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SX5819UR-1

产品描述Rectifier Diode, Schottky, 1 Element, 1A, 45V V(RRM), Silicon, DO-213AB, HERMETIC SEALED, MELF-2
产品类别分立半导体    二极管   
文件大小163KB,共3页
制造商SENSITRON
官网地址http://www.sensitron.com/
下载文档 详细参数 选型对比 全文预览

SX5819UR-1概述

Rectifier Diode, Schottky, 1 Element, 1A, 45V V(RRM), Silicon, DO-213AB, HERMETIC SEALED, MELF-2

SX5819UR-1规格参数

参数名称属性值
包装说明HERMETIC SEALED, MELF-2
Reach Compliance Codecompliant
ECCN代码EAR99
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JEDEC-95代码DO-213AB
JESD-30 代码O-LELF-R2
元件数量1
端子数量2
最高工作温度125 °C
最低工作温度-55 °C
最大输出电流1 A
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
最大重复峰值反向电压45 V
表面贴装YES
技术SCHOTTKY
端子形式WRAP AROUND
端子位置END
Base Number Matches1

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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 193, REV. C.2
1N5819-1 and 1N5819UR-1
Standard
HERMETIC AXIAL LEAD / MELF
SCHOTTKY BARRIER DIODE
A
VAILABLE AS
1N5819-1, 1N5819UR-1
JAN EQUIVALENT:
SJ5819-1/SJ5819UR-1*
SV5819-1/SV5819UR-1*
SX5819-1/SX5819UR-1*
SS5819-1/SS5819UR-1*
HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE
DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE.
MAXIMUM RATINGS
RATING
Peak Inverse Voltage
(PIV)
Average DC Output
Current (I
o
)
Peak Single Cycle Surge
Current (I
fsm
)
Thermal Resistance (
JL
)
Thermal Resistance (
JEC
)
Junction Temperature (T
J
)
Operating Temperature
(T
op)
Storage Temp. (T
stg
)
t
p
= 8.3 ms Single Half Cycle Sine
Wave, Superimposed On Rated Load
Junction to Lead
d = 0.375”
Junction to Endcap
-
-
-
CONDITIONS
All ratings are at T
A
= 25 C unless otherwise specified.
MIN
-
-
-
-
-
-55
-55
-55
TYP
-
-
-
-
-
-
-
-
MAX
45
1.0
25
70
40
+125
+125
+150
UNIT
Vdc
Amps
Amps(pk)
C/W
C/W
C
C
C
o
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
Maximum Forward
Voltage (V
f
)
Maximum Instantaneous
Reverse Current At Rated
(PIV)
Junction Capacitance (C
J
)
CONDITIONS
I
F
= 1.0A (300
sec
pulse, duty cycle
< 2%)
T
A
= 25 C
T
A
= 100 C
V
R
= 5 Vdc
0.01
f
1MHz
V
sig
= 15 mV p-p
MIN
-
-
TYP
-
-
MAX
0.49
0.05
4.0
UNIT
Volts
Amps
mAmps
-
-
70
pF
Notes:
- All ratings are at TA = 25C unless otherwise specified.
- Maximum storage temperature range: -55C to +150C.
- Maximum operating temperature range: -55C to +125C (1N5819-1, 1N5819UR-1).
Derate linearly at 4.5 V/C above TL or TEC = +100C (1N5819-1), where TEC is at L = .375 inch.
Derate linearly at 14 mA/C above TL or TEC = +55C (1N5819-1), where TEC is at L = .375 inch.
*Sensitron space equivalent diodes are manufactured and screened to MIL-PRF-19500 flow and guidelines starting
from wafer fabrication through assembly and testing using our internal specification.
©2013 Sensitron Semiconductor
221 West Industry Court
Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798
www.sensitron.com
sales@sensitron.com

SX5819UR-1相似产品对比

SX5819UR-1 SV5819UR-1 SJ5819UR-1 RNC65K2183DPB1465 SV5819-1 SX5819-1
描述 Rectifier Diode, Schottky, 1 Element, 1A, 45V V(RRM), Silicon, DO-213AB, HERMETIC SEALED, MELF-2 Rectifier Diode, Schottky, 1 Element, 1A, 45V V(RRM), Silicon, DO-213AB, HERMETIC SEALED, MELF-2 Rectifier Diode, Schottky, 1 Element, 1A, 45V V(RRM), Silicon, DO-213AB, HERMETIC SEALED, MELF-2 Fixed Resistor, Metal Film, 0.25W, 218000ohm, 300V, 0.5% +/-Tol, 100ppm/Cel, Through Hole Mount, AXIAL LEADED Rectifier Diode, Schottky, 1 Element, 1A, 45V V(RRM), Silicon, DO-41, HERMETIC SEALED PACKAGE-2 Rectifier Diode, Schottky, 1 Element, 1A, 45V V(RRM), Silicon, DO-41, HERMETIC SEALED PACKAGE-2
包装说明 HERMETIC SEALED, MELF-2 O-LELF-R2 HERMETIC SEALED, MELF-2 AXIAL LEADED O-XALF-W2 O-XALF-W2
Reach Compliance Code compliant compliant compliant not_compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
端子数量 2 2 2 2 2 2
最高工作温度 125 °C 125 °C 125 °C 175 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C -65 °C -55 °C -55 °C
封装形式 LONG FORM LONG FORM LONG FORM Axial LONG FORM LONG FORM
表面贴装 YES YES YES NO NO NO
技术 SCHOTTKY SCHOTTKY SCHOTTKY METAL FILM SCHOTTKY SCHOTTKY
外壳连接 ISOLATED ISOLATED ISOLATED - ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE - SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON - SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95代码 DO-213AB DO-213AB DO-213AB - DO-41 DO-41
JESD-30 代码 O-LELF-R2 O-LELF-R2 O-LELF-R2 - O-XALF-W2 O-XALF-W2
元件数量 1 1 1 - 1 1
最大输出电流 1 A 1 A 1 A - 1 A 1 A
封装主体材料 GLASS GLASS GLASS - UNSPECIFIED UNSPECIFIED
封装形状 ROUND ROUND ROUND - ROUND ROUND
最大重复峰值反向电压 45 V 45 V 45 V - 45 V 45 V
端子形式 WRAP AROUND WRAP AROUND WRAP AROUND - WIRE WIRE
端子位置 END END END - AXIAL AXIAL
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