HUFA76407P3
Data Sheet
December 2001
12A, 60V, 0.107 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
Features
• Ultra Low On-Resistance
- r
DS(ON)
= 0.092Ω,
V
GS
=
10V
- r
DS(ON)
= 0.107Ω,
V
GS
=
5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
DRAIN
(FLANGE)
HUFA76407P3
Symbol
D
• UIS Rating Curve
• Switching Time vs R
GS
Curves
G
Ordering Information
S
PART NUMBER
HUFA76407P3
PACKAGE
TO-220AB
BRAND
76407P
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HUFA76407P3
UNITS
V
V
V
A
A
A
A
60
60
±16
12
13
6
6
Figure 4
Figures 6, 17, 18
38
0.25
-55 to 175
300
260
W
W/
o
C
o
C
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 135
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 135
o
C, V
GS
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTE:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA76407P3 Rev. B
HUFA76407P3
]
Electrical Specifications
PARAMETER
OFF STATE SPECIFICATIONS
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
DSS
I
GSS
V
GS(TH)
r
DS(ON)
I
D
= 250µA, V
GS
= 0V (Figure 12)
I
D
= 250µA, V
GS
= 0V , T
C
= -40
o
C (Figure 12)
V
DS
= 55V, V
GS
= 0V
V
DS
= 50V, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±16V
V
GS
= V
DS
, I
D
= 250µA (Figure 11)
I
D
= 13A, V
GS
= 10V (Figures 9, 10)
I
D
= 8A, V
GS
= 5V (Figure 9)
I
D
= 8A, V
GS
= 4.5V (Figure 9)
60
55
-
-
-
-
-
-
-
-
-
-
1
250
±100
V
V
µA
µA
nA
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
1
-
-
-
-
0.077
0.095
0.107
3
0.092
0.107
0.117
V
Ω
Ω
Ω
o
C/W
o
C/W
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
R
θJC
R
θJA
TO-220
-
-
-
-
3.94
62
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 30V,
I
D
= 8A,
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
V
DD
= 30V, I
D
= 13A
V
GS
=
10V,
R
GS
= 32Ω
(Figures 16, 21, 22)
V
DD
= 30V, I
D
= 8A
V
GS
=
4.5V, R
GS
= 32Ω
(Figures 15, 21, 22)
-
-
-
-
-
-
-
8
105
22
39
-
170
-
-
-
-
92
ns
ns
ns
ns
ns
ns
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
-
350
105
23
-
-
-
pF
pF
pF
-
-
-
-
-
9.4
5.2
.36
1.2
2.5
11.3
6.2
.43
-
-
nC
nC
nC
nC
nC
-
-
-
-
-
-
-
5
32
43
45
-
56
-
-
-
-
132
ns
ns
ns
ns
ns
ns
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
SYMBOL
V
SD
t
rr
Q
RR
I
SD
= 8A
I
SD
= 4A
Reverse Recovery Time
Reverse Recovered Charge
I
SD
= 8A, dI
SD
/dt = 100A/µs
I
SD
= 8A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
-
-
TYP
-
-
-
-
MAX
1.25
1.0
66
159
UNITS
V
V
ns
nC
©2001 Fairchild Semiconductor Corporation
HUFA76407P3 Rev. B
HUFA76407P3
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
10
V
GS
= 4.5V
15
V
GS
= 10V
5
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1
THERMAL IMPEDANCE
Z
θJC
, NORMALIZED
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
SINGLE PULSE
0.01
10
-5
10
-4
10
-3
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
0
10
1
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
200
I
DM
, PEAK CURRENT (A)
100
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
V
GS
= 5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-5
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
10
FIGURE 4. PEAK CURRENT CAPABILITY
©2001 Fairchild Semiconductor Corporation
HUFA76407P3 Rev. B
HUFA76407P3
Typical Performance Curves
100
I
AS
, AVALANCHE CURRENT (A)
(Continued)
100
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= 25
o
C
10
STARTING T
J
= 150
o
C
I
D
, DRAIN CURRENT (A)
10
100µs
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
SINGLE PULSE
T
J
= MAX RATED T
C
= 25
o
C
1ms
10ms
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
200
1
0.001
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
I
D
, DRAIN CURRENT (A)
15
V
GS
= 10V
12
V
GS
= 5V
V
GS
= 4V
12
I
D,
DRAIN CURRENT (A)
9
9
V
GS
= 3.5V
6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3
T
c
= 25
o
C
0
1
2
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
4
6
T
J
= 25
o
C
3
T
J
= 175
o
C
0
2
3
T
J
= -55
o
C
0
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
150
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (mΩ)
I
D
= 3A
I
D
= 12A
I
D
= 5A
120
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
90
1.0
V
GS
= 10V, I
D
= 13A
0.5
-80
-40
0
40
80
120
160
200
60
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HUFA76407P3 Rev. B
HUFA76407P3
Typical Performance Curves
1.2
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
V
GS
= V
DS
, I
D
= 250µA
NORMALIZED GATE
THRESHOLD VOLTAGE
(Continued)
1.2
I
D
= 250µA
1.0
1.1
0.8
1.0
0.6
-80
-40
0
40
80
120
160
o
C)
T
J
, JUNCTION TEMPERATURE (
200
0.9
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DD
= 30V
8
1000
C
ISS
= C
GS
+ C
GD
C, CAPACITANCE (pF)
6
100
C
OSS
@ C
DS
+ C
GD
4
2
V
GS
= 0V, f = 1MHz
10
0.1
C
RSS
= C
GD
60
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 12A
I
D
= 5A
I
D
= 3A
0
2
4
6
Q
g
, GATE CHARGE (nC)
8
10
0
1.0
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
150
V
GS
= 4.5V, V
DD
= 30V, I
D
= 6A
SWITCHING TIME (ns)
t
r
100
SWITCHING TIME (ns)
80
V
GS
= 10V, V
DD
= 30V, I
D
= 12A
60
40
t
f
20
t
r
t
f
50
t
d(OFF)
t
d(ON)
0
0
10
20
30
40
50
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
t
d(OFF)
t
d(ON)
0
0
10
20
30
40
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
50
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
©2001 Fairchild Semiconductor Corporation
HUFA76407P3 Rev. B
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