IC,DRAM,NIBBLE MODE,1MX1,MOS,SOJ,20PIN,CERAMIC
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| Objectid | 1164774136 |
| 包装说明 | SOJ, SOJ20/26,.34 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| YTEOL | 0 |
| 最长访问时间 | 100 ns |
| I/O 类型 | SEPARATE |
| JESD-30 代码 | R-XDSO-J20 |
| JESD-609代码 | e0 |
| 内存密度 | 1048576 bit |
| 内存集成电路类型 | NIBBLE MODE DRAM |
| 内存宽度 | 1 |
| 端子数量 | 20 |
| 字数 | 1048576 words |
| 字数代码 | 1000000 |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 1MX1 |
| 输出特性 | 3-STATE |
| 封装主体材料 | CERAMIC |
| 封装代码 | SOJ |
| 封装等效代码 | SOJ20/26,.34 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 认证状态 | Not Qualified |
| 刷新周期 | 512 |
| 最大压摆率 | 0.12 mA |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | MOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | J BEND |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| MB811001-10CJ | MB811001-15C | MB811001-10C | MB811001-10PSZ | MB811001-12CJ | |
|---|---|---|---|---|---|
| 描述 | IC,DRAM,NIBBLE MODE,1MX1,MOS,SOJ,20PIN,CERAMIC | Nibble Mode DRAM, 1MX1, 150ns, MOS, CDIP18 | Nibble Mode DRAM, 1MX1, 100ns, MOS, CDIP18 | Nibble Mode DRAM, 1MX1, 100ns, MOS, PZIP20 | Nibble Mode DRAM, 1MX1, 120ns, MOS, CDSO20 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 包装说明 | SOJ, SOJ20/26,.34 | DIP, DIP18,.3 | DIP, DIP18,.3 | ZIP, ZIP20,.1 | SOJ, SOJ20/26,.34 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| 最长访问时间 | 100 ns | 150 ns | 100 ns | 100 ns | 120 ns |
| I/O 类型 | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE |
| JESD-30 代码 | R-XDSO-J20 | R-XDIP-T18 | R-XDIP-T18 | R-PZIP-T20 | R-XDSO-J20 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit |
| 内存集成电路类型 | NIBBLE MODE DRAM | NIBBLE MODE DRAM | NIBBLE MODE DRAM | NIBBLE MODE DRAM | NIBBLE MODE DRAM |
| 内存宽度 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 20 | 18 | 18 | 20 | 20 |
| 字数 | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words |
| 字数代码 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 1MX1 | 1MX1 | 1MX1 | 1MX1 | 1MX1 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | CERAMIC | CERAMIC | CERAMIC | PLASTIC/EPOXY | CERAMIC |
| 封装代码 | SOJ | DIP | DIP | ZIP | SOJ |
| 封装等效代码 | SOJ20/26,.34 | DIP18,.3 | DIP18,.3 | ZIP20,.1 | SOJ20/26,.34 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | IN-LINE | IN-LINE | IN-LINE | SMALL OUTLINE |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 512 | 512 | 512 | 512 | 512 |
| 最大压摆率 | 0.12 mA | 0.085 mA | 0.12 mA | 0.12 mA | 0.1 mA |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | NO | NO | NO | YES |
| 技术 | MOS | MOS | MOS | MOS | MOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | J BEND | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | J BEND |
| 端子节距 | 1.27 mm | 2.54 mm | 2.54 mm | 1.27 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | ZIG-ZAG | DUAL |
| 厂商名称 | - | FUJITSU(富士通) | FUJITSU(富士通) | FUJITSU(富士通) | FUJITSU(富士通) |
| 电源 | - | 5 V | 5 V | 5 V | 5 V |
| Base Number Matches | - | 1 | 1 | 1 | 1 |
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