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MBD3057-T80

产品描述Tunnel Diode, 0.11V V(F) @Ipeak, 0.4mA Ipeak, Germanium, HERMETIC SEALED, CERAMIC, T80, 2 PIN
产品类别分立半导体    二极管   
文件大小675KB,共8页
制造商Cobham Semiconductor Solutions
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MBD3057-T80概述

Tunnel Diode, 0.11V V(F) @Ipeak, 0.4mA Ipeak, Germanium, HERMETIC SEALED, CERAMIC, T80, 2 PIN

MBD3057-T80规格参数

参数名称属性值
厂商名称Cobham Semiconductor Solutions
包装说明O-CEMW-N2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
配置SINGLE
最大二极管电容0.7 pF
二极管元件材料GERMANIUM
最大二极管正向电阻12 Ω
二极管类型TUNNEL DIODE
最大正向电压 (VF)0.11 V
JESD-30 代码O-CEMW-N2
元件数量1
端子数量2
最高工作温度110 °C
最低工作温度-65 °C
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状ROUND
封装形式MICROWAVE
最大峰点电流
表面贴装YES
技术TUNNEL
端子形式NO LEAD
端子位置END
Base Number Matches1

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Planar Back (Tunnel) Diodes
MBD Series
Description
The MDB series of back (tunnel) diodes are fabricated
on germanium substrates using passivated, planar
construction and gold metallization for reliable operation up
to +110 °C. Unlike the standard tunnel diode I
P
is minimized
for detector operation and offered in five nominal values
with varying degrees of sensitivity and video impedance.
The back detector is generally operated with zero bias and
is known for its exellent temperature stability and fast video
rise times.
Features
Zero bias operation
Exellent temperature stability
Low Video Impedance
Screening per MIL-PRF-19500
and MIL-PRF-35834 available.
Absolute Maximum Ratings
Parameters
Input Power
Operating Temperature
Storage Temperature
Soldering Temperature
Chip
Packaged
Rating
+1 dBm CW or Pulsed in a tuned detector
4
-65
°C
to +1
°C
10
-65
°C
to +1
°C
25
See chip assembly instructions on page 8
+230
°C
for 5 seconds (must be hand soldered)
Chip
Electrical Specifications,
T
A
= 25
°C
I
P
C
J
MAX
μA
200
300
400
500
600
γ
TYP
mV / mW
1,000
750
500
275
250
R
V
TYP
Ω
180
1
30
80
65
60
I
P
/ I
V
MIN
2.5
2.5
2.5
2.5
2.5
V
R
MIN
mV
420
410
400
400
400
I
R
=
500
μA
V
F
MAX
mV
1
35
1
30
1
25
1
20
1
10
I
F
= 3 mA
Model
MBD1057-C18
MBD2057-C18
MBD3057-C18
MBD4057-C18
MBD5057-C18
Test Conditions
MIN
μA
100
200
300
400
500
MAX
pF
0.30
0.30
0.30
0.30
0.30
V
R
= V
V
F=
100 MHz
Package
C18
C18
C18
C18
C18
P
IN
= -20 dBm
R
L
= 10 KΩ F = 10 GHz
Revision Date: 1
2/01/05

 
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