HUF76107D3, HUF76107D3S
Data Sheet
January 2003
20A, 30V, 0.052 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power
MOSFETs are manufactured using
the innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is
capable of withstanding high energy in the avalanche mode
and the diode exhibits very low reverse recovery time and
stored charge. It was designed for use in applications
where power efficiency is important, such as switching
regulators, switching converters, motor drivers, relay
drivers, low voltage bus switches, and power management
in portable and battery operated products.
Formerly developmental type TA76107.
Features
• Logic Level Gate Drive
• 20A, 30V
• Ultra Low On-Resistance, r
DS(ON)
= 0.052Ω
• Temperature Compensating PSPICE
®
Model
• Temperature Compensating SABER
©
Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
HUF76107D3
HUF76107D3S
PACKAGE
TO-251AA
TO-252AA
BRAND
76107D
76107D
Symbol
D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF76107D3ST.
G
S
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
©2003 Fairchild Semiconductor Corporation
HUF76107D3, HUF76107D3S Rev. B1
HUF76107D3, HUF76107D3S
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Continuous (T
C
= 100
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Continuous (T
C
= 100
o
C, V
GS
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
30
30
±20
20
10.5
10
Figure 4
Figure 6
35
0.30
-55 to 150
300
260
W
W/
o
C
o
C
o
C
o
C
V
V
V
A
A
A
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
T
A
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Electrical Specifications
PARAMETER
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
I
D
= 250µA, V
GS
= 0V (Figure 12)
V
DS
= 25V, V
GS
= 0V
V
DS
= 25V, V
GS
= 0V, T
C
= 150
o
C
30
-
-
-
-
-
-
-
-
1
250
±100
V
µA
µA
nA
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
I
GSS
V
GS
=
±20V
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250µA (Figure 11)
I
D
= 20A, V
GS
= 10V (Figure 9, 10)
I
D
= 10.5A, V
GS
= 5V (Figure 9)
I
D
= 10A, V
GS
= 4.5V (Figure 9)
1
-
-
-
-
0.042
0.058
0.065
3
0.052
0.080
0.085
V
Ω
Ω
Ω
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 15V, I
D
≅
10A, R
L
= 1.50Ω,
V
GS
=
4.5V, R
GS
= 33Ω
(Figure 15)
-
-
-
-
-
-
-
14
66
16
22
-
120
-
-
-
-
57
ns
ns
ns
ns
ns
ns
R
θJC
R
θJA
(Figure 3)
TO-251, TO-252
-
-
-
-
3.3
100
o
C/W
o
C/W
©2003 Fairchild Semiconductor Corporation
HUF76107D3, HUF76107D3S Rev. B1
HUF76107D3, HUF76107D3S
Electrical Specifications
PARAMETER
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 13)
-
-
-
315
170
30
-
-
-
pF
pF
pF
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V,I
D
≅
10.5A,
R
L
= 1.43Ω
I
g(REF)
= 1.0mA
(Figure 14)
-
-
-
-
-
8.6
4.7
0.35
1.00
2.40
10.3
5.7
0.42
-
-
nC
nC
nC
nC
nC
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 15V, I
D
≅
20A, R
L
=0.75Ω,
V
GS
=
10V, R
GS
= 33Ω
(Figures 16)
-
-
-
-
-
-
-
18
30
62
20
-
75
-
-
-
-
125
ns
ns
ns
ns
ns
ns
T
A
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
V
SD
t
rr
Q
RR
TEST CONDITIONS
I
SD
= 10.5A
I
SD
= 10.5A, dI
SD
/dt = 100A/µs
I
SD
= 10.5A, dI
SD
/dt = 100A/µs
MIN
-
-
-
TYP
-
-
-
MAX
1.25
39
49
UNITS
V
ns
nC
Typical Performance Curves
Unless otherwise specified
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
25
20
V
GS
= 10V
15
V
GS
= 4.5V
10
5
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
©2003 Fairchild Semiconductor Corporation
HUF76107D3, HUF76107D3S Rev. B1
HUF76107D3, HUF76107D3S
Typical Performance Curves
Unless otherwise specified
(Continued)
2
1
THERMAL IMPEDANCE
Z
θ
JC
, NORMALIZED
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
SINGLE PULSE
0.01
10
-5
10
-4
10
-2
10
-3
10
-1
t, RECTANGULAR PULSE DURATION (s)
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
10
0
10
1
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
500
T
C
= 25
o
C
I
DM
, PEAK CURRENT (A)
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
100
V
GS
= 10V
I
=
I
25
150 - T
C
125
V
GS
= 5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10
-5
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
FIGURE 4. PEAK CURRENT CAPABILITY
200
I
AS
, AVALANCHE CURRENT (A)
T
J
= MAX RATED
T
C
= 25
o
C
100
200
100
I
D
, DRAIN CURRENT (A)
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
100µs
10
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1
1
10
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
V
DSS(MAX)
= 30V
10ms
100
1
0.001
0.01
1
0.1
t
AV
, TIME IN AVALANCHE (ms)
10
100
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
©2003 Fairchild Semiconductor Corporation
HUF76107D3, HUF76107D3S Rev. B1
HUF76107D3, HUF76107D3S
Typical Performance Curves
Unless otherwise specified
(Continued)
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
25 V
DD
= 15V
I
D,
DRAIN CURRENT (A)
20
15
-55
o
C
150
o
C
25
25
o
C
I
D
, DRAIN CURRENT (A)
20
15
V
GS
= 4V
10
V
GS
= 3.5V
5
0
0
1
3
5
2
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
6
V
GS
= 3V
0
1
2
3
4
5
6
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
V
GS
= 10V
V
GS
= 5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 4.5V
10
5
0
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
90
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (mΩ)
80
70
60
50
40
30
2
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
10
I
D
= 5A
I
D
= 12A
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
I
D
= 20A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.00
1.75
1.50
1.25
1.00
0.75
0.50
-60
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 20A
0
60
120
180
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
1.1
NORMALIZED GATE
THRESHOLD VOLTAGE
1.0
0.9
0.8
0.7
0.6
-60
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
V
GS
= V
DS
, I
D
= 250µA
1.15
I
D
= 250µA
1.10
1.05
1.00
0.95
0
60
120
T
J
, JUNCTION TEMPERATURE (
o
C)
180
0.90
-60
0
60
120
T
J
, JUNCTION TEMPERATURE (
o
C)
180
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
©2003 Fairchild Semiconductor Corporation
HUF76107D3, HUF76107D3S Rev. B1
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