DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D087
BCP69
PNP medium power transistor
Product specification
Supersedes data of 1999 Apr 08
2002 Nov 15
Philips Semiconductors
Product specification
PNP medium power transistor
FEATURES
•
High current (max. 1 A)
•
Low voltage (max. 20 V).
APPLICATIONS
•
General purpose switching and amplification
•
Power applications such as audio output stages.
handbook, halfpage
BCP69
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
4
DESCRIPTION
PNP medium power transistor in a SOT223 plastic
package. NPN complement: BCP68.
1
Top view
2
3
MAM288
2, 4
1
3
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−32
−20
−5
−1
−2
−200
1.35
+150
150
+150
V
V
V
A
A
mA
W
°C
°C
°C
UNIT
2002 Nov 15
2
Philips Semiconductors
Product specification
PNP medium power transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
VALUE
91
10
BCP69
UNIT
K/W
K/W
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−25
V
I
E
= 0; V
CB
=
−25
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−5
V
I
C
=
−5
mA; V
CE
=
−10
V
I
C
=
−500
mA; V
CE
=
−1
V; see Fig.2
I
C
=
−1
A; V
CE
=
−1
V; see Fig.2
DC current gain
BCP69-16
BCP69-25
DC current gain
BCP69-16/IN
V
CEsat
V
BE
C
c
f
T
h
FE1
-----------
h
FE2
collector-emitter saturation voltage I
C
=
−1
A; I
B
=
−100
mA
base-emitter voltage
collector capacitance
transition frequency
DC current gain ratio of the
complementary pairs
I
C
=
−5
mA; V
CE
=
−10
V
I
C
=
−1
A; V
CE
=
−1
V
I
E
= i
e
= 0; V
CB
=
−5
V; f = 1 MHz
I
C
= 0.5 A;
V
CE
= 1 V
I
C
=
−10
mA; V
CE
=
−1.8
V; see Fig.3
140
−
−
−
−
−
−
−
−620
−
48
−
−
230
−500
−
−1
−
−
1.6
mV
mV
V
pF
MHz
I
C
=
−500
mA; V
CE
=
−1
V; see Fig.2
100
160
−
−
250
375
MIN.
−
−
−
50
85
60
TYP.
−
−
−
−
−
−
MAX. UNIT
−100
−10
−100
−
375
−
nA
µA
nA
I
C
=
−10
mA; V
CE
=
−5
V; f = 100 MHz 40
2002 Nov 15
3
Philips Semiconductors
Product specification
PNP medium power transistor
BCP69
MGD845
400
handbook, full pagewidth
hFE
300
200
100
0
−10
−1
BCP69
V
CE
=
−1
V.
−1
−10
−10
2
−10
3
IC (mA)
−10
4
Fig.2 DC current gain; typical values.
handbook, full pagewidth
400
MBL745
hFE
300
(1)
200
(2)
100
(3)
0
−10
−1
BCP69-16/IN
V
CE
=
−1.8
V.
−1
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−40 °C.
−10
−10
2
IC (mA)
−10
3
Fig.3 DC current gain; typical values.
2002 Nov 15
4
Philips Semiconductors
Product specification
PNP medium power transistor
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
BCP69
SOT223
D
B
E
A
X
c
y
H
E
b
1
v
M
A
4
Q
A
A
1
1
e
1
e
2
b
p
3
w
M
B
detail X
L
p
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.8
1.5
A
1
0.10
0.01
b
p
0.80
0.60
b
1
3.1
2.9
c
0.32
0.22
D
6.7
6.3
E
3.7
3.3
e
4.6
e
1
2.3
H
E
7.3
6.7
L
p
1.1
0.7
Q
0.95
0.85
v
0.2
w
0.1
y
0.1
OUTLINE
VERSION
SOT223
REFERENCES
IEC
JEDEC
EIAJ
SC-73
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
2002 Nov 15
5
FPGA/CPLD
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