
26
2.5GHz, 1MHz tone spacing
1MHz tone spacing, +18 dBm/tone
Data Sheet: Rev A 08/27/10
© 2010 TriQuint Semiconductor, Inc.
OIP3 (dBm)
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Disclaimer: Subject to change without notice
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