CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETER
OFF STATE SPECIFICATIONS
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
I
D
= 250µA, V
GS
= 0V (Figure 12)
V
DS
= 25V, V
GS
= 0V
V
DS
= 25V, V
GS
= 0V, T
C
= 150
o
C
30
-
-
-
-
-
-
-
-
1
250
±100
V
µA
µA
nA
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
I
GSS
V
GS
=
±16V
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250µA (Figure 11)
I
D
= 75A, V
GS
= 10V (Figures 9, 10)
I
D
= 75A, V
GS
= 5V (Figure 9)
I
D
= 75A, V
GS
= 4.5V (Figure 9)
1
-
-
-
-
0.0052
0.0063
0.0068
3
0.0055
0.0075
0.0085
V
Ω
Ω
Ω
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 15V, I
D
≅
75A,
R
L
= 0.2Ω, V
GS
=
4.5V,
R
GS
= 2.5Ω
(Figures 15, 21, 22)
-
-
-
-
-
-
-
22
145
30
18
-
250
-
-
-
-
72
ns
ns
ns
ns
ns
ns
R
θJC
R
θJA
(Figure 3)
TO-220 and TO-263
-
-
-
-
0.55
62
o
C/W
o
C/W
6-167
HUF76143P3, HUF76143S3S
Electrical Specifications
PARAMETER
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
-
-
3900
1600
270
-
-
-
pF
pF
pF
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V,
I
D
≅
75A,
R
L
= 0.2Ω
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
-
-
-
-
-
95
50
3.8
11.70
22.00
114
60
4.6
-
-
nC
nC
nC
nC
nC
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 15V, I
D
≅
75A,
R
L
= 0.2Ω, V
GS
= 10V,
R
GS
= 2.5Ω
(Figures 16, 21, 20)
-
-
-
-
-
-
-
14
55
40
18
-
105
-
-
-
-
87
ns
ns
ns
ns
ns
ns
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
V
SD
t
rr
Q
RR
I
SD
= 75A
I
SD
= 75A, dI
SD
/dt = 100A/µs
I
SD
= 75A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
-
TYP
-
-
-
MAX
1.25
90
170
UNITS
V
ns
nC
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
10
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
80
I
D
, DRAIN CURRENT (A)
60
V
GS
= 10V
40
V
GS
= 4.5V
20
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
6-168
HUF76143P3, HUF76143S3S
Typical Performance Curves
2
1
THERMAL IMPEDANCE
Z
θJC
, NORMALIZED
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
10
0
10
1
(Continued)
SINGLE PULSE
0.01
10
-5
10
-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
2000
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
150 - T
C
125
I
DM
, PEAK CURRENT (A)
1000
V
GS
= 5V
V
GS
= 10V
100
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
50
10
-5
FIGURE 4. PEAK CURRENT CAPABILITY
1000
I
AS
, AVALANCHE CURRENT (A)
T
J
= MAX RATED
T
C
= 25
o
C
I
D
, DRAIN CURRENT (A)
100µs
500
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
100
100
STARTING T
J
= 25
o
C
1ms
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
BV
DSS MAX
= 30V
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
10ms
STARTING T
J
= 150
o
C
1
10
0.001
0.01
1
10
0.1
t
AV
, TIME IN AVALANCHE (ms)
100
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
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