HUF76145P3, HUF76145S3S
Data Sheet
December 2001
75A, 30V, 0.0045 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers,
low-voltage bus switches, and power management in
portable and battery-operated products.
Formerly developmental type TA76145.
Features
• Logic Level Gate Drive
• 75A, 30V
• Ultra Low On-Resistance, r
DS(ON)
= 0.0045Ω
• Temperature Compensating PSPICE
®
Model
• Temperature Compensating SABER
™
Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
HUF76145P3
HUF76145S3S
PACKAGE
TO-220AB
TO-263AB
BRAND
76145P
76145S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF76145S3ST.
Symbol
D
JEDEC TO-263AB
G
S
GATE
SOURCE
DRAIN
(FLANGE)
©2001 Fairchild Semiconductor Corporation
HUF76145P3, HUF76145S3S Rev. B
HUF76145P3, HUF76145S3S
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
30
30
±16
75
75
75
Figure 4
Figure 6
270
2.17
-40 to 150
300
260
W
W/
o
C
o
C
o
C
o
C
V
V
V
A
A
A
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETER
OFF STATE SPECIFICATIONS
T
A
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
I
D
= 250µA, V
GS
= 0V (Figure 12)
V
DS
= 25V, V
GS
= 0V
V
DS
= 25V, V
GS
= 0V, T
C
= 150
o
C
30
-
-
-
-
-
-
-
-
1
250
±100
V
µA
µA
nA
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
I
GSS
V
GS
=
±16V
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250µA (Figure 11)
I
D
= 75A, V
GS
= 10V (Figures 9, 10)
I
D
= 75A, V
GS
= 5V (Figure 9)
I
D
= 75A, V
GS
= 4.5V (Figure 9)
1
-
-
-
-
0.0035
0.0043
0.0046
3
0.0045
0.0058
0.0065
V
Ω
Ω
Ω
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 15V, I
D
≅
75A,
R
L
= 0.20Ω, V
GS
=
4.5V,
R
GS
= 2.5Ω
(Figure 15)
-
-
-
-
-
-
-
26
145
35
39
-
255
-
-
-
-
110
ns
ns
ns
ns
ns
ns
R
θJC
R
θJA
(Figure 3)
TO-220 and TO-263
-
-
-
-
0.46
62
o
C/W
o
C/W
©2001 Fairchild Semiconductor Corporation
HUF76145P3, HUF76145S3S Rev. B
HUF76145P3, HUF76145S3S
Electrical Specifications
PARAMETER
T
A
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
-
-
4900
2520
560
-
-
-
pF
pF
pF
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V,
I
D
≅
75A,
R
L
= 0.20Ω
I
g(REF)
= 1.0mA
(Figure 14)
-
-
-
-
-
130
73
4.65
12.30
40.00
156
88
5.6
-
-
nC
nC
nC
nC
nC
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 15V, I
D
≅
75A,
R
L
= 0.20Ω, V
GS
=
10V,
R
GS
= 2.2Ω
(Figure 16)
-
-
-
-
-
-
-
16
57
53
38
-
110
-
-
-
-
135
ns
ns
ns
ns
ns
ns
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
V
SD
t
rr
Q
RR
I
SD
= 75A
I
SD
= 75A, dI
SD
/dt = 100A/µs
I
SD
= 75A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
-
TYP
-
-
-
MAX
1.25
115
255
UNITS
V
ns
nC
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
60
V
GS
= 4.5V
40
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
0
80
V
GS
= 10V
20
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HUF76145P3, HUF76145S3S Rev. B
HUF76145P3, HUF76145S3S
Typical Performance Curves
2
1
THERMAL IMPEDANCE
Z
θJC
, NORMALIZED
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
SINGLE PULSE
0.01
10
-5
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-3
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
10
0
10
1
(Continued)
10
-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
5000
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I
DM
, PEAK CURRENT (A)
1000
I = I
25
175 - T
C
150
V
GS
= 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-4
V
GS
= 5V
100
50
10
-5
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
FIGURE 4. PEAK CURRENT CAPABILITY
1000
1000
I
AS
, AVALANCHE CURRENT (A)
I
D
, DRAIN CURRENT (A)
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
100µs
100
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
SINGLE PULSE
T
J
= MAX RATED T
C
= 25
o
C
10
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
1ms
10ms
100
10
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
100
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
©2001 Fairchild Semiconductor Corporation
HUF76145P3, HUF76145S3S Rev. B
HUF76145P3, HUF76145S3S
Typical Performance Curves
150
(Continued)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
150
V
GS
= 10V
V
GS
= 5V
V
GS
= 4.5V
90
V
GS
= 4V
60
V
GS
= 3V
V
GS
= 3.5V
I
D
, DRAIN CURRENT (A)
120
120
90
60
150
o
C
30
-40
o
C
25
o
C
0
0
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
30
V
DD
= 15V
0
0
1
2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
3
4
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
20
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
I
D
= 75A
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (mΩ)
15
I
D
= 50A
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 75A
1.5
1.2
5 I
D
= 25A
0.9
0
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.6
-60
0
60
120
180
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.4
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
V
GS
= V
DS
, I
D
= 250µA
NORMALIZED GATE
THRESHOLD VOLTAGE
1.2
1.2
I
D
= 250µA
1.1
1.0
0.8
1.0
0.6
0.4
-60
0
60
120
180
0.9
-60
T
J
, JUNCTION TEMPERATURE (
o
C)
0
60
120
T
J
, JUNCTION TEMPERATURE (
o
C)
180
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HUF76145P3, HUF76145S3S Rev. B
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