Datasheet> 器件分类 > 存储> 存储> HYMR11696-750

文档预览

HYMR11696-750: 产品描述Rambus DRAM Module, 96MX16, CMOS, RIMM-184; 产品类别存储存储; 文件大小113KB，共10页; 制造商SK Hynix(海力士); 官网地址http://www.hynix.com/eng/

下载文档详细参数选型对比全文预览

HYMR11696-750概述

Rambus DRAM Module, 96MX16, CMOS, RIMM-184

HYMR11696-750规格参数

参数名称	属性值
零件包装代码	DMA
包装说明	,
针数	84
Reach Compliance Code	unknown
ECCN代码	EAR99
访问模式	BLOCK ORIENTED PROTOCOL
JESD-30 代码	R-XDMA-N184
内存密度	1610612736 bit
内存集成电路类型	RAMBUS DRAM MODULE
内存宽度	16
功能数量	1
端口数量	1
端子数量	84
字数	100663296 words
字数代码	96000000
工作模式	SYNCHRONOUS
组织	96MX16
封装主体材料	UNSPECIFIED
封装形状	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY
认证状态	Not Qualified
最大供电电压 (Vsup)	2.63 V
最小供电电压 (Vsup)	2.37 V
标称供电电压 (Vsup)	2.5 V
表面贴装	NO
技术	CMOS
端子形式	NO LEAD
端子位置	DUAL
Base Number Matches	1

文档预览

下载PDF文档

全文
预览

Direct Rambus

™

RIMM

™

Module

192 MBytes (96M x 16/18) based on 8Mx16/18

Overview

The Direct Rambus™ RIMM™ module is a general purpose

high-performance memory subsystem suitable for use in a

broad range of applications including computer memory,

personal computers, workstations, and other applications

where high bandwidth and low latency are required.

The 192MB Direct Rambus RIMM module consists of

twelve 128M Direct Rambus DRAM (Direct RDRAM™ )

devices. These are extremely high-speed CMOS DRAMs

organized as 8M words by 16 or 18 bits. The use of Rambus

Signaling Level (RSL) technology permits 600MHz /

711MHz / 800MHz transfer rates while using conventional

system and board design technologies. Direct RDRAM

devices are capable of sustained data transfers at 1.25 ns per

two bytes (10ns per sixteen bytes).

The architecture of the Direct RDRAM allows the highest

sustained bandwidth for multiple, simultaneous randomly

addressed memory transactions. The separate control and

data buses with independent row and column control yield

over 95% bus efficiency. The Direct RDRAM's thirty-two

banks support up to four simultaneous transactions.

Key Timing Parameters/Part Numbers

The following table lists the frequency and latency bins

available from RIMM modules. An optional -LP designator

is used to indicate low power modules.

Organization

96M x 16

96M x 18

I/O Freq. t

rac

(Row Access

MHz

Time) ns

600

711

800

600

711

800

Part Number

HYMR11696-653

HYMR11696-750

HYMR11696-745

HYMR11696-845

HYMR11696-840

HYMR11896-653

HYMR11896-750

HYMR11896-745

HYMR11896-845

HYMR11896-840

Form Factor

The Direct Rambus RIMM modules are offered in a 184-pin

1mm pin pitch form factor suitable for desktop and other

system applications.

Features

184-pin 1mm pin spacing

Card Size: 133.35mm x 31.75mm x 1.27mm

(5.25” x 1.25” x 0.050”)

192MB Direct RDRAM storage

Each RDRAM has 32banks, for 512 banks total on

module

Gold plated contacts

RDRAMs use Chip Scale Package (CSP)

Serial Presence Detect support

Operates from a 2.5 volt supply (±5%)

