HUF76009P3, HUF76009D3S
TM
Data Sheet
April 2000
File Number
4861.1
20A, 20V, 0.027 Ohm, N-Channel, Logic
Level Power MOSFETs
THE HUF76009 is an application-specific MOSFET
optimized for switching when used as the upper switch in
synchronous buck applications. The low gate charge and low
input capacitance results in lower driver and lower switching
losses thereby increasing the overall system efficiency.
Features
• 20A, 20V
- r
DS(ON)
= 0.027Ω,
V
GS
=
10V
- r
DS(ON)
= 0.039Ω,
V
GS
=
5V
• PWM optimized for synchronous buck applications
• Fast Switching
Symbol
D
G
• Low Gate Charge
- Q
g
Total 11nC (Typ)
S
Packaging
HUF76009D3S
JEDEC TODD2AA
DRAIN (FLANGE)
HUFD76009P3
JEDEC TO-220AB
SOURCE
DRAIN
GATE
• Low Capacitance
- C
ISS
470pF (Typ)
- C
RSS
50pF (Typ)
Ordering Information
PART NUMBER
HUF76009P3
PACKAGE
TO-220AB
TO-252AA
BRAND
76009P
76009D
GATE
SOURCE
HUF76009D3S
DRAIN
(FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the HUF76009D3S in tape and reel, e.g., HUF76009D3ST.
Absolute Maximum Ratings
SYMBOL
V
DSS
V
DGR
V
GS
I
D
I
D
I
DM
P
D
T
J
, T
STG
T
L
T
pkg
R
θJC
R
θJA
NOTE:
1. T
J
= 25
o
C to 125
o
C.
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
HUF76009P3,
HUF76009D3S
20
20
±16
20
16
Figure 4
41
0.33
-55 to 150
300
260
3.04
62
100
UNITS
V
V
V
A
A
A
W
W/
o
C
o
C
o
C
o
C
o
C/W
o
C/W
o
C/W
Drain to Source Voltage (Note 1)
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1)
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2)
Continuous (T
C
= 100
o
C, V
GS
= 5V)
Pulsed Drain Current
Power Dissipation
Derate Above 25
o
C
Operating and Storage Temperature
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
Thermal Resistance Junction to Case, TO-220, TO-252
Thermal Resistance Junction to Ambient TO-220
Thermal Resistance Junction to Ambient TO-252
THERMAL SPECIFICATIONS
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Corporation.
|
Copyright
©
Intersil Corporation 2000
UltraFET® is a registered trademark of Intersil Corporation.
HUF76009P3, HUF76009D3S
Electrical Specifications
PARAMETER
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
I
D
= 250µA, V
GS
= 0V (Figure 11)
V
DS
= 20V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
C
= 150
o
C
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250µA (Figure 10)
I
D
= 20A, V
GS
= 10V (Figures 8, 9)
I
D
= 16A, V
GS
= 5V (Figure 8)
SWITCHING SPECIFICATIONS
(V
GS
= 5V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 10V, I
D
= 16A
V
GS
=
5V, R
GS
= 27Ω
(Figures 14, 18, 19)
-
-
-
-
-
-
-
9
115
19
34
-
186
-
-
-
-
80
ns
ns
ns
ns
ns
ns
1
-
-
-
0.022
0.032
3
0.027
0.039
V
Ω
Ω
I
GSS
V
GS
=
±16V
20
-
-
-
-
-
-
-
-
1
250
±100
V
µA
µA
nA
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 20V, V
GS
= 0V,
f = 1MHz
(Figure 12)
-
-
-
470
350
50
-
-
-
pF
pF
pF
Q
g(TOT)
Q
g(TOT)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 10V,
I
D
= 16A,
I
g(REF)
= 1.0mA
(Figures 13, 16, 17)
-
-
-
-
-
10.7
5.7
0.5
1.7
2.2
13
6.9
0.6
-
-
nC
nC
nC
nC
nC
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 10V, I
D
= 20A
V
GS
=
10V,
R
GS
= 27Ω
(Figures 15, 18, 19)
-
-
-
-
-
-
-
5.3
95
37
33
-
150
-
-
-
-
105
ns
ns
ns
ns
ns
ns
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
SYMBOL
V
SD
I
SD
= 20A
I
SD
= 10A
Reverse Recovery Time
Reverse Recovered Charge
t
rr
Q
RR
I
SD
= 16A, dI
SD
/dt = 100A/µs
I
SD
= 16A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
-
-
TYP
-
-
-
-
MAX
1.25
1.0
33
30
UNITS
V
V
ns
nC
2
HUF76009P3, HUF76009D3S
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
20
V
GS
= 10V
15
V
GS
= 5V
10
0.8
0.6
0.4
0.2
0
25
5
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1
THERMAL IMPEDANCE
Z
θJC
, NORMALIZED
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-3
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
10
0
10
1
SINGLE PULSE
0.01
10
-5
10
-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
500
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I
DM
, PEAK CURRENT (A)
100
V
GS
= 10V
I = I
25
150 - T
C
125
V
GS
= 5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10
-5
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
FIGURE 4. PEAK CURRENT CAPABILITY
3
HUF76009P3, HUF76009D3S
Typical Performance Curves
200
100
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
30
100µs
(Continued)
40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
20
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
SINGLE PULSE
T
J
= MAX RATED T
C
= 25
o
C
1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
50
1ms
10
T
J
= 25
o
C
0
2
10ms
T
J
= 150
o
C
T
J
= -55
o
C
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. TRANSFER CHARACTERISTICS
40
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
30
V
GS
= 5V
V
GS
= 4.5V
T
C
= 25
o
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
20
V
GS
= 4V
10
V
GS
= 3.5V
V
GS
= 3V
0
0
1
2
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (mΩ)
60
I
D
= 16A
50
I
D
= 5A
40
I
D
= 10A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
30
20
10
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.6
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
NORMALIZED GATE
THRESHOLD VOLTAGE
1.4
1.2
V
GS
= V
DS
, I
D
= 250µA
1.0
1.2
1.0
0.8
0.8
V
GS
= 10V, I
D
= 20A
0.6
-80
-40
0
40
80
120
160
0.6
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
4
HUF76009P3, HUF76009D3S
Typical Performance Curves
1.2
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
I
D
= 250µA
1000
1.1
C, CAPACITANCE (pF)
C
ISS
=
C
GS
+ C
GD
(Continued)
2000
C
OSS
≅
C
DS
+ C
GD
1.0
C
RSS
=
C
GD
100
0.9
-80
V
GS
= 0V, f = 1MHz
-40
0
40
80
120
160
50
0.1
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
20
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DD
= 10V
8
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
150
V
GS
= 5V, V
DD
= 10V, I
D
= 16A
125
SWITCHING TIME (ns)
t
r
100
75
50
25
12
t
d(ON)
0
0
10
20
30
40
50
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
t
f
t
d(OFF)
6
4
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 16A
I
D
= 10A
I
D
= 5A
0
3
6
Q
g
, GATE CHARGE (nC)
9
2
0
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 14. SWITCHING TIME vs GATE RESISTANCE
100
t
r
SWITCHING TIME (ns)
80
V
GS
= 10V, V
DD
= 10V, I
D
= 20A
60
t
d(OFF)
40
t
f
20
t
d(ON)
0
0
10
20
30
40
50
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
5
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