SMOS44N50, SMOS48N50
Power MOSFETs
(T
J
=25
o
C,
unless otherwise specified)
Symbol
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
Test Conditions
V
GS
=0V; I
D
=1 mA
V
DS
=V
GS
; I
D
=8 mA
V
GS
=±20V
DC
; V
DS
=0
V
DS
=0.8V
DSS
; T
J
=25
o
C
V
GS
=0V; T
J
=125
o
C
V
GS
=10V; I
D
=0.5I
D25
44N50
48N50
Pulse test, t 300us, duty cycle d
Characteristic Values
min.
typ.
max.
500
2
4
±200
400
2
0.12
0.10
2%
(T
J
=25
o
C,
unless otherwise specified)
Symbol
g
ts
C
ies
C
oes
C
res
Q
g(on)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
thJC
R
thCK
Test Conditions
V
DS
=10V; I
D
=0.5I
D25
; pulse test
V
GS
=0V; V
DS
=25V; f=1MHz
Characteristic Values
min.
typ.
max.
22
42
8400
900
280
270
60
135
30
60
100
30
0.24
0.05
Unit
S
pF
Unit
V
V
nA
uA
mA
V
GS
=10V; V
DS
=0.5V
DSS'
; I
D
=0.5I
D25
nC
ns
ns
ns
ns
K/W
K/W
V
GS
=10V; V
DS
=0.5V
DSS
; I
D
=0.5I
D25
R
G
=1 (External)