Low Noise, Cascadable
Silicon Bipolar MMIC Amplifier
Technical Data
INA-02184
INA-02186
Features
• Cascadable 50
Ω
Gain Block
• Low Noise Figure:
2.0 dB Typical at 0.5 GHz
• High Gain:
31 dB Typical at 0.5 GHz
26 dB Typical at 1.5 GHz
• 3 dB Bandwidth:
DC to 0.8 GHz
• Unconditionally Stable
(k>1)
• Low Cost Plastic Package
Circuit (MMIC) feedback amplifi-
ers housed in low cost plastic
packages. They are designed for
narrow or wide bandwidth
commercial applications that
require high gain and low noise IF
or RF amplification.
The INA series of MMICs is
fabricated using HP’s 10 GHz f
T
,
25 GHz f
MAX
, ISOSAT™-I silicon
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielec-
tric and scratch protection to
achieve excellent performance,
uniformity and reliability.
Package 84
Package 86
Description
The INA-02184 and INA-02186 are
low-noise silicon bipolar Mono-
lithic Microwave Integrated
Typical Biasing Configuration
V
CC
RFC (Optional)
R
bias
C
block
RF IN
1
2
4
3
V
d
= 5.5 V
C
block
RF OUT
5965-9675E
6-96
INA-02184, -02186 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3,4]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
50 mA
400 mW
+13 dBm
+150°C
–65 to 150°C
Thermal Resistance
[2]
:
θ
jc
= 90°C/W — INA-02184
θ
jc
= 100°C/W — INA-02186
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 11.1 mW/°C for T
C
>
144°C for INA-02184.
4. Derate at 10 mW/°C for T
C
> 110°C
for INA-02186.
INA-02184, -02186 Electrical Specifications
[1]
, T
A
= 25°C
G
P
∆G
P
f
3 dB
ISO
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
[2]
Reverse Isolation (|S
12
|
2
)
Input VSWR (Max over Freq. Range)
Output VSWR (Max over Freq. Range)
50
Ω
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 0.01 to 1.0 GHz
f = 0.01 to 1.0 GHz
f = 0.01 to 1.0 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
dB
dBm
dBm
psec
V
mV/°C
f = 0.5 GHz
f = 0.01 to 1.0 GHz
dB
dB
GHz
dB
INA-02184
INA-02186
Symbol Parameters and Test Conditions: I
d
= 35 mA, Z
O
= 50
Ω
Units Min. Typ. Max. Min. Typ. Max.
29.0 31.0
±
2.0
0.8
39
1.5
1.7
2.0
11
23
330
4.0
5.5
+10
7.0
4.0
29.0 31.0
±
2.0
0.8
39
2.0
1.7
2.0
11
23
350
5.5
+10
7.0
Notes:
1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 10 MHz Gain (G
P
).
INA-02184, -02186 Part Number Ordering Information
Part Number
INA-02184-TR1
INA-02184-BLK
INA-02186-TR1
INA-02186-BLK
No. of Devices
1000
100
1000
100
Container
7" Reel
Antistatic Bag
7" Reel
Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-97
INA-02184, -02186 Typical Performance, T
A
= 25°C
(unless otherwise noted)
35
Gain Flat to DC
40
30
3.0
I
d
(mA)
30
3.5
50
T
C
= +85°C
T
C
= +25°C
T
C
= –25°C
G
p
(dB)
35
0.1 GHz
0.5 GHz
30
1.0 GHz
1.5 GHz
NF (dB)
G
p
(dB)
25
2.5
25
20
20
2.0
10
20
15
.01 .02
.05
0.1 0.2
0.5
1.0
FREQUENCY (GHz)
1.5
2.0
0
0
2
4
V
d
(V)
6
8
15
20
30
I
d
(mA)
40
50
Figure 1. Typical Gain and Noise Figure
vs. Frequency, T
A
= 25°C, I
d
= 35 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
15
32
G
p
(dB)
31
P
1 dB
(dBm)
P
1 dB
(dBm)
30
P
1 dB
13
11
2.5
NF
NF (dB)
2.0
9
G
p
I
d
= 40 mA
12
3.5
3.0
I
d
= 35 mA
NF (dB)
9
I
d
= 30 mA
6
2.0
3
I
d
= 30 to 40 mA
2.5
1.5
–55
–25
+25
+85
+125
0
.02
.05
0.1
0.2
0.5
1.0
2.0
1.5
.02
.05
0.1
0.2
0.5
1.0
2.0
TEMPERATURE (°C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power and 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature, f = 0.5 GHz, I
d
= 35 mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
2.00:1
INA-02184
INA-02186
1.75:1
2.00:1
INA-02184
INA-02186
1.75:1
1.50:1
1.50:1
1.25:1
1.25:1
1.00:1
.02
.05
0.1
0.2
0.5
1.0
2.0
1.00:1
.02
.05
0.1
0.2
0.5
1.0
2.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 7. Input VSWR vs. Frequency,
I
d
= 35 mA.
Figure 8. Output VSWR vs. Frequency,
I
d
= 35 mA.
