Philips Semiconductors
Product specification
Rectifier diode
ultrafast, low switching loss
FEATURES
• Extremely fast switching
• Low reverse recovery current
• Low thermal resistance
• Reduces switching losses in
associated MOSFET
BYC8-600
SYMBOL
QUICK REFERENCE DATA
V
R
= 600 V
V
F
≤
1.85 V
I
F(AV)
= 8 A
t
rr
= 19 ns (typ)
k
1
a
2
APPLICATIONS
• Active power factor correction
• Half-bridge lighting ballasts
• Half-bridge/ full-bridge switched
mode power supplies.
The BYC8-600 is supplied in the
SOD59 (TO220AC) conventional
leaded package.
PINNING
PIN
1
2
tab
DESCRIPTION
cathode
anode
cathode
SOD59 (TO220AC)
tab
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
PARAMETER
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average forward current
CONDITIONS
MIN.
-
-
-
-
-
-
-
-40
-
MAX.
600
600
500
8
16
55
60
150
150
UNIT
V
V
V
A
A
A
A
˚C
˚C
T
stg
T
j
T
mb
≤
110 ˚C
δ
= 0.5; with reapplied V
RRM(max)
;
T
mb
≤
82 ˚C
Repetitive peak forward current
δ
= 0.5; with reapplied V
RRM(max)
;
T
mb
≤
82 ˚C
Non-repetitive peak forward
t = 10 ms
current.
t = 8.3 ms
sinusoidal; T
j
= 150˚C prior to surge
with reapplied V
RWM(max)
Storage temperature
Operating junction temperature
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
in free air.
-
TYP.
-
60
MAX.
2.2
-
UNIT
K/W
K/W
April 2001
1
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diode
ultrafast, low switching loss
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
t
rr
t
rr
t
rr
I
rrm
I
rrm
V
fr
PARAMETER
Forward voltage
Reverse current
Reverse recovery time
Reverse recovery time
Reverse recovery time
Peak reverse recovery current
Peak reverse recovery current
Forward recovery voltage
CONDITIONS
I
F
= 8 A; T
j
= 150˚C
I
F
= 16 A; T
j
= 150˚C
I
F
= 8 A;
V
R
= 600 V
V
R
= 500 V; T
j
= 100 ˚C
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 50 A/µs
I
F
= 8 A; V
R
= 400 V;
dI
F
/dt = 500 A/µs
I
F
= 8 A; V
R
= 400 V;
dI
F
/dt = 500 A/µs; T
j
= 100˚C
I
F
= 8 A; V
R
= 400 V;
dI
F
/dt = 50 A/µs; T
j
= 125˚C
I
F
= 8 A; V
R
= 400 V;
dI
F
/dt = 500 A/µs; T
j
= 100˚C
I
F
= 10 A; dI
F
/dt = 100 A/µs
MIN.
-
-
-
-
-
-
-
-
-
-
-
TYP.
1.4
1.7
2.0
9
1.1
30
19
32
1.5
9.5
8
BYC8-600
MAX.
1.85
2.3
2.9
150
3.0
52
-
40
5.5
12
10
UNIT
V
V
V
µA
mA
ns
ns
ns
A
A
V
IL
Vin
150 uH
typ
ID
Vo = 400 V d.c.
OUTPUT DIODE
Vin Vin = 400 V d.c.
IR IF
inductive load
IL
500 V MOSFET
Fig.1. Typical application, output rectifier in boost
converter power factor correction circuit. Continuous
conduction, mode where the transistor turns on whilst
forward current is still flowing in the diode.
Fig.2. Typical application, freewheeling diode in half
bridge converter. Continuous conduction mode, where
each transistor turns on whilst forward current is still
flowing in the other bridge leg diode.
