HUF75842P3, HUF75842S3S
Data Sheet
December 2001
43A, 150V, 0.042 Ohm, N-Channel,
UltraFET® Power MOSFET
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
JEDEC TO-263AB
Features
DRAIN
(FLANGE)
• Ultra Low On-Resistance
- r
DS(ON)
= 0.042Ω,
V
GS
=
10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
HUF75842P3
HUF75842S3S
Symbol
D
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
TO-220AB
TO-263AB
BRAND
75842P
75842S
HUF75842P3
HUF75842S3S
G
S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF75842S3ST.
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HUF75842P3
UNITS
V
V
V
A
A
150
150
±20
43
30
Figure 4
Figures 6, 14, 15
230
1.53
-55 to 175
300
260
W
W/
o
C
o
C
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF75842P3, HUF75842S3S Rev. B
HUF75842P3, HUF75842S3SS
Electrical Specifications
PARAMETER
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
I
D
= 250µA, V
GS
= 0V (Figure 11)
V
DS
= 140V, V
GS
= 0V
V
DS
= 135V, V
GS
= 0V, T
C
= 150
o
C
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
R
θJC
R
θJA
TO-220, TO-263
-
-
-
-
0.65
62
o
C/W
o
C/W
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
150
-
-
-
-
-
-
-
-
1
250
±100
V
µA
µA
nA
I
GSS
V
GS
=
±20V
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250µA (Figure 10)
I
D
= 43A, V
GS
= 10V (Figure 9)
2
-
-
0.035
4
0.042
V
Ω
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain "Miller" Charge
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
-
-
-
2730
660
230
-
-
-
pF
pF
pF
Q
g(TOT)
Q
g(10)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 20V
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 75V,
I
D
= 43A,
I
g(REF)
= 1.0mA
(Figures 13, 16, 17)
-
-
-
-
-
144
77
5.6
12
30
175
90
6.7
-
-
nC
nC
nC
nC
nC
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 75V, I
D
= 43A
V
GS
=
10V,
R
GS
= 3.9Ω
(Figures 18, 19)
-
-
-
-
-
-
-
13
53
47
34
-
100
-
-
-
-
120
ns
ns
ns
ns
ns
ns
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
SYMBOL
V
SD
I
SD
= 43A
I
SD
= 22A
Reverse Recovery Time
Reverse Recovered Charge
t
rr
Q
RR
I
SD
= 43A, dI
SD
/dt = 100A/µs
I
SD
= 43A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
-
-
TYP
-
-
-
-
MAX
1.25
1.00
190
1.08
UNITS
V
V
ns
µC
©2001 Fairchild Semiconductor Corporation
HUF75842P3, HUF75842S3S Rev. B
HUF75842P3, HUF75842S3S
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
40
V
GS
= 10V
30
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
50
20
10
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
175
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1
THERMAL IMPEDANCE
Z
θJC
, NORMALIZED
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
SINGLE PULSE
0.01
10
-5
10
-4
10
-3
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
10
0
10
1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
600
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
100
V
GS
= 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
30
10
-5
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
I
DM
, PEAK CURRENT (A)
FIGURE 4. PEAK CURRENT CAPABILITY
©2001 Fairchild Semiconductor Corporation
HUF75842P3, HUF75842S3S Rev. B
HUF75842P3, HUF75842S3S
Typical Performance Curves
300
I
AS
, AVALANCHE CURRENT (A)
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
(Continued)
300
I
D
, DRAIN CURRENT (A)
100
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
100
STARTING T
J
= 25
o
C
100µs
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1
1
10
100
300
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1ms
10ms
STARTING T
J
= 150
o
C
10
0.001
0.01
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
60
80
V
GS
= 10V
V
GS
= 6V
60
V
GS
=5V
I
D,
DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
40
T
J
= 175
o
C
20
T
J
= -55
o
C
T
J
= 25
o
C
0
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
6
40
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
0
1
2
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
0
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
3.0
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
NORMALIZED GATE
THRESHOLD VOLTAGE
1.2
V
GS
= V
DS
, I
D
= 250µA
2.0
1.5
1.0
0.5
V
GS
= 10V, I
D
= 43A
0
-80
-40
160
0
40
80
120
T
J
, JUNCTION TEMPERATURE (
o
C)
200
1.0
0.8
0.6
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HUF75842P3, HUF75842S3S Rev. B
HUF75842P3, HUF75842S3S
Typical Performance Curves
1.2
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
I
D
= 250µA
(Continued)
7000
V
GS
= 0V, f = 1MHz
C, CAPACITANCE (pF)
1.1
C
ISS
=
C
GS
+ C
GD
1000
C
OSS
≅
C
DS
+ C
GD
1.0
C
RSS
=
C
GD
100
0.9
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
50
0.1
1.0
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DD
= 75V
8
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
6
4
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 43A
I
D
= 22A
0
20
40
60
Q
g
, GATE CHARGE (nC)
80
2
0
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
©2001 Fairchild Semiconductor Corporation
HUF75842P3, HUF75842S3S Rev. B
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