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HGTP12N60A4, HGTG12N60A4,
HGT1S12N60A4S9A
Data Sheet
August 2003
600V, SMPS Series N-Channel IGBTs
The HGTP12N60A4, HGTG12N60A4 and
HGT1S12N60A4S9A are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150
o
C.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49335.
Features
• >100kHz Operation at 390V, 12A
• 200kHz Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T
J
= 125
o
C
• Low Conduction Loss
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC TO-220AB ALTERNATE VERSION
BRAND
Ordering Information
PART NUMBER
HGTP12N60A4
HGTG12N60A4
HGT1S12N60A4S9A
PACKAGE
TO-220AB
TO-247
TO-263AB
12N60A4
12N60A4
12N60A4
COLLECTOR
(FLANGE)
E
C
G
NOTE: When ordering, use the entire part number.
Symbol
C
JEDEC TO-263AB
G
G
E
COLLECTOR
(FLANGE)
JEDEC STYLE TO-247
E
E
C
G
COLLECTOR
(BOTTOM SIDE METAL)
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2003 Fairchild Semiconductor Corporation
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG12N60A4, HGTP12N60A4,
HGT1S12N60A4S9A
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GEM
Switching Safe Operating Area at T
J
= 150
o
C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
54
23
96
±20
±30
60A at 600V
167
1.33
-55 to 150
300
260
W
W/
o
C
o
C
o
C
o
C
UNITS
V
A
A
A
V
V
600
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
PARAMETER
T
J
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
BV
ECS
I
CES
TEST CONDITIONS
I
C
= 250µA, V
GE
= 0V
I
C
= -10mA, V
GE
= 0V
V
CE
= 600V
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 125
o
C
MIN
600
20
-
-
-
-
-
-
60
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
2.0
1.6
5.6
-
-
8
78
97
17
8
96
18
55
160
50
MAX
-
-
250
2.0
2.7
2.0
-
±250
-
-
96
120
-
-
-
-
-
-
-
UNITS
V
V
µA
mA
V
V
V
nA
A
V
nC
nC
ns
ns
ns
ns
µJ
µJ
µJ
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 12A,
V
GE
= 15V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
GE(TH)
I
GES
SSOA
V
GEP
Q
g(ON)
I
C
= 250µA, V
CE
= 600V
V
GE
=
±20V
T
J
= 150
o
C, R
G
= 10Ω, V
GE
= 15V
L = 100µH, V
CE
= 600V
I
C
= 12A, V
CE
= 300V
I
C
= 12A,
V
CE
= 300V
V
GE
= 15V
V
GE
= 20V
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
IGBT and Diode at T
J
= 25
o
C
I
CE
= 12A
V
CE
= 390V
V
GE
=15V
R
G
= 10Ω
L = 500µH
Test Circuit (Figure 20)
©2003 Fairchild Semiconductor Corporation
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
Electrical Specifications
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Thermal Resistance Junction To Case
NOTES:
2. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 20.
T
J
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
R
θJC
TEST CONDITIONS
IGBT and Diode at T
J
= 125
o
C
I
CE
= 12A
V
CE
= 390V
V
GE
= 15V
R
G
= 10Ω
L = 500µH
Test Circuit (Figure 20)
MIN
-
-
-
-
-
-
-
-
TYP
17
16
110
70
55
250
175
-
MAX
-
-
170
95
-
350
285
0.75
UNITS
ns
ns
ns
ns
µJ
µJ
µJ
o
C/W
Typical Performance Curves
60
I
CE
, DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
70
60
50
40
30
20
10
0
0
100
200
300
400
500
600
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
V
GE
= 15V
50
40
30
20
10
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
T
J
= 150
o
C, R
G
= 10Ω, V
GE
= 15V, L = 200µH
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
500
f
MAX
, OPERATING FREQUENCY (kHz)
300
T
C
75
o
C
V
GE
15V
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
20
18
16
14
12
10
8
6
4
2
0
9
V
CE
= 390V, R
G
= 10Ω, T
J
= 125
o
C
300
275
250
I
SC
225
200
175
150
t
SC
125
100
75
100
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
ØJC
= 0.75
o
C/W, SEE NOTES
T
J
= 125
o
C, R
G
= 10Ω, L = 500µH, V
CE
= 390V
10
1
3
10
20
30
10
11
12
13
14
15
50
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2003 Fairchild Semiconductor Corporation
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
Typical Performance Curves
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
24
DUTY CYCLE < 0.5%, V
GE
= 12V
PULSE DURATION = 250µs
20
16
T
J
= 150
o
C
12
T
J
= 125
o
C
8
T
J
= 25
o
C
4
0
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
24
20
16
12
8
4
0
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250µs
T
J
= 150
o
C
T
J
= 125
o
C
T
J
= 25
o
C
0
0.5
1.0
1.5
2
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
2.5
0
0.5
1.0
1.5
2
2.5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
700
E
ON2
, TURN-ON ENERGY LOSS (µJ)
600
500
400
300
200
100
0
E
OFF
, TURN-OFF ENERGY LOSS (µJ)
R
G
= 10Ω, L = 500µH, V
CE
= 390V
400
R
G
= 10Ω, L = 500µH, V
CE
= 390V
350
300
250
200
150
100
50
0
2
4
6
8
10
12
T
J
= 25
o
C, V
GE
= 12V OR 15V
14
16
18
20
22
24
T
J
= 125
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
2
4
6
8
10 12 14 16 18 20 22
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
24
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs
COLLECTOR TO EMITTER CURRENT
18
t
d(ON)I
, TURN-ON DELAY TIME (ns)
17
R
G
= 10Ω, L = 500µH, V
CE
= 390V
32
R
G
= 10Ω, L = 500µH, V
CE
= 390V
28
t
rI
, RISE TIME (ns)
24
20
16
12
8
T
J
= 125
o
C, OR T
J
= 25
o
C, V
GE
= 12V
16
15
14
13
12
11
10
2
4
6
8
10
12
14
16
18
20
22
24
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 12V
4
0
2
4
6
8
T
J
= 25
o
C OR T
J
= 125
o
C, V
GE
= 15V
10
12
14
16
18
20
22
24
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
©2003 Fairchild Semiconductor Corporation
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
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