Silicon Junction FETs (Small Signal)
2SK0662
(2SK662)
Silicon N-Channel Junction FET
For low-frequency amplification
unit: mm
(0.425)
I
Features
0.3
+0.1
–0.0
3
0.15
+0.10
–0.05
G
High mutual conductance g
m
G
Low noise type
G
S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
1.25
±0.10
2.1
±0.1
5°
1
2
(0.65) (0.65)
1.3
±0.1
I
Absolute Maximum Ratings
(Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
Symbol
V
DSX
V
GDO
I
D
I
G
P
D
T
j
T
stg
Ratings
30
−30
20
10
150
125
−55
to +125
Unit
V
V
mA
mA
mW
°C
°C
2.0
±0.2
10°
1: Source
2: Drain
3: Gate
0 to 0.1
0.9
±0.1
0.9
+0.2
–0.1
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol (Example): 1O
❘I
Electrical Characteristics
(Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Source cut-off voltage
Mutual conductance
Symbol
I
DSS*
I
GSS
V
GSC
g
m
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
=
−30V,
V
DS
= 0
V
DS
= 10V, I
D
= 10µA
V
DS
= 10V, I
D
= 0.5mA, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 30V, I
D
= 1mA, G
V
= 80dB
R
g
= 100kΩ, Function = FLAT
−
0.1
4
4
14
3.5
60
min
0.5
typ
max
12
−100
−1.5
Unit
mA
nA
V
mS
pF
pF
m
V
Input capacitance (Common Source) C
iss
Reverse transfer capacitance (Common Source) C
rss
Noise figure
NV
*
I
DSS
rank classification
Runk
I
DSS
(mA)
P
0.5 to 3
1OP
Q
2 to 6
1OQ
R
4 to 12
1OR
Marking Symbol
Note) The part number in the parenthesis shows conventional part number.
0.2
±0.1
251
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