PROFET® BTS 410 D2
Smart Highside Power Switch
Features
•
Overload protection
•
Current limitation
•
Short circuit protection
•
Thermal shutdown
•
Overvoltage protection (including load dump)
•
Fast demagnetization of inductive loads
•
Reverse battery protection
1)
•
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
•
CMOS diagnostic output
•
Open load detection in ON-state
•
CMOS compatible input
•
Loss of ground and loss of
V
bb
protection
•
Electrostatic discharge
(ESD) protection
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
V
bb(AZ)
V
bb(on)
R
ON
I
L(ISO)
I
L(SCr)
65
V
4.7 ... 42 V
220 mΩ
1.8
A
5
A
TO-220AB/5
5
1
Straight leads
5
5
1
Standard
SMD
Application
• µC
compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
•
All types of resistive, inductive and capacitve loads
•
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS
®
technology. Fully protected by embedded protection
functions.
+ V bb
3
Voltage
source
Overvoltage
protection
Current
limit
Gate
protection
V
Logic
Voltage
sensor
Charge pump
Level shifter
Rectifier
Open load
ESD
Logic
detection
Limit for
unclamped
ind. loads
OUT
2
IN
Temperature
sensor
5
Load
4
ST
Short circuit
detection
GND
®
PROFET
Load GND
1
Signal GND
1
)
With external current limit (e.g. resistor R
GND
=150
Ω)
in GND connection, resistors in series with IN and ST
connections, reverse load current limited by connected load.
Semiconductor Group
1
03.97
BTS 410 D2
Pin
1
2
3
4
5
Symbol
GND
IN
Vbb
ST
OUT
(Load, L)
-
I
+
S
O
Function
Logic ground
Input, activates the power switch in case of logical high signal
Positive power supply voltage,
the tab is shorted to this pin
Diagnostic feedback, low on failure
Output to the load
Maximum Ratings
at
T
j
= 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 3)
Load dump protection
2
)
V
LoadDump
=
U
A
+
V
s
,
U
A
= 13.5 V
R
I
3
)
= 2
Ω,
R
L
= 6.6
Ω,
t
d
= 400 ms, IN= low or high
Load current (Short circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC), T
C
≤
25 °C
Inductive load switch-off energy dissipation, single pulse
V
bb
= 12V,
T
j,start
= 150°C,
T
C
= 150°C const.
I
L
= 1.8 A, Z
L
= 2.3 H, 0
Ω:
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Symbol
V
bb
V
Load dump4
)
Values
65
100
self-limited
-40 ...+150
-55 ...+150
50
4.5
1
2
-0.5 ... +6
±5.0
±5.0
Unit
V
V
A
°C
W
J
kV
V
mA
I
L
T
j
T
stg
P
tot
E
AS
V
ESD
V
IN
I
IN
I
ST
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
Thermal Characteristics
Parameter and Conditions
Thermal resistance
Symbol
min
--
--
--
chip - case:
R
thJC
junction - ambient (free air):
R
thJA
SMD version, device on PCB
5)
:
Values
typ
max
--
2.5
--
75
35
--
Unit
K/W
2
)
3)
4)
5
)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins, e.g. with a
150
Ω
resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.
R
I
= internal resistance of the load dump test pulse generator
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Semiconductor Group
2
BTS 410 D2
Electrical Characteristics
Parameter and Conditions
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
T
j
=25 °C:
T
j
=150 °C:
Nominal load current, ISO Norm (pin 3 to 5)
V
ON
= 0.5 V,
T
C
= 85 °C
Output current (pin
5
) while GND disconnected or
GND pulled up,
V
bb
=30 V,
V
IN
= 0, see diagram
page 7,
T
j
=-40...+150°C
Turn-on time
IN
to 90%
V
OUT
:
to 10%
V
OUT
:
Turn-off time
IN
R
L
= 12
Ω
,
T
j
=-40...+150°C
Slew rate on
10 to 30%
V
OUT
,
R
L
= 12
Ω
,
T
j
=-40...+150°C
Slew rate off
70 to 40%
V
OUT
,
R
L
= 12
Ω
,
T
j
=-40...+150°C
Operating Parameters
Operating voltage
6
)
Undervoltage shutdown
On-state resistance (pin 3 to 5)
I
L
= 1.6 A
R
