Silicon Bipolar MMIC 5 GHz
Active Double Balanced
Mixer/IF Amp
Technical Data
IAM-81008
Features
• RF-IF Conversion Gain
From 0.05– 5 GHz
• IF Conversion Gain From
DC to 1 GHz
• Low Power Dissipation:
65 mW at V
CC
= 5 V Typical
• Single Polarity Bias Supply:
V
CC
= 4 to 8 V
• Load-insensitive Performance
• Conversion Gain Flat Over
Temperature
• Low LO Power Requirements:
–5 dBm Typical
• Low Cost Plastic Surface
Mount Package
Typical applications include
frequency down conversion,
modulation, demodulation and
phase detection. Markets include
fiber-optics, GPS satelite navigation,
mobile radio, and battery powered
communications receivers.
The IAM series of Gilbert multiplier-
based frequency converters is
fabricated using HP’s 10 GHz, f
T
,
25 GHz f
MAX
ISOSAT™-I silicon
bipolar process. This process uses
nitride self alignment,
submicrometer lithography, trench
isolation, ion implantation, gold
metallization and polyimide inter-
metal dielectric and scratch protec-
tion to achieve excellent perfor-
mance, uniformity and reliability.
Plastic SO-8 Package
Pin Configuration
GROUND AND
THERMAL
1
CONTACT
V
CC1
GROUND
RF
IN
2
3
4
8
7
6
5
GROUND AND
THERMAL
CONTACT
RF
OUT
AND V
CC2
POWER CONTROL
Description
The IAM-81008 is a complete low
power consumption, double
balanced active mixer housed in a
miniature low cost plastic surface
mount package. It is designed for
narrow or wide bandwidth commer-
cial and industrial applications
having RF inputs up to 5 GHz.
Operation at RF and LO frequencies
less than 50 MHz can be achieved
using optional external capacitors
to ground. The IAM-81008 is
particularly well suited for applica-
tions that require load-insensitive
conversion and good spurious
signal suppression with minimum
LO and bias power consumption.
Typical Biasing Configuration and
Functional Block Diagram
C
block
IF Output
1
2
V
ee
= 0 V
3
4
C
block
C
block
8
7
6
5
C
block
LO Input
Note:
No external baluns are required.
Optional Low
LO Ground
Optional Low
Frequencies
RF Ground
V
CC
= 5 V
RF Input
7-119
5965-9107E
IAM-81008 Absolute Maximum Ratings
Parameter
Device Voltage
Power Dissipation
2,3
RF Input Power
LO Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
10 V
300 mW
+14 dBm
+14 dBm
150°C
–65 to 150°C
Thermal Resistance:
θ
jc
= 80°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 4.4 mW/°C for T
C
> 82°C.
IAM-81008 Part Number Ordering Information
Part Number
IAM-81008-TR1
Devices Per Reel
1000
Reel Size
7"
For more information, see “Tape and Reel Packaging for Semmiconductor Devices”.
IAM-81008 Electrical Specifications
[1]
, T
A
= 25°C
Symbol
Parameters and Test Conditions: V
cc
= 5 V, Z
O
= 50
Ω,
LO =–5 dBm, RF = –20 dBm
Units
Min.
Typ.
Max.
G
C
F
3 dB
RF
F
3 dB
IF
P
1 dB
IP
3
NF
VSWR
RF
if
LO
if
LO
rf
I
CC
Conversion Gain
RF Bandwidth (G
C
3 dB Down)
IF Bandwidth (G
C
3 dB Down)
IF Output Power at 1 dB Gain Compression
IF Output Third Order Intercept Point
SSB Noise Figure
RF Port VSWR
LO Port VSWR
IF Port VSWR
RF Feedthrough at IF Port
LO Leakage at IF Port
LO Leakage at RF Port
Supply Current
RF = 2 GHz, LO = 1.75 GHz
IF = 250 MHz
LO = 2 GHz
RF = 2 GHz, LO = 1.75 GHz
RF = 2 GHz, LO = 1.75 GHz
RF = 2 GHz, LO = 1.75 GHz
f = 0.05 to 3.5 GHz
f = 0.05 to 3.5 GHz
f < 1 GHz
RF = 2 GHz, LO = 1.75 GHz
LO = 1.75 GHz
LO = 1.75 GHz
dB
GHz
GHz
dBm
dBm
dB
6.0
8.5
3.5
0.6
–6
3
17
1.5:1
2.0:1
1.5:1
10
dBc
dBm
dBm
mA
10
–25
–25
–30
13
16
Note:
1. The recommended operating voltage range for this device is 4 to 8 V. Typical performance as a function of voltage is on
the following page.
7-120
IAM-81008 Typical Performance, T
A
= 25°C, V
CC
= 5 V
RF: –20 dBm at 2 GHz, LO: –5 dBm at 1.75 GHz
(unless otherwise noted)
15
5
30
15
5
20
I
CC
IF P
1 dB
(dBm)
IF P
1 dB
(dBm)
G
C
20
I
CC
(mA)
10
G
C
(dB)
0
G
C
–5
10
G
C
(dB)
0
I
CC
–5
P
1 dB
15
I
CC
(mA)
5
10
5
10
P
1 dB
0
–10
0
2
4
6
8
V
CC
(V)
0
10
0
–10
–55
–25
+25
+85
5
+125
TEMPERATURE (°C)
Figure 1. Conversion Gain, IF P
1 dB
and I
CC
Current vs. V
CC
Bias Voltage.
10
4:1
RF
LO
IF
3:1
Figure 2. Conversion Gain, IF P
1 dB
and I
CC
Current vs. Case Temperature.
10
IF = 70 MHz
5
G
C
(dB)
VSWR
8
G
C
(dB)
6
4
0
IF = 1 GHz
2:1
2
–5
0.1
0.2
0.5
1.0
2.0
5.0
10
RF FREQUENCY (GHz)
1:1
0.1
1.0
FREQUENCY (GHz)
10
0
–15
–10
–5
0
5
LO POWER (dBm)
Figure 3. Typical RF to IF Conversion
Gain vs. RF Frequency, T
A
= 25°C
(Low Side LO).
10
LO = 2 GHz
RF to IF (dBc)
LO to RF and IF (dBm)
Figure 4. RF, LO and IF Port VSWR
vs. Frequency.
Figure 5. RF to IF Conversion Gain
vs. LO Power.
0
RF to IF
LO to IF
LO to RF
0
HARMONIC LO ORDER
—
18
16
42
29
45
0
21
0
35
20
44
36
1
35
45
42
44
52
57
2
74
48
72
59
64
64
3
>75
>75
>75
>75
>75
>75
4
>75
>75
>75
>75
>75
>75
5
8
6
G
C
(dB)
–10
1
2
3
4
5
4
2
0
–2
0.01
High Side LO
Low Side LO
0.1
FREQUENCY, RF–LO (GHz)
1.0 2.0
–20
–30
–40
0.1
1.0
FREQUENCY (GHz)
10
Figure 6. RF to IF Conversion Gain
vs. IF Frequency.
Figure 7. RF Feedthrough Relative to
IF Carrier, dBm LO to RF and IF
Leakage vs. Frequency.
HARMONIC RF ORDER
Xmn = Pif – P(m*rf – n*lo)
Figure 8. Harmonic Intermodulation
Suppression (dB Below Desired Output)
RF at 1 GHz, LO at 0.752 GHz, IF at 0.248 GHz.
7-121
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