Infineon Specialty DRAMs
Mobile-RAM
w w w. i n f i n e o n . c o m / m e m o r y / Mo b i l e - R A M
Never stop thinking.
Mobile-RAM – Extended Battery
Lifetime for Handhelds
A S O N E O F T H E W O R L D ’ S T O P T H R E E memory companies, Infineon offers a wide portfolio of
leading-edge Mobile-RAM devices (low-power SDRAMs) targeted specifically at:
PDAs
Cellphones (smart and feature phones)
Digital cameras
MP3 players
I N F I N E O N ’ S M O B I L E - R A M product line combines
Ultra low-power consumption for battery-powered systems with
Extra compact chip-scale packages for space-constrained applications
I N F I N E O N ’ S M O B I L E - R A M cuts power consumption by up to 80 % (depending on operating conditions
and system design) – thanks to its latest memory technology, low operating voltage (1.8 V) and its unique, integrated
power management features.
M O B I L E - R A M D E V I C E S come in a Fine-pitch Ball Grid Array (FBGA) package. These packages leverage
Infineon’s proprietary wire bonding Board-On-Chip (BOC) technology for smallest form factors. The latest product
generation further improves form factor by reducing package heights from 1.2 to 1 mm.
Impressive Power Consumption Savings
I N F I N E O N ’ S M O B I L E - R A M devices achieve these dramatic power consumption savings by measuring
the temperature with an integrated sensor and automatically adjusting the refresh interval accordingly.
F O R U S E R S , this means that their devices can either run twice as long on a single battery charge or can
offer completely new features that would have been previously unthinkable. The fact that nearly half of all PDAs produced
today contain Mobile-RAMs from Infineon confirms the company’s pioneering role in this segment.
Mobile-RAM for Lowest Power Consumption also in Operating Mode
Standard SDRAM
“low power sort”
281 mW
100 %
215 mW
77 %
100 %
163 mW
58 %
76 %
100 %
108 mW
38 %
50 %
66 %
Power consumption
3.3 V - 256 M
85 mA*
* operating current (lcc1)
3.3 V - 256 M
65 mA*
2.5 V - 256 M
65 mA*
1.8 V - 256 M
60 mA*
Mobile-RAM for Unlimited Memory Supply in Standby Mode
Standard
SDRAM
“low power sort”
2.8 mW
100 %
1.6 mW
57 %
100 %
1.19 mW
43 %
74 %
100 %
0.68
24
43
57
mW
%
%
%
Power consumption
3.3 V - 256 M
850 µA (70°C)*
* standby current (lcc6)
3.3 V - 256 M
475 µA (70°C)*
2.5 V - 256 M
475 µA (70°C)*
1.8 V - 256 M
375 µA (70°C)*
Ahead of the Trend
2003
3.3 V
2004
2005
Voltage
conversion
2.5 V
1.8 V
Trend towards
green package
TSOP
Trend towards
KGD
BGA
FGBA
Known Good Die
SDR
Trend towards
DDR
DDR
Source: IFX
M A N U F A C T U R E R S A R E C H A L L E N G E D to lower core and I/O voltage in order to further reduce power
consumption. Compared with the 2.5 V technology previously in use, Infineon’s next-generation 1.8 V technology meets
these demands by cutting power consumption by approximately 40 %.
T H E M A R K E T I S A L S O C A L L I N G for a reduction in harmful substances, the elimination of lead in chips
and easier recycling. Infineon is one of the first manufacturers to offer Mobile-RAM chips in green packages.
I N A N T I C I P A T I O N O F R I S I N G demand for cost-optimized multi-chip solutions, (combining flash and
Mobile-RAM) Infineon will also soon be introducing a pre-tested Known Good Die (KGD) / wafer solution.
A N D T O R E D U C E P O W E R consumption even further, Infineon plans to switch its Mobile-RAM devices from
SDR to DDR speeds. Due to be launched in the near future. For more details, please contact your local sales representative.
Industry-wide Standard
I N F I N E O N W O R K E D C L O S E L Y with its industry partners to standardize the low-power features and
54-ball FBGA package for Mobile-RAM through JEDEC (Joint Electron Device Engineering Council), the semiconductor
engineering standardization body of EIA (Electronic Industry Alliance). Information on controller and ASIC vendors that
support the new Mobile-RAM feature set standard is available on request.
