SemiWell
Semiconductor
SBP13009
High Voltage Fast-Switching NPN Power Transistor
Features
-
Very High Switching Speed (Typical 40ns@8.0A)
-
Minimum Lot-to-Lot hFE Variation
-
Low VCE(sat) (Typical 320mV@8.0A/1.6A)
-
Wide Reverse Bias S.O.A
Symbol
○
2.Collector
1.Base
○
○
3.Emitter
General Description
This device is designed for high voltage, high speed switching char-
acteristic required such as switching mode power supply.
TO-220
1
2
3
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
STG
T
J
Parameter
Collector-Emitter Voltage ( V
BE
= 0 )
Collector-Emitter Voltage ( I
B
= 0 )
Emitter-Base Voltage ( I
C
= 0 )
Collector Current
Collector Peak Current ( t
P
＜
10 ms
)
Base Current
Base Peak Current ( t
P
＜
10 ms
)
Total Dissipation at T
C
= 25 °C
Storage Temperature
Max. Operating Junction Temperature
Value
700
400
9.0
12
25
6.0
12
100
- 65 ~ 150
150
Units
V
V
V
A
A
A
A
W
°C
°C
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
1.25
40
Units
°C/W
°C/W
Oct, 2002. Rev. 2
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved
1/6
SBP13009
Electrical Characteristics
Symbol
I
CEV
V
CEO(sus)
( T
C
= 25 °C unless otherwise noted )
Parameter
Collector Cut-off Current
( V
BE
= - 1.5V )
Collector-Emitter Sustaining Voltage
( I
B
= 0 )
Condition
V
CE
= 700V
V
CE
= 700V
I
C
= 10 mA
I
C
= 5.0A
I
C
= 8.0A
I
C
= 12A
I
C
= 8.0A
I
B
= 1.0A
I
B
= 1.6A
I
B
= 3.0A
I
B
= 1.6A
T
C
= 100 °C
I
B
= 1.0A
I
B
= 1.6A
I
B
= 1.6A
T
C
= 100 °C
V
CE
= 5V
V
CE
= 5V
V
CC
= 125V
I
B2
= - 1.6A
T
C
= 100 °C
Min
-
Typ
-
Max
1.0
5.0
-
Units
mA
400
-
V
V
CE(sat)
Collector-Emitter Saturation Voltage
-
-
0.5
1.0
1.5
2.0
V
V
BE(sat)
Base-Emitter Saturation Voltage
I
C
= 5.0A
I
C
= 8.0A
I
C
= 8.0A
-
-
1.2
1.6
1.5
V
h
FE
DC Current Gain
Resistive Load
Storage Time
Fall Time
Inductive Load
Storage Time
Fall Time
Inductive Load
Storage Time
Fall Time
I
C
= 5.0A
I
C
= 8.0A
I
C
= 8.0A
I
B1
= 1.6A
T
P
= 25
㎲
V
CC
= 15V
I
B1
= 1.6A
L
C
= 0.2mH
V
CC
= 15V
I
B1
= 1.6A
L
C
= 0.2mH
10
6
-
30
30
t
s
t
f
-
1.5
0.16
3.0
0.4
㎲
t
s
t
f
I
C
= 8.0A
V
BE(off)
= 5V
V
clamp
= 300V
I
C
= 8.0A
V
BE(off)
= 5V
V
clamp
= 300V
T
C
= 100 °C
-
0.6
0.04
2.0
0.1
㎲
t
s
t
f
-
0.8
0.05
2.5
0.15
㎲
※
Notes :
Pulse Test : Pulse width
≤
300㎲, Duty cycle
≤
2%
2/6
SBP13009
Fig 1. Static Characteristics
18
16
14
I
B
= 2000mA
I
B
= 1600mA
I
B
= 1200mA
I
B
= 1000mA
10
8
6
4
2
0
I
B
= 200mA
I
B
= 800mA
I
B
= 600mA
I
B
= 400mA
45
40
35
o
Fig 2. DC Current Gain
I
C
, Collector Current [A]
12
h
FE
, DC Current Gain
T
J
= 125 C
30
25
20
15
※
Notes :
T
J
= 25 C
o
10
5
0
0.01
V
CE
= 5V
V
CE
= 1V
I
B
= 0mA
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
V
CE
, Collector-Emitter Voltage [V]
I
C
, Collector Current [A]
Fig 3. Collector-Emitter Saturation Voltage
1.4
10
Fig 4. Base-Emitter Saturation Voltage
V
CE
, Collector-Emitter Voltage [V]
V
BE
, Base-Emitter Voltage [V]
1.2
1.0
1
T
J
= 25 C
o
T
J
= 125 C
o
0.8
0.1
※
Note :
h
FE
= 5
0.6
T
J
= 125 C
0.4
※
Note :
h
FE
= 5
o
T
J
= 25 C
0.01
0.1
1
o
10
0.2
0.1
1
10
I
C
, Collector Current [A]
I
C
, Collector Current [A]
Fig 5. Resistive Load Fall Time
1000
Fig 6. Resistive Load Storage Time
10
※
Notes :
V
CC
= 125V
h
FE
= 5
I
B1
= - I
B2
t, Time [ns]
t, Time [us]
T
J
= 25 C
100
o
T
J
= 25 C
o
※
Notes :
V
CC
= 125V
h
FE
= 5
I
B1
= - I
B2
1
10
0
2
4
6
8
10
12
14
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
I
C
, Collector Current [A]
I
C
, Collector Current [A]
3/6
SBP13009
Fig 7. Safe Operation Areas
10
2
Fig 8. Reverse Biased Safe Operation
Areas
15
※
Notes :
T
C
≤
100 °C
Gain
≥
4
L
C
= 0.5 mH
12
I
C
, Collector Current [A]
10
µ
s
0
I
C
, Collector Current [A]
10
1
9
10
DC
100
µ
s
V
BE
(off)
6
-5V
-3V
-1.5V
10
-1
1ms
※
Single Pulse
3
10
-2
10
0
10
1
10
2
10
3
0
0
100
200
300
400
500
600
700
800
V
CE
, Collector-Emitter Clamp Voltage [V]
V
CE
, Collector-Emitter Clamp Voltage [V]
Fig 9. Power Derating Curve
125
Power Derating Factor (%)
100
75
50
25
0
0
50
100
150
o
200
T
C
, Case Temperature ( C)
4/6
SBP13009
Inductive Load Switching & RBSOA Test Circuit
L
C
I
B1
I
C
I
B
V
CE
D.U.T
R
BB
V
BE
(off)
V
Clamp
V
CC
Resistive Load Switching Test Circuit
R
C
I
B1
I
C
I
B
V
CE
D.U.T
R
BB
V
BE
(off)
V
CC
5/6
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