April 2001
2
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diode
ultrafast, low switching loss
BYC8-600
25
20
15
10
Forward dissipation, PF (W)
Vo = 1.4 V
Rs = 0.05625 Ohms
BYC8-600
Tmb(max) C
95
D = 1.0
106
117
ID
dIF/dt
Irrm
ID = IL
losses due to
diode reverse recovery
0.5
0.2
0.1
time
I
t
p
D=
t
p
T
t
128
VD
139
5
T
0
0
2
4
6
8
10
Average forward current, IF(AV) (A)
150
12
Fig.3. Maximum forward dissipation as a function of
average forward current; rectangular current
waveform where I
F(AV)
=I
F(RMS)
x
√D.
Fig.6. Origin of switching losses in transistor due to
diode reverse recovery.
0.25
Diode reverse recovery switching losses, Pdsw (W)
f = 20 kHz
Tj = 125 C
0.2 VR = 400 V
100
Reverse recovery time, trr (ns)
BYC8-600
16 A
12 A
8A
0.15
16 A
0.1
12 A
IF = 5 A
IF = 8 A
0.05
BYC8-600
0
100
Rate of change of current, dIF/dt (A/us)
1000
Tj = 125 C
VR = 400 V
10
100
Rate of change of current, dIF/dt (A/us)
1000
Fig.4. Typical reverse recovery switching losses in
diode, as a function of rate of change of current dI
F
/dt.
Fig.7. Typical reverse recovery time t
rr
, as a function
of rate of change of current dI
F
/dt.
Transistor losses due to diode reverse recovery, Ptsw (W)
f = 20 kHz
Tj = 125 C
7
16 A
VR = 400 V
6
12 A
5
8
4
3
2
1
BYC8-600
0
100
Rate of change of current, dIF/dt (A/us)
1000
IF = 5 A
8A
100
Peak reverse recovery current, Irrm (A)
BYC8-600
10
16 A
IF = 5 A
1
100
Tj = 125 C
VR = 400 V
Rate of change of current, dIF/dt (A/us)
1000
Fig.5. Typical switching losses in transistor due to
reverse recovery of diode, as a function of of change
of current dI
F
/dt.
Fig.8. Typical peak reverse recovery current, I
rrm
as a
function of rate of change of current dI
F
/dt.
April 2001
3
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diode
ultrafast, low switching loss
BYC8-600
I
dI
F
dt
F
20
Forward current, IF (A)
Tj = 25 C
Tj = 150 C
BYC8-600
t
15
rr
time
typ
10
max
Q
I
I
s
10%
100%
5
R
rrm
0
0
1
2
Forward voltage, VF (V)
3
4
Fig.9. Definition of reverse recovery parameters t
rr
, I
rrm
Fig.12. Typical and maximum forward characteristic
I
F
= f(V
F
); T
j
= 25˚C and 150˚C.
20
Peak forward recovery voltage, Vfr (V)
Tj = 25 C
IF = 10 A
BYC8-600
100mA
Reverse leakage current (A)
BYC8-600
15
typ
10mA
Tj = 125 C
100 C
75 C
1mA
10
100uA
50 C
25 C
5
10uA
0
0
50
100
150
Rate of change of current, dIF/dt (A/ s)
200
1uA
0
100
200
300
400
Reverse voltage (V)
500
600
Fig.10. Typical forward recovery voltage, V
fr
as a
function of rate of change of current dI
F
/dt.
Fig.13. Typical reverse leakage current as a function
of reverse voltage. I
R
= f(V
R
); parameter T
j
Transient thermal impedance, Zth j-mb (K/W)
I
F
10
1
time
VF
0.1
0.01
P
D
t
p
D=
V
VF
time
t
p
T
t
fr
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BYC8
10s
Fig.11. Definition of forward recovery voltage V
fr
Fig.14. Maximum thermal impedance Z
th j-mb
as a
function of pulse width.
April 2001
4
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diode
ultrafast, low switching loss
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
BYC8-600
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
3,0 max
not tinned
3,0
15,8
max
13,5
min
1,3
max
1
(2x)
2
0,9 max (2x)
0,6
2,4
5,08
Fig.15. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
April 2001
5
Rev 1.400
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
