HUF76609D3, HUF76609D3S
Data Sheet
October 1999
File Number
4688.2
10A, 100V, 0.165 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
Packaging
JEDEC TO-251AA
DRAIN
(FLANGE)
Features
JEDEC TO-252AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
• Ultra Low On-Resistance
- r
DS(ON)
= 0.160Ω,
V
GS
=
10V
- r
DS(ON)
= 0.165Ω,
V
GS
=
5V
• Simulation Models
- Temperature Compensated PSPICE
®
and SABER
©
Electrical Models
- Spice and SABER
©
Thermal Impedance Models
- www.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
GATE
SOURCE
HUF76609D3
HUF76609D3S
Symbol
D
• Switching Time vs R
GS
Curves
Ordering Information
PART NUMBER
PACKAGE
TO-251AA
TO-252AA
BRAND
76609D
76609D
HUF76609D3
HUF76609D3S
G
S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76609D3ST.
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HUF76609D3,
HUF76609D3S
UNITS
V
V
V
A
A
A
A
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTE:
1. T
J
= 25
o
C to 150
o
C.
100
100
±16
10
10
7
7
Figure 4
Figures 6, 17, 18
49
0.327
-55 to 175
300
260
W
W/
o
C
o
C
o
C
o
C
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER© is a Copyright of Analogy Inc.http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
HUF76609D3, HUF76609D3S
Electrical Specifications
PARAMETER
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
DSS
I
GSS
V
GS(TH)
r
DS(ON)
I
D
= 250µA, V
GS
= 0V (Figure 12)
I
D
= 250µA, V
GS
= 0V, T
C
= -40
o
C (Figure 12)
Zero Gate Voltage Drain Current
V
DS
= 95V, V
GS
= 0V
V
DS
= 90V, V
GS
= 0V, T
C
= 150
o
C
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
GS
= V
DS
, I
D
= 250µA (Figure 11)
I
D
= 10A, V
GS
= 10V (Figures 9, 10)
I
D
= 7A, V
GS
= 5V (Figure 9)
I
D
= 7A, V
GS
= 4.5V (Figure 9)
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
R
θJC
R
θJA
TO-251 and TO-252
-
-
-
-
3.06
100
o
C/W
o
C/W
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
100
90
-
-
-
-
-
-
-
-
-
-
1
250
±100
3
0.160
0.165
0.168
V
V
µA
µA
nA
V
GS
=
±16V
1
-
-
-
-
0.130
0.135
0.140
V
Ω
Ω
Ω
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 50V,
I
D
= 7A,
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
V
DD
= 50V, I
D
= 10A
V
GS
=
10V,
R
GS
= 24Ω
(Figures 16, 21, 22)
V
DD
= 50V, I
D
= 7A
V
GS
=
4.5V, R
GS
= 20Ω
(Figures 15, 21, 22)
-
-
-
-
-
-
-
10
41
30
28
-
77
-
-
-
-
87
ns
ns
ns
ns
ns
ns
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
-
425
75
22
-
-
-
pF
pF
pF
-
-
-
-
-
13
7.3
0.5
1.4
3.4
16
8.8
0.6
-
-
nC
nC
nC
nC
nC
-
-
-
-
-
-
-
6
18
55
39
-
36
-
-
-
-
141
ns
ns
ns
ns
ns
ns
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
SYMBOL
V
SD
t
rr
Q
RR
I
SD
= 7A
I
SD
= 4A
Reverse Recovery Time
Reverse Recovered Charge
I
SD
= 7A, dI
SD
/dt = 100A/µs
I
SD
= 7A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
-
-
TYP
-
-
-
-
MAX
1.25
1.0
92
273
UNITS
V
V
ns
nC
2
HUF76609D3, HUF76609D3S
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
9
V
GS
= 4.5V
6
V
GS
= 10V
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
12
3
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1
THERMAL IMPEDANCE
Z
θJC
, NORMALIZED
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
SINGLE PULSE
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-3
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
10
0
10
1
0.01
10
-5
10
-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
200
I
DM
, PEAK CURRENT (A)
100
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
V
GS
= 5V
10
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
5
10
-5
FIGURE 4. PEAK CURRENT CAPABILITY
3
HUF76609D3, HUF76609D3S
Typical Performance Curves
100
I
AS
, AVALANCHE CURRENT (A)
(Continued)
100
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= 25
o
C
I
D
, DRAIN CURRENT (A)
10
100µs
10
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
1
10
100
1ms
10ms
STARTING T
J
= 150
o
C
0.1
1
300
0.001
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
15
20
V
GS
= 10V
V
GS
= 5V
V
GS
= 3.5V
I
D,
DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
15
V
GS
= 4V
10
10
V
GS
= 3V
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
0
1
2
3
4
5
5
T
J
= 25
o
C
0
1.5
2.0
T
J
= 175
o
C
T
J
= -55
o
C
2.5
3.0
3.5
4.0
0
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
200
I
D
= 10A
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (mΩ)
180
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.5
V
GS
= 10V, I
D
= 10A
2.0
160
I
D
= 4A
140
I
D
= 7A
1.5
120
1.0
100
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.5
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4
HUF76609D3, HUF76609D3S
Typical Performance Curves
1.2
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
V
GS
= V
DS
, I
D
= 250µA
NORMALIZED GATE
THRESHOLD VOLTAGE
1.0
(Continued)
1.2
I
D
= 250µA
1.1
0.8
1.0
0.6
0.4
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
0.9
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
V
GS
, GATE TO SOURCE VOLTAGE (V)
2000
1000
C, CAPACITANCE (pF)
C
ISS
=
C
GS
+ C
GD
C
OSS
≅
C
DS
+ C
GD
100
10
V
DD
= 50V
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 10A
I
D
= 7A
I
D
= 4A
0
3
6
9
12
15
C
RSS
=
C
GD
10
V
GS
= 0V, f = 1MHz
5
0.1
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
0
Q
g
, GATE CHARGE (nC)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
80
V
GS
= 4.5V, V
DD
= 50V, I
D
= 7A
t
r
SWITCHING TIME (ns)
60
t
d(OFF)
40
t
f
SWITCHING TIME (ns)
120
V
GS
= 10V, V
DD
= 50V, I
D
= 10A
90
t
d(OFF)
60
t
f
30
t
r
t
d(ON)
0
20
t
d(ON)
0
0
10
20
30
40
50
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
0
10
20
30
40
50
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
5
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