F O R T H E L A T E S T I N F O R M A T I O N and datasheet updates on Mobile-RAM, visit our website at
www.infineon.com/memory/Mobile-RAM
Product Portfolio
Density
128 Mb
8 M x 16
Part number
HYB39L128160AT-7.5
HYB39L128160AC-7.5
HYB25L128160AC-7.5
HYE25L128160AC-7.5
NEW!
NEW!
NEW!
NEW!
256 Mb
16 M x 16
HYB18L128160BF-7.5
HYE18L128160BF-7.5
HYB18L128160BC-7.5
HYE18L128160BC-7.5
HYB39L256160AT-7.5
HYB39L256160AC-7.5
HYB25L256160AC-7.5
HYE25L256160AC-7.5
HYB25L256160AF-7.5
Temp.
range
0 - 70°C
0 - 70°C
0 - 70°C
-25 - 85°C
0 - 70°C
-25 - 85°C
0 - 70°C
-25 - 85°C
0 - 70°C
0 - 70°C
0 - 70°C
-25 - 85°C
0 - 70°C
Power
supply core
3.3 V
3.3 V
2.5 V
2.5 V
1.8 V
1.8 V
1.8 V
1.8 V
3.3 V
3.3 V
2.5 V
2.5 V
3.3 V
or 2.5 V
HYE25L256160AF-7.5
NEW!
NEW!
NEW!
NEW!
512 Mb,Dual
16 M x 16
HYB18L256160BF-7.5
HYE18L256160BF-7.5
HYB18L256160BC-7.5
HYE18L256160BC-7.5
HYB25L512160AC-7.5
-25 - 85°C
0 - 70°C
-25 - 85°C
0 - 70°C
-25 - 85°C
0 - 70°C
3.3 V
or 2.5 V
1.8 V
1.8 V
1.8 V
1.8 V
3.3 V
or 2.5 V
Power
supply I/O
3.3 V
3.3 V
2.5 V / 1.8 V
2.5 V / 1.8 V
1.8 V
1.8 V
1.8 V
1.8 V
3.3 V
3.3 V
2.5 V / 1.8 V
2.5 V / 1.8 V
3.3 V or
2.5 V / 1.8 V
3.3 V or
2.5 V / 1.8 V
1.8 V
1.8 V
1.8 V
1.8 V
3.3 V or
2.5 V / 1.8 V
4
X
–
X
X
–
–
FBGA-54
4
4
4
4
4
X
X
X
X
X
X
–
–
–
–
X
X
X
X
X
X
X
X
X
X
–
X
X
X
X
X
X
X
–
–
FBGA-54
FBGA-54
FBGA-54
FBGA-54
FBGA-54
4
X
X
X
X
–
X
FBGA-54
# of
banks
4
4
4
4
4
4
4
4
4
4
4
4
–
–
–
–
X
X
X
X
–
–
X
X
–
–
X
X
–
–
–
–
–
–
X
X
–
–
X
X
X
X
X
X
–
–
X
X
–
–
X
X
X
X
X
X
–
–
X
X
–
–
–
–
X
X
X
X
–
–
–
–
OCTS TCSR PASR DPD
DS
GREEN
product
Package
TSOP-54
FBGA-54
FBGA-54
FBGA-54
FBGA-54
FBGA-54
FBGA-54
FBGA-54
TSOP-54
FBGA-54
FBGA-54
FBGA-54
–
–
–
–
X
X
–
–
–
–
–
–
Speed:
133 MHz
CAS Latency:
3-3-3
OCTS (On-Chip Temperature Sensor):
The built-in temperature sensor adapts the refresh
rate to the actual junction temperature of the chip
without draining any CPU power. (Note: with
standard DRAMs, the refresh rate is set to work at
the max. temperature.)
TCSR (Temperature-Compensated Self-Refresh):
Same as OCTS but externally triggered
CPU power required
PASR (Partial Array Self-Refresh):
Allows user to select volume of memory needed to
further reduce power consumption
Adjustable from all 4 banks to 1/16 array
DPD (Deep Power-Down):
Maximum power consumption reduction by cutting
off power supply to Mobile-RAM
Data is not retained
DS (Selectable Drive Strength):
Can be adjusted to reflect bus load, e.g. half
strength for point-to-point and full strength for
module applications
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