CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
A
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(10)
Q
g(TH)
Qgs
Qgd
C
ISS
C
OSS
C
RSS
R
θJA
Pad Area = 0.171 in
2
(see note 2)
Pad Area = 0.068 in
2
Pad Area = 0.026 in
2
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
V
GS
= 0V to 20V
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 30V,
I
D
≅
2.6A,
R
L
= 11.5Ω
I
g(REF)
= 1.0mA
(Figure 13)
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V (Figure 11)
V
GS
= V
DS
, I
D
= 250µA (Figure 10)
V
DS
= 50V, V
GS
= 0V
V
DS
= 45V, V
GS
= 0V, T
A
= 150
o
C
V
GS
=
±20V
I
D
= 2.6A, V
GS
= 10V) (Figure 9)
V
DD
= 30V, I
D
≅
2.6A,
R
L
= 11.5Ω, V
GS
=
10V,
R
GS
= 25Ω
MIN
55
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
0.070
-
5
30
35
25
-
14
8.3
0.6
1.00
4.00
250
115
30
-
-
-
MAX
-
4
1
250
100
0.090
55
-
-
-
-
90
17
10
0.8
-
-
-
-
-
110
128
147
UNITS
V
V
µA
µA
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
nC
pF
pF
pF
o
C/W
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Ambient
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
NOTE:
2. 110
o
C/W measured using FR-4 board with 0.171in
2
footprint for 1000s.
SYMBOL
V
SD
t
rr
Q
RR
TEST CONDITIONS
I
SD
= 2.6A
I
SD
= 2.6A, dI
SD
/dt = 100A/µs
I
SD
= 2.6A, dI
SD
/dt = 100A/µs
MIN
-
-
-
TYP
-
-
-
MAX
1.25
40
50
UNITS
V
ns
nC
2
HUF75307T3ST
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
3.0
R
θ
JA
= 110
o
C/W
2.5
2.0
1.5
1.0
0.5
0
25
0.8
0.6
0.4
0.2
0
0
50
100
150
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
T
A
, AMBIENT TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
10
THERMAL IMPEDANCE
Z
θ
JA
, NORMALIZED
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
R
θ
JA
= 110
o
C/W
0.1
P
DM
t
1
SINGLE PULSE
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
10
-2
10
-1
10
0
t, RECTANGULAR PULSE DURATION (s)
10
1
10
2
10
3
0.01
0.001
10
-5
10
-4
10
-3
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
100
T
J
= MAX RATED
T
A
= 25
o
C
R
θ
JA
= 110
o
C/W
100µs
1ms
1
10ms
30
T
A
= 25
o
C FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I
I
D
, DRAIN CURRENT (A)
10
I
DM
, PEAK CURRENT (A)
10
=
I
25
150 - T
A
125
R
θ
JA
= 110
o
C/W
0.1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1
0.01
V
DSS
(
MAX
) = 55V
200
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
10
-3
10
-2
10
-1
10
0
10
1
t, PULSE WIDTH (s)
10
2
10
3
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
3
HUF75307T3ST
Typical Performance Curves
20
I
AS
, AVALANCHE CURRENT (A)
(Continued)
10
I
D
, DRAIN CURRENT (A)
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
25
V
GS
= 20V
V
GS
= 10V
V
GS
= 7V
V
GS
= 6V
20
STARTING T
J
= 25
o
C
15
10
STARTING T
J
= 150
o
C
V
GS
= 5V
5
1
0.01
0
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
A
= 25
o
C
0
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
