FCT SERIES, 8-BIT DRIVER, TRUE OUTPUT, CDFP20, CERAMIC, FP-20
| 参数名称 | 属性值 |
| 包装说明 | DFP, FL20,.3 |
| Reach Compliance Code | unknown |
| 其他特性 | BROADSIDE VERSION OF 373 |
| 系列 | FCT |
| JESD-30 代码 | R-GDFP-F20 |
| JESD-609代码 | e0 |
| 负载电容（CL） | 50 pF |
| 逻辑集成电路类型 | BUS DRIVER |
| 最大I（ol） | 0.032 A |
| 位数 | 8 |
| 功能数量 | 1 |
| 端口数量 | 2 |
| 端子数量 | 20 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 输出特性 | 3-STATE |
| 输出极性 | TRUE |
| 封装主体材料 | CERAMIC, GLASS-SEALED |
| 封装代码 | DFP |
| 封装等效代码 | FL20,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLATPACK |
| 电源 | 5 V |
| Prop。Delay @ Nom-Sup | 8.5 ns |
| 传播延迟（tpd） | 15 ns |
| 认证状态 | Not Qualified |
| 筛选级别 | MIL-STD-883 |
| 座面最大高度 | 2.286 mm |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | TIN LEAD |
| 端子形式 | FLAT |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| 宽度 | 6.731 mm |
| Base Number Matches | 1 |
| 5962-8863901SA | 5962-88639012A | 5962-8863901RA | 54FCT573MW8 | |
|---|---|---|---|---|
| 描述 | FCT SERIES, 8-BIT DRIVER, TRUE OUTPUT, CDFP20, CERAMIC, FP-20 | FCT SERIES, 8-BIT DRIVER, TRUE OUTPUT, CQCC20, CERAMIC, LCC-20 | FCT SERIES, 8-BIT DRIVER, TRUE OUTPUT, CDIP20, CERAMIC, DIP-20 | FCT SERIES, 8-BIT DRIVER, TRUE OUTPUT, UUC, WAFER |
| 包装说明 | DFP, FL20,.3 | QCCN, LCC20,.35SQ | DIP, DIP20,.3 | DIE, |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| 系列 | FCT | FCT | FCT | FCT |
| JESD-30 代码 | R-GDFP-F20 | S-CQCC-N20 | R-GDIP-T20 | X-XUUC-N |
| 逻辑集成电路类型 | BUS DRIVER | BUS DRIVER | BUS DRIVER | BUS DRIVER |
| 位数 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 |
| 端口数量 | 2 | 2 | 2 | 2 |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 输出极性 | TRUE | TRUE | TRUE | TRUE |
| 封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | UNSPECIFIED |
| 封装代码 | DFP | QCCN | DIP | DIE |
| 封装形状 | RECTANGULAR | SQUARE | RECTANGULAR | UNSPECIFIED |
| 封装形式 | FLATPACK | CHIP CARRIER | IN-LINE | UNCASED CHIP |
| 传播延迟（tpd） | 15 ns | 15 ns | 15 ns | 15 ns |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | YES | NO | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子形式 | FLAT | NO LEAD | THROUGH-HOLE | NO LEAD |
| 端子位置 | DUAL | QUAD | DUAL | UPPER |
| 其他特性 | BROADSIDE VERSION OF 373 | BROADSIDE VERSION OF 373 | BROADSIDE VERSION OF 373 | - |
| JESD-609代码 | e0 | e0 | e0 | - |
| 负载电容（CL） | 50 pF | 50 pF | 50 pF | - |
| 最大I（ol） | 0.032 A | 0.032 A | 0.032 A | - |
| 端子数量 | 20 | 20 | 20 | - |
| 封装等效代码 | FL20,.3 | LCC20,.35SQ | DIP20,.3 | - |
| 电源 | 5 V | 5 V | 5 V | - |
| Prop。Delay @ Nom-Sup | 8.5 ns | 8.5 ns | 8.5 ns | - |
| 筛选级别 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | - |
| 座面最大高度 | 2.286 mm | 1.905 mm | 5.08 mm | - |
| 端子面层 | TIN LEAD | Tin/Lead (Sn/Pb) - hot dipped | TIN LEAD | - |
| 端子节距 | 1.27 mm | 1.27 mm | 2.54 mm | - |
| 宽度 | 6.731 mm | 8.89 mm | 7.62 mm | - |
| Base Number Matches | 1 | 1 | 1 | - |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
