VISHAY
BF994S
Vishay Semiconductors
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
2
1
Features
•
•
•
•
•
•
Integrated gate protection diodes
High cross modulation performance
Low noise figure
High AGC-range
Low feedback capacitance
Low input capacitance
3
4
G2
G1
D
S
Applications
Input- and mixer stages especially VHF TV-tuners.
Electrostatic sensitive device.
Observe precautions for handling.
13628
Mechanical Data
Case:
SOT-143 Plastic case
Weight:
approx. 8.0 mg
Marking:
MG
Pinning:
1 =Source, 2 = Drain,
3 = Gate 1, 4 = Gate 2
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak
current
Total power dissipation
Channel temperature
Storage temperature range
T
amb
≤
60 °C
Test condition
Symbol
V
DS
I
D
± I
G1/G2SM
P
tot
T
Ch
T
stg
Value
20
30
10
200
150
- 55 to + 150
Unit
V
mA
mA
mW
°C
°C
Maximum Thermal Resistance
Parameter
Channel ambient
1)
1)
Test condition
Symbol
R
thChA
Value
450
Unit
K/W
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
µm
Cu
Document Number 85008
Rev. 1.5, 20-Aug-04
www.vishay.com
1
BF994S
Vishay Semiconductors
Electrical DC Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Drain - source breakdown
voltage
Gate 1 - source breakdown
voltage
Gate 2 - source breakdown
voltage
Test condition
I
D
= 10
µA,
- V
G1S
= - V
G2S
= 4 V
Symbol
V
(BR)DS
Min
20
6
20
20
50
50
4
4
9.5
18
10.5
18
2.5
2.0
Typ.
Max
VISHAY
Unit
V
V
V
nA
nA
mA
mA
mA
V
V
± I
G1S
= 10 mA, V
G2S
= V
DS
= 0 ± V
(BR)G1SS
± I
G2S
= 10 mA, V
G1S
= V
DS
= 0 ± V
(BR)G2SS
± I
G1SS
± I
G2SS
I
DSS
I
DSS
I
DSS
Gate 1 - source leakage current ± V
G1S
= 5 V, V
G2S
= V
DS
= 0
Gate 2 - source leakage current ± V
G2S
= 5 V, V
G1S
= V
DS
= 0
Drain current
V
DS
= 15 V, V
G1S
= 0, V
G2S
= 4 V
Gate 1 - source cut-off voltage
Gate 2 - source cut-off voltage
V
DS
= 15 V, V
G2S
= 4 V,
I
D
= 20
µA
- V
G1S(OFF)
V
DS
= 15 V, V
G1S
= 0, I
D
= 20
µA
- V
G2S(OFF)
Electrical AC Characteristics
T
amb
= 25 °C, unless otherwise specified
V
DS
= 15 V, I
D
= 10 mA, V
G2S
= 4 V, f = 1 MHz
Parameter
Forward transadmittance
Gate 1 input capacitance
Gate 2 input capacitance
Feedback capacitance
Output capacitance
Power gain
AGC range
Noise figure
G
S
= 2 mS, G
L
= 0.5 mS,
f = 200 MHz
V
G2S
= 4 to -2 V, f = 200 MHz
G
S
= 2 mS, G
L
= 0.5 mS,
f = 200 MHz
V
G1S
= 0, V
G2S
= 4 V
Test condition
Symbol
| zy
21s
|
C
issg1
C
issg2
C
rss
C
oss
G
ps
∆G
ps
F
Min
15
Typ.