Low power and powerdown self refresh modes

Separate Row and Column buses for higher efficiency

Rev. 0.0 /Feb. 99

HYMR11696-750相似产品对比

	HYMR11696-750	HYMR11696-745	HYMR11696-653	HYMR11696-840	HYMR11896-745	HYMR11896-750	HYMR11696-845	HYMR11896-653	HYMR11896-840	HYMR11896-845
描述	Rambus DRAM Module, 96MX16, CMOS, RIMM-184	Rambus DRAM Module, 96MX16, CMOS, RIMM-184	Rambus DRAM Module, 96MX16, 53ns, CMOS, RIMM-184	Rambus DRAM Module, 96MX16, 40ns, CMOS, RIMM-184	Rambus DRAM Module, 96MX18, CMOS, RIMM-184	Rambus DRAM Module, 96MX18, CMOS, RIMM-184	Rambus DRAM Module, 96MX16, 45ns, CMOS, RIMM-184	Rambus DRAM Module, 96MX18, CMOS, RIMM-184	Rambus DRAM Module, 96MX18, CMOS, RIMM-184	Rambus DRAM Module, 96MX18, CMOS, RIMM-184
零件包装代码	DMA	DMA	DMA	DMA	DMA	DMA	DMA	DMA	DMA	DMA
包装说明	,	,	DIMM, DIMM184,40	DIMM, DIMM184,40	,	,	DIMM, DIMM184,40	DIMM, DIMM184,40	DIMM, DIMM184,40	DIMM, DIMM184,40
针数	84	84	84	84	84	84	84	84	84	84
Reach Compliance Code	unknown	unknown	compliant	compliant	unknown	unknown	compliant	compliant	compliant	compli
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL
JESD-30 代码	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184
内存密度	1610612736 bit	1610612736 bit	1610612736 bit	1610612736 bit	1811939328 bit	1811939328 bit	1610612736 bit	1811939328 bit	1811939328 bit	1811939328 bi
内存集成电路类型	RAMBUS DRAM MODULE	RAMBUS DRAM MODULE	RAMBUS DRAM MODULE	RAMBUS DRAM MODULE	RAMBUS DRAM MODULE	RAMBUS DRAM MODULE	RAMBUS DRAM MODULE	RAMBUS DRAM MODULE	RAMBUS DRAM MODULE	RAMBUS DRAM MODULE
内存宽度	16	16	16	16	18	18	16	18	18	18
功能数量	1	1	1	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1	1	1	1
端子数量	84	84	84	84	84	84	84	84	84	84
字数	100663296 words	100663296 words	100663296 words	100663296 words	100663296 words	100663296 words	100663296 words	100663296 words	100663296 words	100663296 words
字数代码	96000000	96000000	96000000	96000000	96000000	96000000	96000000	96000000	96000000	96000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
组织	96MX16	96MX16	96MX16	96MX16	96MX18	96MX18	96MX16	96MX18	96MX18	96MX18
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大供电电压 (Vsup)	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V
最小供电电压 (Vsup)	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V
标称供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
最大时钟频率 (fCLK)	-	-	600 MHz	800 MHz	-	-	800 MHz	600 MHz	800 MHz	800 MHz
I/O 类型	-	-	COMMON	COMMON	-	-	COMMON	COMMON	COMMON	COMMON
输出特性	-	-	3-STATE	3-STATE	-	-	3-STATE	3-STATE	3-STATE	3-STATE
封装代码	-	-	DIMM	DIMM	-	-	DIMM	DIMM	DIMM	DIMM
封装等效代码	-	-	DIMM184,40	DIMM184,40	-	-	DIMM184,40	DIMM184,40	DIMM184,40	DIMM184,40
电源	-	-	1.8/2.5,2.5 V	1.8/2.5,2.5 V	-	-	1.8/2.5,2.5 V	1.8/2.5,2.5 V	1.8/2.5,2.5 V	1.8/2.5,2.5 V
端子节距	-	-	1 mm	1 mm	-	-	1 mm	1 mm	1 mm	1 mm
厂商名称	-	-	-	-	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)

HYMR11696-750

HYMR11696-750概述

HYMR11696-750规格参数

文档预览

HYMR11696-750相似产品对比

推荐资源