10AM12
12 Watts, 20 Volts, Class A
Linear to 1000 MHz
GENERAL DESCRIPTION
The 10AM12 is a COMMON EMITTER transistor capable of providing 12
Watts of Class A, RF output power to 1000 MHz. This transistor is
specifically designed for general Class A amplifier applications. It utilizes
gold metalization and diffused ballasting to provide high reliability and
supreme ruggedness.
CASE OUTLINE
55JT, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
79 Watts
45 Volts
3.5 Volts
4.0 Amps
- 65 to +150
o
C
+200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout-1dB
Pin
Pg
Ft
VSWR
CHARACTERISTICS
Power Out @ 1 dB Compr.
Power Input
Power Gain Small Signal
Transition Frequency
Load Mismatch Tolerance
TEST CONDITIONS
F = 1.0 GHz
Ic = 3.0 A
Vcc = 20 Volts
Vce = 20 V, Ic =1.8 A
MIN
12
7.5
2.0
TYP
13
2.0
8.5
2.5
30:1
MAX
UNITS
Watts
Watts
dB
GHz
BVebo
1
BVces
1
BVceo
1
h
FE 1
Cob
1
θ
jc
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
DC Current Gain
Output Capacitance
Thermal Resistance
Ie = 12 mA
Ic = 25 mA
Ic = 25 mA
Vce = 5V, Ic =1000 mA
Vcb = 28V, f =1.0 MHz
3.5
45
25
20
20
2.0
25
2.2
Volts
Volts
Volts
pF
C/W
o
Note 1: Per Side
Issue A July 1997
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
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