Ordering number : ENN7006
FW138
P-Channel Silicon MOSFET
FW138
Load Switching Applications
Features
•
•
Package Dimensions
unit : mm
2129
[FW138]
8
5
0.3
4.4
6.0
4V drive.
Low ON-resistance.
5.0
1.5
0.1
1.8max
1
4
0.2
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
0.595
1.27
0.43
Conditions
Ratings
-
-30
±20
--4
Unit
V
V
A
A
W
W
°C
°C
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (1500mm
2
!0.8mm)
1unit
Mounted on a ceramic board (1500mm
2
!0.8mm)
-
-32
1.7
2.0
150
--55 to +150
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
Conditions
ID=--1mA, VGS=0
VDS=-
-30V, VGS=0
VGS=±16V, VDS=0
VDS=-
-10V, ID=--1mA
VDS=-
-10V, ID=--4A
Ratings
min
--30
--1
±10
--1.0
4
5.8
--2.4
typ
max
Unit
V
µA
µA
V
S
Marking : W138
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71001 TS IM TA-2941 No.7006-1/4
FW138
Continued from preceding page.
Parameter
Symbol
RDS(on) 1
RDS(on) 2
RDS(on) 3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--4A, VGS=--10V
ID=--2A, VGS=--4.5V
ID=--2A, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=--10V, VGS=--10V, ID=-
-4A
VDS=--10V, VGS=--10V, ID=-
-4A
VDS=--10V, VGS=--10V, ID=-
-4A
IS=--4A, VGS=0
Ratings
min
typ
64
94
104
560
150
95
9
18
55
60
12
2
2
--0.85
--1.5
max
84
132
146
Unit
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.≤1%
VDD= --15V
Electrical Connection
(Top view)
D1
D1
D2
D2
ID= --4A
RL=3.75Ω
D
VOUT
G
FW138
P.G
50Ω
S
S1
G1
S2
G2
--6
ID -- VDS
.5V
.0
V
.0V
--6
.0V
--10
--9
ID -- VGS
VDS= --10V
Ta=
--25
°
C
75
°
C
--7
Drain Current, ID -- A
--4
Drain Current, ID -- A
--6
--5
--4
--3
--2
--3
--2
--2.5V
25
°
C
Ta
=
--1
0
0
--0.1
--0.2 --0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
0
0
--0.5
--1.0
--1.5
--2.0
--2
5
VGS= --2.0V
Drain-to-Source Voltage, VDS -- V
200
--1
°
C
75
°
C
--2.5
--3.0
--3.5
25
°
--4.0
IT02845
140
160
IT02847
V
--3.0
IT02844
200
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
150
150
--4.0A
100
ID= --2.0A
100
50
50
4.0V
V
= --
4.5
S
= --
A, VG
GS
--2.0
A, V
=
2.0
ID
--
I D=
V
--10.0
S=
V
4.0A, G
I D= --
0
0
--2
--4
--6
--8
--10
--12
--14
--16
--18
--20
0
--60
--40
--20
0
20
40
60
80
100
120
Gate-to-Source Voltage, VGS -- V
IT02846
Ambient Temperature, Ta --
°C
No.7006-2/4
C
--5
--
V
3.5
--4
--4
--8
FW138
Forward Transfer Admittance,
yfs
-- S
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
IT02848
1000
y
fs -- ID
VDS= --10V
--10
7
5
3
2
IF -- VSD
VGS=0
Forward Current, IF -- A
--1.0
7
5
3
2
--0.1
7
5
3
2
--
Ta=
C
75
°
C
25
°
25
°
C
Ta=
75
°
C
25
°
C
0
--0.2
--0.4
--0.001
--0.6
--0.8
--1.0
--1.2
IT02849
Drain Current, ID -- A
1000
7
5
SW Time -- ID
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Diode Forward Voltage, VSD -- V
VDD= --15V
VGS= --10V
Ciss, Coss, Crss -- pF
7
5
3
2
Switching Time, SW Time -- ns
3
2
100
7
5
3
2
10
7
5
3
2
1.0
--0.1
2
3
5
td(off)
tf
Coss
Crss
100
7
5
3
2
td(on)
tr
10
7
--1.0
2
3
5
7
--10
0
--5
--10
--15
--20
IT02851
Drain Current, ID -- A
--12
IT02850
--100
7
5
3
2
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
ASO
Gate-to-Source Voltage, VGS -- V
VDS= --10V
ID= --4A
--10
IDP= --32A
--25
°
C
--0.01
7
5
3
2
<10µs
1m
s
Drain Current, ID -- A
--8
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
100µs
ID= --4A
DC
op
era
10
0m
tio
10
ms
s
--6
--4
Operation in
this area is
limited by RDS(on).
n(
Ta
=
25
°
C
)
--2
0
0
2
4
6
8
10
12
14
IT02852
--0.01
--0.01 2 3
Ta=25°C
Single pulse
Mounted on a ceramic board(1500mm
2
!0.8mm)1unit
5 7--0.1 2 3
5 7 --1.0 2 3
5 7 --10
2 3
Total Gate Charge, Qg -- nC
2.5
Drain-to-Source Voltage, VDS -- V
5 7--100
IT03266
PD -- Ta
Mounted on a ceramic board(1500mm
2
!0.8mm)
Allowable Power Dissipation, PD -- W
2.0
1.7
1.5
To
ta
1u
l di
nit
ssi
pa
tio
1.0
n
0.5
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT03267
No.7006-3/4
FW138
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2001. Specifications and information herein are subject
to change without notice.
PS No.7006-4/4
模拟与混合信号
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