HUF76423P3, HUF76423S3S
Data Sheet
October 1999
File Number
4708.2
33A, 60V, 0.035 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
Features
JEDEC TO-263AB
DRAIN
(FLANGE)
• Ultra Low On-Resistance
- r
DS(ON)
= 0.030Ω,
V
GS
=
10V
- r
DS(ON)
= 0.035Ω,
V
GS
=
5V
• Simulation Models
- Temperature Compensated PSPICE
®
and SABER
©
Electrical Models
- Spice and SABER
©
Thermal Impedance Models
- www.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
GATE
SOURCE
DRAIN
(FLANGE)
HUF76423P3
HUF76423S3S
Symbol
D
• Switching Time vs R
GS
Curves
Ordering Information
PART NUMBER
PACKAGE
TO-220AB
TO-263AB
BRAND
76423P
76423S
HUF76423P3
HUF76423S3S
G
S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76423S3ST.
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HUF76423P3,
HUF76423S3S
UNITS
V
V
V
A
A
A
A
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 150
o
C.
60
60
±16
33
35
23
22
Figure 4
Figures 6, 17, 18
85
0.567
-55 to 175
300
260
W
W/
o
C
o
C
o
C
o
C
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER© is a Copyright of Analogy Inc. 1-888-INTERSIL or 407-727-9207
|
Copyright
©
Intersil Corporation 1999.
HUF76423P3, HUF76423S3S
Electrical Specifications
PARAMETER
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
DSS
I
GSS
V
GS(TH)
r
DS(ON)
I
D
= 250µA, V
GS
= 0V (Figure 12)
I
D
= 250µA, V
GS
= 0V , T
C
= -40
o
C (Figure 12)
Zero Gate Voltage Drain Current
V
DS
= 55V, V
GS
= 0V
V
DS
= 50V, V
GS
= 0V, T
C
= 150
o
C
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
GS
= V
DS
, I
D
= 250µA (Figure 11)
I
D
= 35A, V
GS
= 10V (Figures 9, 10)
I
D
= 23A, V
GS
= 5V (Figure 9)
I
D
= 22A, V
GS
= 4.5V (Figure 9)
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
R
θJC
R
θJA
TO-220 and TO-263
-
-
-
-
1.76
62
o
C/W
o
C/W
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
60
55
-
-
-
-
-
-
-
-
-
-
1
250
±100
3
0.030
0.035
0.038
V
V
µA
µA
nA
V
GS
=
±16V
1
-
-
-
-
0.025
0.029
0.032
V
Ω
Ω
Ω
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 30V,
I
D
= 23A,
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
V
DD
= 30V, I
D
= 35A
V
GS
=
10V,
R
GS
= 10Ω
(Figures 16, 21, 22)
V
DD
= 30V, I
D
= 22A
V
GS
=
4.5V, R
GS
= 10Ω
(Figures 15, 21, 22)
-
-
-
-
-
-
-
12
147
32
50
-
245
-
-
-
-
125
ns
ns
ns
ns
ns
ns
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
-
1060
315
65
-
-
-
pF
pF
pF
-
-
-
-
-
28
15
1.2
3.5
7
34
18
1.5
-
-
nC
nC
nC
nC
nC
-
-
-
-
-
-
-
7
85
47
76
-
140
-
-
-
-
185
ns
ns
ns
ns
ns
ns
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
SYMBOL
V
SD
t
rr
Q
RR
I
SD
= 23A
I
SD
= 11.5A
Reverse Recovery Time
Reverse Recovered Charge
I
SD
= 23A, dI
SD
/dt = 100A/µs
I
SD
= 23A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
-
-
TYP
-
-
-
-
MAX
1.25
1.0
80
205
UNITS
V
V
ns
nC
2
HUF76423P3, HUF76423S3S
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
40
1.0
I
D
, DRAIN CURRENT (A)
30
V
GS
= 10V
20
V
GS
= 4.5V
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
10
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
Z
θJC
, NORMALIZED
THERMAL IMPEDANCE
DUTY CYCLE - DESCENDING ORDER
0.5
1 0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-3
10
-2
10
-1
10
0
10
1
SINGLE PULSE
0.01
10
-5
10
-4
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
500
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
I = I
25
175 - T
C
150
I
DM
, PEAK CURRENT (A)
100
V
GS
= 5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
20
10
-5
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
FIGURE 4. PEAK CURRENT CAPABILITY
3
HUF76423P3, HUF76423S3S
Typical Performance Curves
300
(Continued)
300
I
AS
, AVALANCHE CURRENT (A)
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
100
I
D
, DRAIN CURRENT (A)
100
100µs
STARTING T
J
= 25
o
C
10
STARTING T
J
= 150
o
C
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
1ms
10ms
1
0.01
0.1
1
10
100
1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
t
AV
, TIME IN AVALANCHE (ms)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
60
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
I
D
, DRAIN CURRENT (A)
60
V
GS
= 10V
V
GS
= 5V
I
D,
DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 4V
45
45
30
T
J
= 175
o
C
15
T
J
= 25
o
C
0
2.0
T
J
= -55
o
C
3.0
3.5
4.0
4.5
5.0
30
V
GS
= 3.5V
15
V
GS
= 3V
2.5
0
0
1
2
3
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
50
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
2.5
I
D
= 35A
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (mΩ)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 35A
2.0
40
I
D
= 25A
I
D
= 15A
30
1.5
1.0
20
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.5
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4
HUF76423P3, HUF76423S3S
Typical Performance Curves
1.2
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
V
GS
= V
DS
, I
D
= 250µA
NORMALIZED GATE
THRESHOLD VOLTAGE
(Continued)
1.2
I
D
= 250µA
1.0
1.1
0.8
1.0
0.6
0.4
-80
-40
0
40
80
120
160
200
0.9
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
V
DD
= 30V
8
3000
C
ISS
=
C
GS
+ C
GD
C, CAPACITANCE (pF)
1000
6
C
OSS
≅
C
DS
+ C
GD
100
4
C
RSS
=
C
GD
V
GS
= 0V, f = 1MHz
2
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 35A
I
D
= 25A
I
D
= 15A
0
5
10
15
20
25
30
0
1
10
60
Q
g
, GATE CHARGE (nC)
20
0.1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
250
V
GS
= 4.5V, V
DD
= 30V, I
D
= 22A
SWITCHING TIME (ns)
200
t
r
SWITCHING TIME (ns)
200
V
GS
= 10V, V
DD
= 30V, I
D
= 35A
150
t
d(OFF)
t
f
t
r
150
t
f
100
t
d(OFF)
50
t
d(ON)
0
0
10
20
30
40
50
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
100
50
t
d(ON)
0
0
10
20
30
40
50
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
5
工作这点儿事
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