18.5
2.5
1.2
25
1.0
25
50
1.0
35
1.3
3.0
Max
Unit
mS
pF
pF
fF
pF
dB
dB
dB
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
300
250
200
150
100
50
0
0
96 12159
P
tot
-Total
Power Dissipation ( mW )
32
V
G2S
= 4 V
28 P = 200 mW
tot
I
D
– Drain Current ( mA)
24
20
16
12
8
4
0
2V
1.5 V
1V
0.5 V
0
–0.5 V
V
G1S
= –1 V
0
2
4
6
8 10 12 14 16
V
DS
– Drain Source Voltage ( V )
20
40
60
80
100 120 140 160
12849
T
amb
- Ambient Temperature (
°C
)
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 2. Drain Current vs. Drain Source Voltage
www.vishay.com
2
Document Number 85008
Rev. 1.5, 20-Aug-04
VISHAY
BF994S
Vishay Semiconductors
22
20
I
D
– Drain Current ( mA)
C
issg2
– Gate 2 Input Capacitance ( pF )
18
16
14
12
10
8
6
4
2
0
–1.0
V
DS
= 15 V
6V5V 4V 3V
2V
1V
3.0
2.5
2.0
1.5
1.0
0.5
0.0
–2
–1
0
1
2
3
4
5
V
G2S
– Gate 2 Source Voltage ( V )
V
DS
= 15 V
V
G1S
= 0
f = 1 MHz
0.5 V
0
V
G2S
= –1 V
–0.5
0.0
0.5
1.0
1.5
V
G1S
– Gate 1 Source Voltage ( V )
12851
12854
Figure 3. Drain Current vs. Gate 1 Source Voltage
Figure 6. Gate 2 Input Capacitance vs. Gate 2 Source Voltage
20
I
D
– Drain Current ( mA)
5V
V
DS
= 15 V
18
16
14
12
10
8
6
4
2
0
–1.0
4V
3V
2V
1V
C
oss
– Output Capacitance ( pF )
22
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
2
4 6 8 10 12 14 16 18 20
V
DS
– Drain Source Voltage ( V )
V
G2S
= 4 V
f = 1 MHz
0
V
G1S
= –1 V
–0.5
0.0
0.5
1.0
1.5
V
G2S
– Gate 2 Source Voltage ( V )
12852
12856
Figure 4. Drain Current vs. Gate 2 Source Voltage
Figure 7. Output Capacitance vs. Drain Source Voltage
C
issg1
– Gate 1 Input Capacitance ( pF )
4.0
–Transducer ain( dB )
G
10
V
DS
= 15 V
V
G2S
= 4 V
f = 1 MHz
0
–10
–20
–30
–40
–50
f = 200 MHz
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
–1.0
4V
3V
2V
1V
0
–0.2 V
–0.4 V
–0.6 V
–0.8 V
V
G2 S
= –1 V
12853
–0.5
0.0
0.5
1.0
I
D
– Drain Current ( mA )
1.5
–60
–2.0 –1.5 –1.0 –0.5 0.0 0.5 1.0 1.5 2.0
12855
V
G1S
– Gate 1 Source Voltage ( V )
S
21
2
Figure 5. Gate 1 Input Capacitance vs. Drain Current
Figure 8. Transducer Gain vs. Gate 1 Source Voltage
Document Number 85008
Rev. 1.5, 20-Aug-04
www.vishay.com
3
BF994S
Vishay Semiconductors
VISHAY
y
21s
– ForwardTransadmittance ( mS )
20
18
16
14
12
10
8
6
4
2
0
0
2
4
V
G2S
= 0
V
DS
= 15 V
f = 1 MHz
4V
3V
2V
Im ( y ) ( mS )
22
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
12862
f = 700 MHz
600 MHz
500 MHz
400 MHz
300 MHz
200 MHz
50 MHz
0.4
V
DS
= 15 V
V
G2S
= 4 V
I
D
= 10 mA
f = 50...700 MHz
2.0
1V
0.5 V
12850
6
8 10 12 14 16 18
I
D
– Drain Current ( mA )
0.8
1.2
1.6
Re (y
22
) ( mS )
Figure 9. Forward Transadmittance vs. Drain Current
Figure 12. Short Circuit Output Admittance
12
f = 700 MHz
10
Im ( y ) ( mS )
11
8
6
4
2
400 MHz
300 MHz
200 MHz
600 MHz
500 MHz
50 MHz
0
0.0
0.5
12860
V
DS
= 15 V
V
G2S
= 4V
I
D
= 10 mA
f = 50...700 MHz
2.5
3.0
1.0
1.5
2.0
Re (y
11
) ( mS )
Figure 10. Short Circuit Input Admittance
0
–4
Im ( y
21
) ( mS )
f = 50 MHz
150 MHz
300 MHz
–8
–12
–16
–20
0
2
4
500 MHz
700 MHz
I
D
= 5 mA
10 mA
20 mA
6
V
DS
= 15 V
V
G2S
= 4 V
f = 50...700 MHz
12861
8 10 12 14 16 18 20 22
Re (y
21
( mS )
)
Figure 11. Short Circuit Forward Transfer Admittance
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4
Document Number 85008
Rev. 1.5, 20-Aug-04
VISHAY
V
DS
= 15 V, I
D
= 10 mA, V
G2S
= 4 V, Z
0
= 50
Ω
S
11
j
120 °
j0.5
j2
150 °
j0.2
j5
200
180 °
50
450
700 MHz
BF994S
Vishay Semiconductors
S
21
90 °
60 °
30 °
0
0.2
0.5
1
2
5
50
–j5
1
2
0°
200
–j0.2
700 MHz
–j0.5
12964
450
–j2
–j
–150 °
–120 °
–60 °
–30°
12966
–90 °
Figure 13. Input Reflection Coefficient
Figure 15. Forward Transmission Coefficient
S
12
90 °
S
22
j
j0.5
30 °
200
180 °
50
700 MHz
0.08
0.16
0°
j0.2
j2
j5
120 °
150 °
60 °
0
–j0.2
0.2
0.5
1
2
5 50
–j5
700 MHz
–150 °
–120 °
–60 °
–30 °
–j0.5
12967
–j2
–j
12965
–90 °
Figure 14. Reverse Transmission Coefficient
Figure 16. Output Reflection Coefficient
Document Number 85008
Rev. 1.5, 20-Aug-04
www.vishay.com
5
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