HUFA75542P3, HUFA75542S3S
Data Sheet
December 2001
75A, 80V, 0.014 Ohm, N-Channel,
UltraFET® Power MOSFETs
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
JEDEC TO-263AB
Features
• Ultra Low On-Resistance
- r
DS(ON)
= 0.014Ω, V
GS
=
10V
GATE
SOURCE
DRAIN (FLANGE)
HUFA75542P3
DRAIN
(FLANGE)
HUFA75542S3S
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Symbol
D
Ordering Information
PART NUMBER
HUFA75542P3
PACKAGE
TO-220AB
TO-263AB
BRAND
75542P
75542S
G
HUFA75542S3S
S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA75542S3ST.
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HUFA75542P3, HUFA75542S3S
UNITS
V
V
V
A
A
80
80
±20
75
58
Figure 4
Figures 6, 14, 15
230
1.54
-55 to 175
300
260
W
W/
o
C
o
C
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTE:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA75542P3, HUFA75542S3S Rev. B
HUFA75542P3, HUFA75542S3S
Electrical Specifications
PARAMETER
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
I
D
= 250µA, V
GS
= 0V (Figure 11)
V
DS
= 75V, V
GS
= 0V
V
DS
= 70V, V
GS
= 0V, T
C
= 150
o
C
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
R
θJC
R
θJA
TO-220 and TO-263
-
-
-
-
0.65
62
o
C/W
o
C/W
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
80
-
-
-
-
-
-
-
-
1
250
±100
V
µA
µA
nA
I
GSS
V
GS
=
±20V
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250µA (Figure 10)
I
D
= 75A, V
GS
= 10V (Figure 9)
2
-
-
0.012
4
0.014
V
Ω
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain "Miller" Charge
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
-
-
-
2750
700
250
-
-
-
pF
pF
pF
Q
g(TOT)
Q
g(10)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 20V
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 40V,
I
D
= 75A,
I
g(REF)
= 1.0mA
(Figures 13, 16, 17)
-
-
-
-
-
150
80
5.7
15
33
180
96
7
-
-
nC
nC
nC
nC
nC
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 40V, I
D
= 75A
V
GS
=
10V,
R
GS
= 3.9Ω
(Figures 18, 19)
-
-
-
-
-
-
-
12.5
117
50
80
-
195
-
-
-
-
195
ns
ns
ns
ns
ns
ns
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
SYMBOL
V
SD
I
SD
= 75A
I
SD
= 37.5A
Reverse Recovery Time
Reverse Recovered Charge
t
rr
Q
RR
I
SD
= 75A, dI
SD
/dt = 100A/µs
I
SD
= 75A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
-
-
TYP
-
-
-
-
MAX
1.25
1.00
102
255
UNITS
V
V
ns
nC
©2001 Fairchild Semiconductor Corporation
HUFA75542P3, HUFA75542S3S Rev. B
HUFA75542P3, HUFA75542S3S
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
80
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
2
1
THERMAL IMPEDANCE
Z
θJC
, NORMALIZED
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
0.1
P
DM
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-3
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
10
0
SINGLE PULSE
0.01
10
-5
10
-4
60
40
20
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
t
1
t
2
10
1
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
1000
T
C
= 25
o
C
I
DM
, PEAK CURRENT (A)
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
V
GS
= 10V
100
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
50
10
-5
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
FIGURE 4. PEAK CURRENT CAPABILITY
©2001 Fairchild Semiconductor Corporation
HUFA75542P3, HUFA75542S3S Rev. B
HUFA75542P3, HUFA75542S3S
Typical Performance Curves
500
I
AS
, AVALANCHE CURRENT (A)
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
100
100µs
(Continued)
1000
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
I
D
, DRAIN CURRENT (A)
100
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
10
1ms
10ms
1
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
0.001
100
200
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
150
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
150
V
GS
= 20V
V
GS
= 10V
V
GS
= 7V
V
GS
= 6V
I
D
, DRAIN CURRENT (A)
90
I
D
, DRAIN CURRENT (A)
120
120
90
V
GS
= 5V
60
60
T
J
= 175
o
C
30
T
J
= 25
o
C
30
T
J
= -55
o
C
0
4
5
6
0
1
2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
3
4
0
2
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
2.5
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
NORMALIZED GATE
THRESHOLD VOLTAGE
1.2
V
GS
= V
DS
, I
D
= 250µA
1.0
1.5
V
GS
= 10V, I
D
= 75A
1.0
0.8
0.6
0.5
-80
-40
0
40
80
120
160
200
0.4
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HUFA75542P3, HUFA75542S3S Rev. B
HUFA75542P3, HUFA75542S3S
Typical Performance Curves
1.2
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
I
D
= 250µA
C, CAPACITANCE (pF)
1.1
(Continued)
10000
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
1.0
1000
C
OSS
≅
C
DS
+ C
GD
0.9
C
RSS
=
C
GD
0.8
-80
-40
0
40
80
120
160
200
100
0.1
1
10
80
T
J
, JUNCTION TEMPERATURE (
o
C)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DD
= 40V
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 75A
I
D
= 50A
I
D
= 25A
0
20
40
60
80
100
2
0
Q
g
, GATE CHARGE (nC)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
©2001 Fairchild Semiconductor Corporation
HUFA75542P3, HUFA75542S3S Rev. B
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