D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec
MICROCIRCUIT DATA SHEET
MNLM113-X REV 1C1
REFERENCE DIODE
General Description
The LM113 is a temperature compensated, low voltage reference diode. It features
extremely-tight regulation over a wide range of operating currents in addition to an
unusually-low breakdown voltage and good temperature stability.
The diode is synthesized using transistors and resistors in a monolithic integrated
circuit. As such, it has the same low noise and long term stability as modern IC op amps.
Further, output voltage of the reference depends only on highly-predictable properties of
components in the IC; so they can be manufactured and supplied to tight tolerances.
The characteristics of this reference recommend it for use in bias-regulation circuitry,
in low-voltage power supplies or in battery powered equipment. The fact that the breakdown
voltage is equal to a physical property of silicon-the energy-band gap voltage-makes it
useful for many temperature-compensation and temperature-measurement functions.
Original Creation Date: 06/30/95
Last Update Date: 06/03/02
Last Major Revision Date: 11/07/96
Industry Part Number
LM113
NS Part Numbers
LM113H-QMLV
LM113H-SMD
LM113WG-QMLV
LM113WG-SMD
Prime Die
LM113
Controlling Document
SEE FEATURES SECTION
Processing
MIL-STD-883, Method 5004
Subgrp Description
1
2
3
4
5
6
7
8A
8B
9
10
11
Static tests at
Static tests at
Static tests at
Dynamic tests at
Dynamic tests at
Dynamic tests at
Functional tests at
Functional tests at
Functional tests at
Switching tests at
Switching tests at
Switching tests at
Temp (
o
C)
+25
+125
-55
+25
+125
-55
+25
+125
-55
+25
+125
-55
Quality Conformance Inspection
MIL-STD-883, Method 5005
1
MNLM113-X REV 1C1
MICROCIRCUIT DATA SHEET
Features
- Low breakdown voltage:
1.220V
- Dynamic impedance of 0.3 Ohms from 500uA to 20mA
- Temperature stability typically 1% over -55 C to 125 C range
CONTROLLING DOCUMENTS:
LM113H-QMLV
LM113H-SMD
LM113WG-QMLV
LM113WG-SMD
5962-9684301VXA
5962-8671101XA
5962-9684301VZA
5962-8671101ZA
2
MNLM113-X REV 1C1
MICROCIRCUIT DATA SHEET
(Absolute Maximum Ratings)
(Note 1)
Power Dissipation
100mW
Reverse Current
50mA
Forward Current
50mA
Storage Temperature Range
-65 C < Ta < +150 C
Lead Temperature
(Soldering, 10 seconds)
Operating Temperature Range
Maximum Junction Temperature
+150 C
Thermal Resistance
ThetaJA
Metal Can
(Still Air)
(500LF/Min Air Flow)
CERAMIC SOIC (Still Air)
(500LF/Min Air Flow)
ThetaJC
Metal Can
CERAMIC SOIC
ESD Tolerance
(Note 3)
300 C
-55 C < Ta < + 125C
440 C/W
TBD
218 C/W
140 C/W
80 C/W
27 C/W
4000V
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Operating Ratings indicate conditions for which the device is functional, but do not
guarantee specific performance limits. For guaranteed specifications and test
conditions, see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed. Some performance characteristics may degrade
when the device is not operated under the listed test conditions.
The maximum power dissipation must be derated at elevated temperatures and is
dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to
ambient thermal resistance), and TA (ambient temperature). The maximum allowable
power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number
given in the Absolute Maximum Ratings, whichever is lower.
Human body model, 1.5K Ohms in series with 100pF.
Note 2:
Note 3:
3
MNLM113-X REV 1C1
MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS
SYMBOL
Vzr
PARAMETER
Zener Voltage
Ir = 1 mA
CONDITIONS
NOTES
PIN-
NAME
MIN
1.16
1.157
Delta Vzr
Delta Zener
Voltage
Forward Voltage
Drop
Reverse Dynamic
Impedance
0.5mA <= Ir <= 20mA
0.5mA <= Ir <= 10mA
Vf
Rr
If = 1mA
Ir = 1mA
Ir = 10mA
1
1
MAX
1.28
1.283
15
15
1
1
0.8
UNIT
V
V
mV
mV
V
Ohm
Ohm
SUB-
GROUPS
1
2, 3
1
2, 3
1, 2,
3
4
4
DC PARAMETERS: DRIFT VALUES
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: Delta calculations performed on JAN S and QMLV devices at Group B, Subgroup 5 "ONLY".
Vzr
Zener Voltage
Note 1:
Ir = 1mA
-0.02
0.02
V
1
Guaranteed parameter not tested.
4