SUP/SUB75N06-08
N-Channel Enhancement-Mode Transistors
Product Summary
V
(BR)DSS
(V)
60
TO-220AB
TO-263
G
DRAIN connected to TAB
G D S
Top View
SUB75N06-08
S
N-Channel MOSFET
r
DS(on)
(W)
0.008
I
D
(A)
75
a
D
G D S
Top View
SUP75N06-08
Absolute Maximum Ratings (
T
C
= 25_C Unless Otherwise Noted
)
Parameter
Gate-Source Voltage
Continuous Drain Current
(T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Power Dissipation
L = 0.1 mH
T
C
= 25_C (TO-220AB and TO-263)
T
A
= 25_C (TO-263)
d
T
C
= 25_C
T
C
= 125_C
Symbol
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
"20
75
a
55
240
60
280
187
c
3.7
–55 to 175
Unit
V
A
mJ
W
_C
Operating Junction and Storage Temperature Range
Thermal Resistance Ratings
Parameter
PCB Mount (TO-263)
d
Junction-to-Ambient
Junction to Ambient
Free Air (TO-220AB)
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document # 70283.
A SPICE Model data sheet is available for this product (FaxBack document #70527).
R
thJA
R
thJC
Symbol
Limit
40
62.5
0.8
Unit
_C/W
Siliconix
S-47969—Rev. D, 08-Jul-96
1
SUP/SUB75N06-08
Specifications (T
J
= 25_C Unless Otherwise Noted)
Parameter
Static
Drain Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 60 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V
,
V
GS
= 0 V, T
J
= 125_C
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175_C
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 125_C
V
GS
= 10 V, I
D
= 30 A, T
J
= 175_C
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 30 A
30
120
0.007
0.008
0.012
0.016
S
W
60
2.0
3.0
4.0
"100
1
50
150
A
mA
nA
V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V, R
L
= 0.47
W
,
I
D
^
75 A, V
GEN
= 10 V, R
G
= 2.5
W
A
V
25
V
DS
= 30 V
,
V
GS
= 10 V, I
D
= 75 A
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
4800
910
270
85
28
26
20
95
65
20
40
200
120
60
ns
120
nC
pF
Source Drain Diode Ratings and Characteristics (T
C
= 25_C)
a
Continuous Current
Pulsed Current
Forward Voltage
b
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 75 A, di/dt = 100 A/ms
I
F
= 75 A , V
GS
= 0 V
1.0
67
6
0.2
75
240
1.3
120
8
0.48
V
ns
A
mC
A
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test: pulse width
v
300
msec,
duty cycle
v
2%.
c. Independent of operating temperature.
2
Siliconix
S-47969—Rev. D, 08-Jul-96
SUP/SUB75N06-08
Typical Characteristics (25_C Unless Otherwise Noted)
Output Characteristics
250
V
GS
= 10, 9, 8 V
200
I
D
– Drain Current (A)
I
D
– Drain Current (A)
6V
150
150
7V
200
Transfer Characteristics
100
100
5V
50
4V
0
0
2
4
6
8
10
V
DS
– Drain-to-Source Voltage (V)
50
T
C
= 125_C
25_C
0
0
2
4
–55_C
6
8
10
V
GS
– Gate-to-Source Voltage (V)
Transconductance
120
100
g
fs
– Transconductance (S)
80
60
40
20
0
0
20
40
60
80
100
V
GS
– Gate-to-Source Voltage (V)
T
C
= –55_C
25_C
125_C
r
DS(on)
– On-Resistance (
W
)
0.008
0.010
On-Resistance vs. Drain Current
V
GS
= 10 V
0.006
V
GS
= 20 V
0.004
0.002
0
0
20
40
60
80
100
120
I
D
– Drain Current (A)
7000
6000
C – Capacitance (pF)
5000
4000
3000
2000
1000
0
0
10
20
C
rss
Capacitance
V
GS
– Gate-to-Source Voltage (V)
20
V
DS
= 30 V
I
D
= 75 A
Gate Charge
16
C
iss
12
8
C
oss
4
0
30
40
50
60
0
25
50
75
100
125
150
175
V
DS
– Drain-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
Siliconix
S-47969—Rev. D, 08-Jul-96
3
SUP/SUB75N06-08
Typical Characteristics (25_C Unless Otherwise Noted)
2.5
On-Resistance vs. Junction Temperature
100
V
GS
= 10 V
I
D
= 30 A
I
S
– Source Current (A)
Source-Drain Diode Forward Voltage
r
DS(on)
– On-Resistance (
W
)
(Normalized)
2.0
T
J
= 150_C
T
J
= 25_C
10
1.5
1.0
0.5
0
–50 –25
1
0
25
50
75
100 125 150 175
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
Thermal Ratings
100
Maximum Avalanche and Drain Current
vs. Case Temperature
500
Safe Operating Area
80
I
D
– Drain Current (A)
I
D
– Drain Current (A)
100
Limited
by r
DS(on)
10 ms
60
100 ms
40
1 ms
10
T
C
= 25_C
Single Pulse
1
20
10 ms
100 ms
dc
100
0
0
25
50
75
100
125
150
175
T
C
– Case Temperature (_C)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–5
10
–4
10
–3
10
–2
0.1
1
10
V
DS
– Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
10
–1
1
3
Square Wave Pulse Duration (sec)
4
Siliconix
S-47969—Rev. D, 08-Jul-96
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