TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, 4 PIN, BIP General Purpose Small Signal
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | NXP(恩智浦) |
| 包装说明 | PLASTIC PACKAGE-4 |
| 针数 | 4 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 外壳连接 | COLLECTOR |
| 最大集电极电流 (IC) | 0.1 A |
| 集电极-发射极最大电压 | 30 V |
| 配置 | CURRENT MIRROR |
| 最小直流电流增益 (hFE) | 100 |
| JESD-30 代码 | R-PDSO-G4 |
| JESD-609代码 | e3 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 4 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度(摄氏度) | 260 |
| 极性/信道类型 | PNP |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | TIN |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 30 |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 100 MHz |
| Base Number Matches | 1 |

| 933677230215 | 933677230235 | 933792130215 | 933792150215 | 933792140215 | 933792140235 | |
|---|---|---|---|---|---|---|
| 描述 | TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, 4 PIN, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, 4 PIN, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, 4 PIN, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, 4 PIN, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, 4 PIN, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, 4 PIN, BIP General Purpose Small Signal |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
| 包装说明 | PLASTIC PACKAGE-4 | SMALL OUTLINE, R-PDSO-G4 | PLASTIC PACKAGE-4 | SMALL OUTLINE, R-PDSO-G4 | PLASTIC PACKAGE-4 | SMALL OUTLINE, R-PDSO-G4 |
| 针数 | 4 | 4 | 4 | 4 | 4 | 4 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 外壳连接 | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
| 最大集电极电流 (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
| 集电极-发射极最大电压 | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V |
| 配置 | CURRENT MIRROR | CURRENT MIRROR | CURRENT MIRROR | CURRENT MIRROR | CURRENT MIRROR | CURRENT MIRROR |
| 最小直流电流增益 (hFE) | 100 | 100 | 100 | 420 | 220 | 220 |
| JESD-30 代码 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 |
| JESD-609代码 | e3 | e3 | e3 | e3 | e3 | e3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 4 | 4 | 4 | 4 | 4 | 4 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度(摄氏度) | 260 | 260 | 260 | 260 | 260 | 260 |
| 极性/信道类型 | PNP | PNP | PNP | PNP | PNP | PNP |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 端子面层 | TIN | TIN | TIN | TIN | TIN | TIN |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | 30 | 40 | 30 | 40 | 30 | 40 |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
| 厂商名称 | NXP(恩智浦) | - | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) | - |
| 其他特性 | - | - | FOR TRANSISTOR2 HFE IS 125 | FOR TRANSISTOR2 HFE IS 420 | FOR TRANSISTOR2 HFE IS 220 | FOR TRANSISTOR2 HFE IS 220 |
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