This product complies with the RoHS Directive (EU 2002/95/EC).
Transmissive Photosensors (Photo lnterrupters)
CNA1011K
(ON1113)
Photo lnterrupter
For contactless SW and object detection
Overview
CNA1011K is a small size photocoupler package consisting of a high efficiency GaAs infrared light emitting diode used as the light
emitting element, and a high sensitivity phototransistor is used as the light detecting element.
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Power dissipation
*1
Forward current
Reverse voltage
Input
(Light emitting diode)
Collector-emitter voltage
(Base open)
Emitter-collector voltage
(Base open)
Collector current
Output
(Photo transistor)
Collector power dissipation
*2
Operating ambient temperature
Storage temperature
Ma
int
en
Reverse current
Input
Forward voltage
characteristics
Terminal capacitance
ce
/D
Parameter
isc
Electrical-Optical Characteristics
T
a
= 25°C±3°C
on
tin
Note) *1: Input power derating ratio is 1.0 mW/°C at T
a
≥
25°C
*2: Output power derating ratio is 1.34 mW/°C at T
a
≥
25°C
Symbol
I
R
V
F
C
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Symbol
P
D
I
F
Rating
75
50
3
Unit
mA
V
V
V
mW
V
R
V
CEO
V
ECO
I
C
30
5
20
mA
°C
°C
P
C
100
mW
T
opr
T
stg
–25 to +85
–30 to +100
Conditions
Min
Typ
1.2
35
Max
10
1.5
V
R
= 3 V
I
F
= 50 mA
V
R
= 0 V, f = 1 MHz
V
CE
= 10 V
I
CEO
C
C
I
C
200
V
CE
= 10 V, f = 1 MHz
5
M
ain
Di
sc te
on na
tin nc
ue e/
d
Highly precise position detection: 0.3 mm
Wide gap between emitting and detecting elements, suitable for thick plate detection
Fast response: t
r
, t
f
= 6.0
μs
(typ.)
Small output current variation against change in temperature
Features
ue
di
Unit
μA
V
pF
nA
pF
mA
Collector-emitter cutoff current
Output
(Base open)
characteristics
Collector-emitter capacitance
Collector current
Transfer
Collector-emitter saturation voltage
characteristics
Rise time
*
Fall time
*
Note) 1. Input and output are practiced by electricity.
2. This device is designed by disregarding radiation.
3. *: Switching time measurement circuit
Sig. in
an
Pl
V
CC
= 10 V, I
F
= 20 mA,
R
L
= 100
W
I
F
= 50 mA, I
C
= 0.1 mA
V
CC
= 10 V, I
C
= 1 mA,
R
L
= 100
W
0.3
0.5
6.0
6.0
V
CE(sat)
t
r
t
f
V
μs
μs
V
CC
Sig. out
(Input pulse)
(Output pulse)
t
r
t
f
90%
10%
t
r
: Rise time
t
f
: Fall time
50
Ω
R
L
Note) The part number in the parenthesis shows conventional part number.
Publication date: October 2008
SHG00018CED
1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
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