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5962-0622901QXC: 产品描述Standard SRAM, 512KX32, 25ns, CMOS, CQFP68; 产品类别存储存储; 文件大小371KB，共16页; 制造商Microchip(微芯科技); 官网地址https://www.microchip.com

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5962-0622901QXC概述

Standard SRAM, 512KX32, 25ns, CMOS, CQFP68

5962-0622901QXC规格参数

参数名称	属性值
厂商名称	Microchip(微芯科技)
包装说明	QFF,
Reach Compliance Code	compliant
ECCN代码	3A001.A.2.C
最长访问时间	25 ns
其他特性	IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO
JESD-30 代码	S-CQFP-F68
JESD-609代码	e4
长度	24.14 mm
内存密度	16777216 bit
内存集成电路类型	STANDARD SRAM
内存宽度	32
功能数量	1
端子数量	68
字数	524288 words
字数代码	512000
工作模式	ASYNCHRONOUS
最高工作温度	125 °C
最低工作温度	-55 °C
组织	512KX32
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装代码	QFF
封装形状	SQUARE
封装形式	FLATPACK
并行/串行	PARALLEL
认证状态	Qualified
筛选级别	MIL-PRF-38535 Class Q
座面最大高度	4.7 mm
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	MILITARY
端子面层	GOLD
端子形式	FLAT
端子节距	1.27 mm
端子位置	QUAD
宽度	24.14 mm
Base Number Matches	1

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Features

•

16 Mbit SRAM Multi Chip Module

Allows 32-, 16- or 8-bit access configuration

Operating Voltage: 3.3V

0.3V, 5V Tolerant

Access Time:

– 25 ns, 20 ns

– 18 ns (preliminary information)

Very Low Power Consumption

– Active: 595 mW per byte (Max) @ 20 ns

(1)

, 415mW per byte (Max) @ 50ns

(2)

– Standby: 15 mW (Typ)

Military Temperature Range: -55 to +125°C

TTL-Compatible Inputs and Outputs

Asynchronous

Die manufactured on Atmel 0.25 µm Radiation Hardened Process

No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm

Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019

ESD Better than 2000V

Quality Grades:

– QML-Q or V with SMD 5962-06229

– ESCC

950 Mils Wide MQFPT68 Package

Mass : 8.5 grams

1. For AT68166FT-20 only. 540mW for AT68166FT-25.

2. For AT68166FT-20 only. 450mW for AT68166FT-25.

Rad Hard

16 MegaBit 3.3V

5V Tolerant

SRAM Multi-

Chip Module

AT68166FT

Notes:

Description

The AT68166FT is a 16Mbit SRAM packaged in a hermetic Multi Chip Module (MCM)

for space applications.

The AT68166FT MCM incorporates four 4Mbit AT60142FT SRAM dice. It can be orga-

nized as either one bank of 512Kx8, two banks of 512Kx16 or four banks of 512Kx8. It

combines rad-hard capabilities, a latch-up threshold of 80MeV.cm²/mg, a Multiple Bit

Upset immunity and a total dose tolerance of 300Krads, with a fast access time.

The MCM packaging technology allows a reduction of the PCB area by 50% with a

weight savings of 75% compared to four 4Mbit packages.

Thanks to the small size of the 4Mbit SRAM die, Atmel has been able to accommo-

date the assembly of the four dice on one side of the package which facilitates the

power dissipation.

The compatibility with other products allows designers to easily migrate to the Atmel

AT68166FT memory.

The AT68166FT is powered at 3.3V and is 5V tolerant.

The AT68166FT is processed according to the test methods of the latest revision of

the MIL-PRF-38535 or the ESCC 9000.

7531I–AERO–06/10

5962-0622901QXC相似产品对比

	5962-0622901QXC	5962-0622901VXC	5962R0622901VXC	AT68166FT-YS20-SCC	AT68166FT-YM25-E
描述	Standard SRAM, 512KX32, 25ns, CMOS, CQFP68	Standard SRAM, 512KX32, 25ns, CMOS, CQFP68	Standard SRAM, 512KX32, 25ns, CMOS, CQFP68	Standard SRAM, 512KX32, 20ns, CMOS, CQFP68	Standard SRAM, 512KX32, 25ns, CMOS, CQFP68
包装说明	QFF,	QFF,	QFF,	0.950 INCH, NCTB, CERAMIC, MQFP-68	0.950 INCH, NCTB, CERAMIC, MQFP-68
Reach Compliance Code	compliant	compliant	compliant	unknown	compliant
ECCN代码	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
最长访问时间	25 ns	25 ns	25 ns	20 ns	25 ns
其他特性	IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO	IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO	IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO	IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO	IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO
JESD-30 代码	S-CQFP-F68	S-CQFP-F68	S-CQFP-F68	S-CQFP-F68	S-CQFP-F68
长度	24.14 mm	24.14 mm	24.14 mm	24.14 mm	24.14 mm
内存密度	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
功能数量	1	1	1	1	1
端子数量	68	68	68	68	68
字数	524288 words	524288 words	524288 words	524288 words	524288 words
字数代码	512000	512000	512000	512000	512000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
组织	512KX32	512KX32	512KX32	512KX32	512KX32
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装代码	QFF	QFF	QFF	QFF	QFF
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
认证状态	Qualified	Qualified	Qualified	Not Qualified	Not Qualified
座面最大高度	4.7 mm	4.7 mm	4.7 mm	4.7 mm	4.7 mm
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
端子形式	FLAT	FLAT	FLAT	FLAT	FLAT
端子节距	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	QUAD	QUAD	QUAD	QUAD	QUAD
宽度	24.14 mm	24.14 mm	24.14 mm	24.14 mm	24.14 mm
厂商名称	Microchip(微芯科技)	Microchip(微芯科技)	-	Microchip(微芯科技)	Microchip(微芯科技)
JESD-609代码	e4	e4	e4	-	-
内存宽度	32	32	32	-	32
筛选级别	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V	ESCC9000	-
端子面层	GOLD	GOLD	GOLD	-	-
Base Number Matches	1	1	1	-	-

5962-0622901QXC

5962-0622901QXC概述

5962-0622901QXC规格参数

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