CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETER
OFF STATE SPECIFICATIONS
T
A
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
I
D
= 250µA, V
GS
= 0V (Figure 12)
V
DS
= 25V, V
GS
= 0V
V
DS
= 25V, V
GS
= 0V, T
C
= 150
o
C
30
-
-
-
-
-
-
-
-
1
250
±100
V
µA
µA
nA
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
I
GSS
V
GS
=
±16V
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250µA (Figure 11)
I
D
= 75A, V
GS
= 10V (Figure 9, 10)
I
D
= 44A, V
GS
= 5V (Figure 9)
I
D
= 41A, V
GS
= 4.5V (Figure 9)
1
-
-
-
-
0.0085
0.013
0.015
3
0.011
0.016
0.018
V
Ω
Ω
Ω
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SWITCHING SPECIFICATIONS
(VGS = 4.5V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 15V, I
D
≅
41A,
R
L
= 0.366Ω, V
GS
=
4.5V,
R
GS
= 6.2Ω
(Figures 15, 21, 22)
-
-
-
-
-
-
-
17
105
33
42
-
185
-
-
-
-
113
ns
ns
ns
ns
ns
ns
R
θJC
R
θJA
(Figure 3)
TO-220, TO-262 and TO-263
-
-
-
-
1.03
62
o
C/W
o
C/W
6-131
HUF76132P3, HUF76132S3S
Electrical Specifications
PARAMETER
SWITCHING SPECIFICATIONS
(VGS = 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
-
-
1650
850
200
-
-
-
pF
pF
pF
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V, I
D
≅
44A,
R
L
= 0.341Ω
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
-
-
-
-
-
44
25
1.8
4.80
13.50
52
30
2.2
-
-
nC
nC
nC
nC
nC
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 15V, I
D
≅
75A,
R
L
= 0.20, V
GS
=
10V,
R
GS
= 6.8Ω
(Figures 16, 21, 22)
-
-
-
-
-
-
-
11
37
65
42
-
72
-
-
-
-
160
ns
ns
ns
ns
ns
ns
T
A
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
V
SD
t
rr
Q
RR
I
SD
= 44A
I
SD
= 44A, dI
SD
/dt = 100A/µs
I
SD
= 44A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
-
TYP
-
-
-
MAX
1.25
71
104
UNITS
V
ns
nC
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
Unless Otherwise Specified
80
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
60
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
40
V
GS
= 4.5V
20
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
6-132
HUF76132P3, HUF76132S3S
Typical Performance Curves
2
1
THERMAL IMPEDANCE
Z
θ
JC
, NORMALIZED
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
10
-2
10
-3
10
-1
t, RECTANGULAR PULSE DURATION (s)
10
0
10
1
Unless Otherwise Specified
(Continued)
0.01
10
-5
SINGLE PULSE
10
-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
2000
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
I
1000
I
DM
, PEAK CURRENT (A)
=
I
25
150 - T
C
125
V
GS
= 5V
100
50
10
-5
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
FIGURE 4. PEAK CURRENT CAPABILITY
1000
500
I
AS
, AVALANCHE CURRENT (A)
T
J
= MAX RATED
T
C
= 25
o
C
I
D
, DRAIN CURRENT (A)
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
100
100µs
100
STARTING T
J
= 25
o
C
1ms
10
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1
STARTING T
J
= 150
o
C
BV
DSS MAX
= 30V
100
10
0.01
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
10
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
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