Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
参数名称 | 属性值 |
厂商名称 | SAMSUNG(三星) |
包装说明 | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
外壳连接 | ISOLATED |
最大集电极电流 (IC) | 0.1 A |
集电极-发射极最大电压 | 200 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 160 |
JEDEC-95代码 | TO-126 |
JESD-30 代码 | R-PSFM-T3 |
元件数量 | 1 |
端子数量 | 3 |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
极性/信道类型 | NPN |
功耗环境最大值 | 5 W |
认证状态 | Not Qualified |
表面贴装 | NO |
端子形式 | THROUGH-HOLE |
端子位置 | SINGLE |
晶体管应用 | AMPLIFIER |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 150 MHz |
VCEsat-Max | 0.6 V |
Base Number Matches | 1 |
KSC3502-F | KSC3502-C | KSC3502-D | KSC3502 | KSC3502-E | |
---|---|---|---|---|---|
描述 | Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin | Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin | Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin | Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin | Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin |
厂商名称 | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
最大集电极电流 (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
集电极-发射极最大电压 | 200 V | 200 V | 200 V | 200 V | 200 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 160 | 40 | 60 | 40 | 100 |
JEDEC-95代码 | TO-126 | TO-126 | TO-126 | TO-126 | TO-126 |
JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
元件数量 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
极性/信道类型 | NPN | NPN | NPN | NPN | NPN |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO | NO |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 150 MHz | 150 MHz | 150 MHz | 150 MHz | 150 MHz |
功耗环境最大值 | 5 W | 5 W | 5 W | - | 5 W |
VCEsat-Max | 0.6 V | 0.6 V | 0.6 V | - | 0.6 V |
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