ON
--
190
390
220
440
--
1
mΩ
I
L(ISO)
I
L(GNDhigh)
1.6
--
1.8
--
A
mA
µs
t
on
t
off
dV /dt
on
-dV/dt
off
12
5
--
--
--
--
--
--
125
85
3
6
V/µs
V/µs
T
j
=-40...+150°C:
T
j
=25°C:
T
j
=-40...+150°C:
T
j
=-40...+150°C:
Undervoltage restart
Undervoltage restart of charge pump
see diagram page 12
Undervoltage hysteresis
∆
V
bb(under)
=
V
bb(u rst)
-
V
bb(under)
T
j
=-40...+150°C:
Overvoltage shutdown
T
j
=-40...+150°C:
Overvoltage restart
T
j
=-40...+150°C:
Overvoltage hysteresis
T
j
=-40...+150°C:
Overvoltage protection
7
)
I
bb
=4 mA
T
j
=-40...+25°C
:
Standby current (pin 3)
V
IN
=0, I
ST
≤0
,
T
j
= 150°C:
Leakage output current (included in
I
bb(off)
)
V
IN
=0
Operating current (Pin 1)
8)
,
V
IN
=5 V,
T
j
=-40...+150°C
6
)
7)
V
bb(on)
V
bb(under)
V
bb(u rst)
V
bb(ucp)
∆
V
bb(under)
4.7
2.9
2.7
--
--
--
42
40
--
65
--
--
--
--
--
--
--
--
5.6
0.1
--
--
0.1
70
10
18
--
1
42
4.5
4.7
4.9
6.0
--
52
--
--
--
15
25
20
2.1
V
V
V
V
V
V
V
V
V
µA
µA
mA
V
bb(over)
V
bb(o rst)
∆
V
bb(over)
V
bb(AZ)
I
bb(off)
I
L(off)
I
GND
At supply voltage increase up to
V
bb
= 5.6 V typ without charge pump,
V
OUT
≈
V
bb
- 2 V
Meassured without load
.
See also
V
ON(CL)
in table of protection functions and circuit diagram page 7.
Semiconductor Group
3
BTS 410 D2
Parameter and Conditions
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)
9
)
,
I
L(SCp)
( max 450
µs
if
V
ON
>
V
ON(SC)
)
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
Overload shutdown current limit
I
L(SCr)
V
ON
= 8 V,
T
j
=
T
jt
(see timing diagrams, page 10)
Short circuit shutdown delay after input pos. slope
V
ON
>
V
ON(SC)
,
T
j
=-40..+150°C:
t
d(SC)
min value valid only, if input "low" time exceeds 60
µs
9
--
4
--
--
--
12
--
5
--
23
--
15
--
450
A
A
µs
V
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
I
L
= 40 mA,
T
j
=-40..+150°C:
I
L
= 1 A,
T
j
=-40..+150°C:
Short circuit shutdown detection voltage
(pin 3 to 5)
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1)
10
)
Diagnostic Characteristics
Open load detection current
(on-condition)
V
ON(CL)
61
--
--
150
--
--
68
--
8.5
--
10
--
73
75
--
--
--
32
V
ON(SC)
T
jt
∆T
jt
-V
bb
V
°C
K
V
T
j
=-40 ..150°C:
I
L (OL)
2
--
150
mA
8
)
9
)
Add
I
ST
, if
I
ST
> 0, add
I
IN
, if
V
IN
>5.5 V
Short circuit current limit for max. duration of t
d(SC) max
=450
µs,
prior to shutdown
10
) Requires 150
Ω
resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 7).
Semiconductor Group
4
BTS 410 D2
Parameter and Conditions
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Input and Status Feedback
11
)
Input turn-on threshold voltage
T
j
=-40..+150°C:
T
j
=-40..+150°C:
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current (pin 2),
V
IN
= 0.4 V
On state input current (pin 2),
V
IN
= 5 V
Status invalid after positive input slope
Tj=-40
... +150°C:
(short circuit)
Status invalid after positive input slope
Tj=-40
... +150°C:
(open load)
Status output (CMOS)
T
j
=-40...+150°C,
I
ST
=
-
50
µA:
T
j
=-40...+150°C,
I
ST
= +1.6 mA:
Max. status current for
current source
(out):
valid status output,
current sink
(in) :
T
j
=-40...+150°C
V
IN(T+)
V
IN(T-)
∆
V
IN(T)
I
IN(off)
I
IN(on)
t
d(ST SC)
t
d(ST)
1.5
1.0
--
1
10
--
300
--
--
0.5
--
25
--
--
2.4
--
--
30
70
450
1400
V
V
V
µA
µA
µs
µs
V
ST(high)12
)
V
ST(low)
-I
ST
+I
ST13)
4.4
--
--
--
5.1
--
--
--
6.5
0.4
0.25
1.6
V
mA
11)
If a ground resistor R
GND
is used, add the voltage drop across this resistor.
VSt high
≈
V
bb
during undervoltage shutdown
13
) No current sink capability during undervoltage shutdown
12
)
Semiconductor Group
5
MEMS传感器
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