Silicon Bipolar MMIC 5 GHz
Active Double Balanced Mixer/
IF Amp
Technical Data
IAM-82008
Features
• RF-IF Conversion Gain:
15 dB from 0.05-5 GHz
• IF Conversion Gain from DC
to 2 GHz
• IF Output P
1dB
:
+8 dBm Typical
• Single Polarity Bias Supply:
V
CC
= 7 to 13 V
• Load Insensitive
Performance
• Conversion Gain Flat over
Temperature
low LO power. Typical
applications include frequency
down-conversion, up-conversion,
modulation, demodulation, and
phase detection. Markets include
fiber-optics, GPS satellite
navigation, mobile radio, and
communications transmitters and
receivers.
The IAM series of Gilbert
multiplier-based frequency
converters is fabricated using
Hewlett Packard's 10 GHz f
T
25
GHz f
MAX
ISOSAT™-1 silicon
bipolar process. This process uses
nitride self-alignment, submicrom-
eter lithography, trench isolation,
ion implantation, gold
metallization, and polyimide inter-
metal dielectric and scratch
protection to achieve excellent
performance, uniformity and
reliability.
Plastic SO-8 Package
Functional Block Diagram
and Pin Configuration
1
2
3
4
8
7
6
5
Description
Hewlett-Packard's IAM-82008 is a
complete moderate-power double-
balanced active mixer housed in a
miniature low cost surface mount
package. It is designed for narrow
or wide bandwidth commercial
and industrial applications having
RF inputs up to 5 GHz. Operation
of RF and LO frequencies below
50 MHz can be achieved using
optional external capacitors to
ground. The IAM-82008 is
particularly well suited for
applications that require load-
insensitive conversion gain and
good spurious signal suppression
and moderate dynamic range with
Pin Description
1
2
3
4
IF Output
V
ee
, AC Ground
V
ee
, AC Ground Thermal Contact
RF Input
8
7
6
5
RF Ground (optional)
V
CC
LO Ground (optional)
LO Input
7-127
5965-9112E
Absolute Maximum Ratings
[1]
(T
A
= 25
°
C)
Symbol
V
d
P
t
P
in RF
P
in LO
T
j
T
STG
θ
jc
Parameter
Device Voltage
Total Device Dissipation
[2]
RF Input Power
LO Input Power
Junction Temperature
Storage Temperature
Thermal Resistance
Junction to Case
[3]
Units
V
mW
dBm
dBm
°C
°C
°C/W
Value
15
1200
C
20
15
IF = 70 MHz
G (dB)
+14
+14
150
-65 to +150
92
10
IF = 2 GHz
5
0
0.1
0.2
0.5
1.0
2.0
5.0
10
RF FREQUENCY (GHz)
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to
this device.
2. Derate at 10.9 mW/°C for T
PIN 3
> 40°C.
3. T
j
= 150°C.
Figure 1. Typical RF to IF Conversion
Gain vs. RF Frequency, T
A
= 25
°
C, Low
Side LO.
IAM-82008 Electrical Specifications
V
CC
= 10 V, Z
O
= 50
Ω,
LO = 0 dBm, RF = -20 dBm, T
A
= 25°C
Symbol
G
C
f
3 dB
RF
f
3 dB
IF
P
1 dB
IP
3
NF
VSWR
Parameter
Conversion Gain, RF = 2 GHz,
LO = 1.75 GHz
RF Bandwidth (G
C
3 dB down),
IF = 250 MHz
IF Bandwidth (G
C
3 dB down),
LO = 2 GHz
Output Power at 1 dB Gain Compression,
RF = 2 GHz, LO = 1.75 GHz
Third Order Inpercept Point,
RF = 2 GHz, LO = 1.75 GHz
SSB Noise Figure
RF Port VSWR
LO Port VSWR
IF Port VSWR
RF
if
LO
if
LO
rf
I
CC
RF Feedthrough at IF Port
LO Leakage at IF Port
LO Leakage at RF Port
Supply Current
dBc
dBm
dBm
mA
40
Units
dB
Minimum
13
Typical
15
Maximum
17
GHz
GHz
dBm
dBm
dB
5.5
0.5
8
18
19
1.5:1
2.0:1
2.5:1
-30
-15
-22
55
65
Note:
1. The recommended operating voltage range for this device is 7 to 13 V. Typical performance as a function of voltage is shown on the
following page.
