Ordering number : ENN7548
FW250
N-Channl Silicon MOSFET
FW250
Ultrahigh-Speed Switching Applications
Features
•
•
•
Package Dimensions
unit : mm
2129
[FW250]
8
5
0.3
4.4
6.0
Low ON-resistance.
Ultrahigh-speed switcing.
4V drive.
5.0
1.5
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤100ms)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
ID
ID
IDP
PD
PT
Tch
Tstg
duty cycle≤1%
duty cycle≤1%
0.595
1.27
0.43
0.1
1.8max
1
4
0.2
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
Conditions
Ratings
60
±20
3
3.5
5.5
20
1.8
2.2
150
--55 to +150
2
Unit
V
V
A
A
A
A
W
W
°C
°C
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board(2000mm
2
!0.8mm)1unit,
PW≤10s
Mounted on a ceramic board(2000mm
!0.8mm),
PW≤10s
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Conditions
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS=
±16V,
VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=3A
ID=3A, VGS=10V
ID=1.5A, VGS=4V
Ratings
min
60
1
±10
1.2
2.8
4
110
150
145
215
2.6
typ
max
Unit
V
µ
A
µ
A
V
S
mΩ
mΩ
Marking : W250
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91603 TS IM TA-100553 No.7548-1/4
FW250
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=30V, VGS=10V, ID=3A
VDS=30V, VGS=10V, ID=3A
VDS=30V, VGS=10V, ID=3A
IS=3A, VGS=0
Ratings
min
typ
300
54
34
8
23
30
40
7.8
2.4
1.7
0.86
1.2
max
Unit
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VIN
10V
0V
VIN
ID=3A
RL=10Ω
VDD=30V
D
PW=10µs
D.C.≤1%
VOUT
G
FW250
P.G
50Ω
S
3.0
ID -- VDS
.0V
10
V
8.0
V
6
ID -- VGS
Ta=
--25
°
1.0
1.5
2.0
2.5
Drain Current, ID -- A
2.0
Drain Current, ID -- A
5
V
.0V
6.0
VG
4
1.5
4.0
3
1.0
2
0.5
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
IT06041
0
0
0.5
2.5
3.0
3.5
4.0
Drain-to-Source Voltage, VDS -- V
300
280
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
300
25
°
C
Ta=
75
°
C
--25
°
C
IT06042
RDS(on) -- Ta
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
--60
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0
2
4
6
8
10
12
14
16
ID=1.5A
3A
1.
I D=
5
=4V
V GS
A,
3
I D=
V
=10
, VGS
.0A
--40
--20
0
20
40
60
80
100
120
25
°
C
140
IT06044
.
=3
S
5V
5
Gate-to-Source Voltage, VGS -- V
IT06043
Ambient Temperature, Ta --
°C
No.7548-2/4
75
°
VDS=10V
C
C
FW250
10
y
fs -- ID
VDS=10V
¡
C
Forward Transfer Admittance,
y
fs -- S
7
5
3
2
10
7
5
IF -- VSD
VGS=0
Forward Drain Current, IF -- A
25
Ta
-25
=-
¡
C
3
2
1.0
7
5
3
2
0.1
7
5
3
2
1.0
7
5
3
2
0.1
0.01
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Drain Current, ID -- A
100
7
5 7 10
IT06045
1000
0
0.2
0.4
Ta=7
5
¡
C
25
¡
C
--25
¡
C
0.6
0.8
75
¡
C
1.0
1.2
IT06046
SW Time -- ID
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
5
3
2
VDD=30V
VGS=10V
td(off)
tf
7
5
Ciss, Coss, Crss -- pF
3
2
Ciss
10
7
5
3
2
td(on)
tr
100
7
5
3
2
Coss
Crss
1.0
0.1
10
2
3
5
7
1.0
2
3
5
Drain Current, ID -- A
10
9
10
IT06047
5
7
0
10
20
30
40
50
60
IT06048
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
ASO
Gate-to-Source Voltage, VGS -- V
VDS=30V
ID=3A
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
IDP=20A
≤10µs
8
10
ID=3A
Drain Current, ID -- A
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
10
1m
0
µ
s
s
10
10
Operation in this area
is limited by RDS(on).
ms
s
10
s
DC
op
era
tio
0m
n
0.01
0.1
Ta=25°C
Single pulse
Mounted on a ceramic board(2000mm
2
!0.8mm)
1unit
2
3
5 7 1.0
2
3
5 7 10
2
3
Total Gate Charge, Qg -- nC
2.5
IT06049
PD -- Ta
Mounted on a ceramic board(2000mm
2
!0.8mm),
PW≤10s
Drain-to-Source Voltage, VDS -- V
5 7 100
IT06050
Allowable Power Dissipation, PD -- W
2.2
2.0
1.8
1.5
To
t
di
ss
1 u
ipa
nit
tio
al
n
1.0
0.5
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT06051
No.7548-3/4
FW250
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2003. Specifications and information herein are subject
to change without notice.
PS No.7548-4/4
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
