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FMB1020L99Z: 产品描述Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SUPERSOT-6; 产品类别分立半导体晶体管; 文件大小28KB，共2页; 制造商Fairchild; 官网地址http://www.fairchildsemi.com/

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FMB1020L99Z概述

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SUPERSOT-6

FMB1020L99Z规格参数

参数名称	属性值
厂商名称	Fairchild
包装说明	SMALL OUTLINE, R-PDSO-G6
针数	6
Reach Compliance Code	unknown
ECCN代码	EAR99
最大集电极电流 (IC)	0.5 A
集电极-发射极最大电压	45 V
配置	SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)	100
JESD-30 代码	R-PDSO-G6
元件数量	2
端子数量	6
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	NPN AND PNP
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	300 MHz
Base Number Matches	1

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FMB1020

Discrete Power

Signal Technologies

FMB1020

Package: SuperSOT-6

Device Marking:

.004

Note: The "

" (dot) signifies Pin 1

Transistor 1 is NPN device,

transistor 2 is PNP device.

NPN & PNP Complementary Dual Transistor

SuperSOT-6 Surface Mount Package

This dual complementary device was designed for use as a general purpose amplifier applications at

collector currents to 300mA. Sourced from Process 10 (NPN ) and Process 68 (PNP).

Absolute Maximum Ratings*

Symbol

CEO

CBO

EBO

STG

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

= 25°C unless otherwise noted

Value

500

-55 to +150

Units

°C

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

θJA

= 25°C unless otherwise noted

Characteristics

Total Device Dissipation, total

per side

Thermal Resistance, Junction to Ambient, total

Max

700

350

180

Units

°C/W

1998 Fairchild Semiconductor Corporation

Page 1 of 2

fmb1020.lwpPr10&68(Y4)

FMB1020L99Z相似产品对比

	FMB1020L99Z	FMB1020S62Z	FMB1020D84Z
描述	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SUPERSOT-6	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SUPERSOT-6	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SUPERSOT-6
厂商名称	Fairchild	Fairchild	Fairchild
包装说明	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6
针数	6	6	6
Reach Compliance Code	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99
最大集电极电流 (IC)	0.5 A	0.5 A	0.5 A
集电极-发射极最大电压	45 V	45 V	45 V
配置	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)	100	100	100
JESD-30 代码	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6
元件数量	2	2	2
端子数量	6	6	6
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	NPN AND PNP	NPN AND PNP	NPN AND PNP
认证状态	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON
标称过渡频率 (fT)	300 MHz	300 MHz	300 MHz
Base Number Matches	1	1	1

FMB1020L99Z

FMB1020L99Z概述

FMB1020L99Z规格参数

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FMB1020L99Z相似产品对比

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