7-128
20
20
100
C
BLOCK
IF OUTPUT
1
2
8
7
6
5
C
BLOCK
OPTIONAL LOW
FREQUENCIES
RF GROUND
V
cc
= 10 V
G (dB)
15
15
75
G
C
I
CC
50
PIN 3 IS ALSO
HEATSINK CONTACT
RF INPUT
C
BLOCK
4
C
BLOCK
LO INPUT
5
5
P
1dB
0
0
0
4
8
V
CC
(V)
12
16
20
0
25
Notes:
1. No external baluns are required.
2. Good heatsinking required on Pin 3 for
specified performance.
Figure 2. IAM-82008 Typical Biasing Configuration.
C
10
10
Figure 3. Typical Conversion Gain, IF
P
1 dB
, and I
CC
Current vs. V
CC
Bias
Voltage, T
A
= 25
°
C, RF: -20 dBm at 2
GHz, LO: 0 dBm at 1.75 GHz.
20
LO = 2 GHz
16
4:1
LO
IF
RF
20
15
80
G
C
15
IF P 1dB (dBm)
10
P
1dB
5
I
CC
70
3:1
G (dB)
G
C
(dB)
12
HIGH SIDE LO =
LOW SIDE LO =
8
IF
2:1
LO
C
10
60
5
4
0
50
RF
0
.01
0.1
IF FREQUENCY, RF-LO (GHz)
1.0
2.0
1:1
0.1
0
1.0
FREQUENCY (GHz)
10
-5
-55
40
-25
0
25
85
125
TEMPERATURE (°C)
Figure 4. Typical RF to IF Conversion
Gain vs. IF Frequency, T
A
= 25
°
C, V
CC
= 10 V, LO: 0 dBm at 2 GHz.
Figure 5. RF, LO, and IF Port VSWR
vs. Frequency, T
A
= 25
°
C, V
CC
= 10 V.
Figure 6. Typical Conversion Gain, IF
P
1 dB
, and I
CC
Current vs. Case
Temperature, T
A
= 25
°
C, V
CC
= 10 V,
RF: -20 dBm at 2 GHz, LO: 0 dBm at
1.75 GHz.
0
16
-10
RF TO IF (dBc)
LO TO RF AND IF (dBm)
LO to RF
-20
LO to IF
-30
14
G
C
(dB)
HARMONIC LO ORDER
0
1
2
3
4
5
–
12
6
24
22
41
0
21
0
22
18
33
36
1
40
51
41
40
52
55
2
73
60
>75
74
75
>75
3
>75
>75
>75
>75
>75
>75
4
>75
>75
>75
>75
>75
>75
5
-40
RF to IF
LO to IF
LO to RF
1.0
FREQUENCY (GHz)
RF to IF
12
-50
10
-10
-60
0.1
10
-5
0
LO POWER (dBm)
5
10
HARMONIC RF ORDER
Xmn = Pif – P(m*rf-n*lo)
Figure 7. Typical RF to IF Conversion
Gain vs. LO Power, T
A
= 25
°
C, V
CC
= 10
V, RF: -10 dBm at 2 GHz, LO: 0 dBm at
1.75 GHz.
Figure 8. Typical RF Feedthrough
Relative to IF Carrier, LO to RF and
LO to IF Leakage vs. Frequency, T
A
=
25
°
C, V
CC
= 10 V, RF: -20 dBm at
2 GHz, LO: 0 dBm at 1.75 GHz.
Figure 9. Harmonic Intermodulation
Suppression (dB Below Desired
Output) RF at 1 GHz, LO at 0.752
GHz, IF at 0.248 GHz.
7-129
I
CC
(mA)
VSWR
I
CC
(mA)
V
ee
= 0 V
3
C
BLOCK
OPTIONAL LOW
FREQUENCIES
LO GROUND
IF P 1dB, dBm
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