256 MBit Synchronous Low-Power DRAM
HYB39L256160AC | HYB39L256160AC-7.5 | HYB39L256160AT-8 | HYB39L256160AC-8 | HYB39L256160AT-7.5 | |
---|---|---|---|---|---|
描述 | 256 MBit Synchronous Low-Power DRAM | 256 MBit Synchronous Low-Power DRAM | 256 MBit Synchronous Low-Power DRAM | 256 MBit Synchronous Low-Power DRAM | 256 MBit Synchronous Low-Power DRAM |
是否Rohs认证 | - | 不符合 | 不符合 | 不符合 | 不符合 |
厂商名称 | - | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) |
零件包装代码 | - | BGA | TSOP2 | BGA | TSOP2 |
包装说明 | - | TFBGA, BGA54,9X9,32 | TSOP2, TSOP54,.46,32 | TFBGA, BGA54,9X9,32 | TSOP2, TSOP54,.46,32 |
针数 | - | 54 | 54 | 54 | 54 |
Reach Compliance Code | - | compliant | compliant | compliant | compliant |
ECCN代码 | - | EAR99 | EAR99 | EAR99 | EAR99 |
访问模式 | - | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
最长访问时间 | - | 5.4 ns | 6 ns | 6 ns | 5.4 ns |
其他特性 | - | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
最大时钟频率 (fCLK) | - | 133 MHz | 125 MHz | 125 MHz | 133 MHz |
I/O 类型 | - | COMMON | COMMON | COMMON | COMMON |
交错的突发长度 | - | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 |
JESD-30 代码 | - | R-PBGA-B54 | R-PDSO-G54 | R-PBGA-B54 | R-PDSO-G54 |
JESD-609代码 | - | e0 | e0 | e0 | e0 |
长度 | - | 12 mm | 22.22 mm | 12 mm | 22.22 mm |
内存密度 | - | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit |
内存集成电路类型 | - | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM |
内存宽度 | - | 16 | 16 | 16 | 16 |
功能数量 | - | 1 | 1 | 1 | 1 |
端口数量 | - | 1 | 1 | 1 | 1 |
端子数量 | - | 54 | 54 | 54 | 54 |
字数 | - | 16777216 words | 16777216 words | 16777216 words | 16777216 words |
字数代码 | - | 16000000 | 16000000 | 16000000 | 16000000 |
工作模式 | - | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | - | 70 °C | 70 °C | 70 °C | 70 °C |
组织 | - | 16MX16 | 16MX16 | 16MX16 | 16MX16 |
输出特性 | - | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | - | TFBGA | TSOP2 | TFBGA | TSOP2 |
封装等效代码 | - | BGA54,9X9,32 | TSOP54,.46,32 | BGA54,9X9,32 | TSOP54,.46,32 |
封装形状 | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | - | GRID ARRAY, THIN PROFILE, FINE PITCH | SMALL OUTLINE, THIN PROFILE | GRID ARRAY, THIN PROFILE, FINE PITCH | SMALL OUTLINE, THIN PROFILE |
峰值回流温度(摄氏度) | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
电源 | - | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
认证状态 | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
刷新周期 | - | 8192 | 8192 | 8192 | 8192 |
座面最大高度 | - | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
自我刷新 | - | YES | YES | YES | YES |
连续突发长度 | - | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP |
最大待机电流 | - | 0.000475 A | 0.000475 A | 0.000475 A | 0.000475 A |
最大压摆率 | - | 0.18 mA | 0.14 mA | 0.14 mA | 0.18 mA |
最大供电电压 (Vsup) | - | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
最小供电电压 (Vsup) | - | 2.7 V | 2.7 V | 2.7 V | 2.7 V |
标称供电电压 (Vsup) | - | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
表面贴装 | - | YES | YES | YES | YES |
技术 | - | CMOS | CMOS | CMOS | CMOS |
温度等级 | - | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子面层 | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | - | BALL | GULL WING | BALL | GULL WING |
端子节距 | - | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
端子位置 | - | BOTTOM | DUAL | BOTTOM | DUAL |
处于峰值回流温度下的最长时间 | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
宽度 | - | 8 mm | 10.16 mm | 8 mm | 10.16 mm |
Base Number Matches | - | 1 | 1 | 1 | 1 |
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