6-98
Typical INA-02184 Scattering Parameters (Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 35 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
k
0.01
0.05
0.10
0.20
0.30
0.40
0.50
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
2.50
3.00
3.50
4.00
.09
.09
.10
.13
.15
.18
.19
.20
.19
.17
.15
.15
.16
.18
.19
.23
.27
.30
.33
–176
–171
–163
–159
–161
–168
–175
179
166
159
159
163
168
168
165
159
150
143
133
31.9
31.9
31.8
31.7
31.4
31.2
31.0
30.7
29.9
28.4
26.8
24.8
22.6
20.7
18.8
14.9
11.5
8.8
6.6
39.33
39.24
39.07
38.30
37.30
36.42
35.40
34.20
31.21
26.36
21.89
17.36
13.59
10.86
8.71
5.56
3.76
2.74
2.14
–1
–6
–13
–26
–39
–51
–63
–75
–101
–126
–149
–169
175
161
149
127
106
89
73
–40.0
–41.9
–40.9
–40.0
–38.4
–39.2
–40.0
–37.1
–38.4
–36.5
–34.0
–33.2
–31.4
–31.1
–30.2
–29.1
–27.1
–26.0
–25.0
.010
.008
.009
.010
.012
.011
.010
.014
.012
.015
.020
.022
.027
.028
.031
.035
.044
.050
.056
1
–12
1
15
16
32
34
35
38
53
56
62
67
61
64
56
65
57
62
.25
.25
.25
.23
.22
.21
.21
.21
.24
.24
.22
.18
.14
.11
.08
.05
.04
.04
.05
–1
–4
–8
–13
–17
–15
–16
–17
–26
–41
–60
–78
–93
–108
–125
–167
156
137
137
1.40
1.66
1.52
1.44
1.29
1.39
1.52
1.24
1.44
1.40
1.31
1.50
1.50
1.74
1.92
2.54
2.89
3.39
3.78
Typical INA-02186 Scattering Parameters (Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 35 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
k
0.01
0.05
0.10
0.20
0.30
0.40
0.50
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
2.50
3.00
3.50
4.00
.09
.09
.11
.14
.18
.22
.25
.28
.31
.30
.27
.24
.21
.20
.20
.23
.27
.31
.34
–178
–172
–160
–153
–156
–161
–169
–177
165
148
135
129
128
129
131
133
130
124
118
31.5
31.5
31.5
31.4
31.3
31.2
31.1
30.9
30.2
28.8
27.0
24.7
22.5
20.4
18.4
14.5
11.2
8.3
6.1
37.38
37.55
37.46
37.04
36.62
36.20
35.70
34.94
32.34
27.64
22.26
17.22
13.27
10.42
8.34
5.29
3.61
2.60
2.02
–1
–6
–13
–25
–37
–49
–61
–74
–101
–129
–153
–173
170
156
144
123
103
86
70
–40.0
–37.7
–39.2
–40.9
–38.4
–37.7
–39.2
–38.4
–36.5
–34.4
–32.4
–31.1
–31.4
–29.1
–29.1
–27.1
–25.7
–24.4
–23.4
.010
.013
.011
.009
.012
.013
.011
.012
.015
.019
.024
.028
.027
.035
.035
.044
.052
.060
.068
1
11
8
15
1
28
42
44
52
57
62
61
62
61
63
59
63
64
58
.24
.24
.23
.22
.21
.19
.18
.16
.15
.12
.09
.07
.04
.02
.01
.02
.02
.02
.01
–1
–5
–9
–17
–25
–30
–35
–39
–47
–59
–70
–80
–82
–83
–20
30
27
34
30
1.46
1.22
1.37
1.60
1.30
1.25
1.40
1.33
1.20
1.15
1.15
1.23
1.52
1.50
1.79
2.15
2.56
2.97
3.28
6-99
Emitter Inductance and
Performance
As a direct result of their circuit
topology, the performance of INA
MMICs is extremely sensitive to
groundpath (“emitter”) induc-
tance. The two stage design
creates the possibility of a feed-
back loop being formed through
the ground returns of the stages. If
the path to ground provided by
the external circuit is “long” (high
in impedance) compared to the
path back through the ground
return of the other stage, then
instability can occur (see Fig. 1).
This phenomena can show up as a
“peaking” in the gain versus
frequency response (perhaps
creating a negative gain slope
amplifier), an increase in input
VSWR, or even as return gain (a
reflection coefficient greater than
unity) at the input of the MMIC.
The “bottomline” is that
excellent
grounding is critical
when
using INA MMICs. The use of
plated through holes or equivalent
minimal path ground returns
at
the device
is essential. An
appropriate layout is shown in
Figure 2. A corollary is that
designs should be done on the
thinnest practical substrate. The
parasitic inductance of a pair of
via holes passing through 0.032"
thick P.C. board is approximately
0.1 nH, while that of a pair of via
holes passing through 0.062" thick
board is close to 0.5 nH. HP does
not recommend using INA family
MMICs on boards thicker than
32 mils.
These stability effects are entirely
predictable. A circuit simulation
using the data sheet S-parameters
and including a description of the
ground return path (via model or
equivalent “emitter” inductance)
will give an accurate picture of the
performance that can be ex-
pected. Device characterizations
are made with the ground leads of
the MMIC directly contacting a
solid copper block (system
ground) at a distance of 2 to 4 mils
from the body of the package.
Thus the information in the data
sheet is a true description of the
performance capability of the
MMIC, and contains minimal
contributions from fixturing.
Figure 1. INA Potential
Ground Loop.
Figure 2. INA Circuit Board 2x
Actual Size.
6-100
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