HYB39S64400/800/160AT(L)
64MBit Synchronous DRAM
64 MBit Synchronous DRAM
•
High Performance:
-8
fCK
max.
tCK3
tAC3
tCK2
tAC2
125
8
6
10
6
-8B
100
10
6
12
7
-10
100
10
7
15
8
Units
MHz
ns
ns
ns
ns
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Multiple Burst Read with Single Write
Operation
Automatic
Command
and
Controlled
Precharge
Data Mask for Read / Write control (x4, x8)
Data Mask for byte control (x16)
Auto Refresh (CBR) and Self Refresh
Suspend Mode and Power Down Mode
4096 refresh cycles / 64 ms
Random Column Address every CLK
( 1-N Rule)
Single 3.3V +/- 0.3V Power Supply
LVTTL Interface version
Plastic Packages:
P-TSOPII-54 400mil width (x4, x8, x16)
-8 version for PC100 2-2-2 applications
-8B version for PC100 3-2-3 applications
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Fully Synchronous to Positive Clock Edge
0 to 70
°C
operating temperature
Four Banks controlled by BA0 & BA1
Programmable CAS Latency: 2 & 3
Programmable Wrap Sequence: Sequential
or Interleave
Programmable Burst Length: 1, 2, 4, 8
full page (optional) for sequential wrap
around
The HYB39S64400/800/160AT are four bank Synchronous DRAM’s organized as 4 banks x 4MBit
x4, 4 banks x 2MBit x8 and 4 banks x 1Mbit x16 respectively. These synchronous devices achieve
high speed data transfer rates by employing a chip architecture that prefetches multiple bits and
then synchronizes the output data to a system clock. The chip is fabricated with SIEMENS’
advanced quarter micron 64MBit DRAM process technology.
The device is designed to comply with all JEDEC standards set for synchronous DRAM products,
both electrically and mechanically. All of the control, address, data input and output circuits are
synchronized with the positive edge of an externally supplied clock.
Operating the four memory banks in an interleave fashion allows random access operation to occur
at higher rate than is possible with standard DRAMs. A sequential and gapless data rate is possible
depending on burst length, CAS latency and speed grade of the device.
Auto Refresh (CBR) and Self Refresh operation are supported. These devices operates with a
single 3.3V +/- 0.3V power supply and are available in TSOPII packages.
The -8 version of this product is best suited for use on a 100 Mhz bus for both CAS latencies 2 & 3.
Semiconductor Group
1
10.98
HYB39S64400/800/160AT(L)
64MBit Synchronous DRAM
Ordering Information
Type
Ordering Code
Package
Description
LVTTL-version:
HYB 39S64400AT-8
HYB 39S64400AT-8B
HYB 39S64400AT-10
HYB 39S64800AT-8
HYB 39S64800AT-8B
HYB 39S64800AT-10
HYB 39S64160AT-8
HYB 39S64160AT-8B
HYB 39S64160AT-10
HYB 39S64xxx0ATL-8/-10
P-TSOP-54-2 (400mil)
P-TSOP-54-2 (400mil)
P-TSOP-54-2 (400mil)
P-TSOP-54-2 (400mil)
P-TSOP-54-2 (400mil)
P-TSOP-54-2 (400mil)
P-TSOP-54-2 (400mil)
P-TSOP-54-2 (400mil)
P-TSOP-54-2 (400mil)
P-TSOP-54-2 (400mil)
4B x 4M x 4 SDRAM PC100-222
4B x 4M x 4 SDRAM PC100-323
4B x 4M x 4 SDRAM PC66-222
4B x 2M x 8 SDRAM PC100-222
4B x 2M x 8 SDRAM PC100-323
4B x 2M x 8 SDRAM PC66-222
4B x 1M x 16 SDRAM PC100-222
4B x 1M x 16 SDRAM PC100-323
4B x 1M x 16 SDRAM PC66-222
Low Power (L-versions)
Pin Description and Pinouts:
CLK
CKE
CS
RAS
CAS
WE
A0-A11
BA0, BA1
Clock Input
Clock Enable
Chip Select
Row Address Strobe
Column Address Strobe
Write Enable
Address Inputs
Bank Select
DQ
DQM, LDQM, UDQM
Vdd
Vss
Vddq
Vssq
NC
Data Input /Output
Data Mask
Power (+3.3V)
Ground
Power for DQ’s (+ 3.3V)
Ground for DQ’s
not connected
Semiconductor Group
2
微控制器 MCU
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